SCTW100N65G2AG - 650V 100A SiC Power MOSFET | STMicroelectronics
N.º de pieza: SCTW100N65G2AG ✗ Fin de vida| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $38.75 | $38,75 |
| 10 | $35.2 | $352,00 |
| 100 | $30.9 | $3.090,00 |
| 500 | $27.4 | $13.700,00 |
| 1.000 | $24.1 | $24.100,00 |
SCTW100N65G2AG Descripción general
A silicon carbide MOSFET is a wide-bandgap power transistor that switches high voltages and currents with substantially lower switching and conduction losses than a silicon MOSFET or IGBT of comparable rating. SiC technology sits in the power semiconductor hierarchy below IGBT and silicon MOSFET for high-voltage (>600 V) applications, offering higher switching frequency capability, lower switching losses, and better thermal conductivity. AEC-Q101 qualified variants like the SCTW100N65G2AG are specifically designed for harsh automotive environments such as traction inverters and on-board chargers.
Key differentiating specifications include 20 mΩ typical RDS(on) at 25 °C, very fast and robust intrinsic body diode, extremely low gate charge and input capacitance, and a 650 V repetitive breakdown voltage with 100 A continuous drain current. The HiP247 through-hole package supports 420 W power dissipation with a low junction-to-case thermal resistance optimized for forced-air or liquid-cooled heatsinks typical in EV power electronics.
The device's 2nd-generation SiC trench architecture minimizes RDS(on) per unit area and integrates a robust intrinsic body diode, eliminating the need for external anti-parallel diodes in many bridge-leg applications. Compared with silicon IGBTs of similar voltage class, the SiC MOSFET reduces switching losses by 50-70 % at the same frequency, allowing smaller magnetics and higher converter power density in traction and charging systems.
Typical applications include on-board chargers (OBC) for electric vehicles, EV traction inverters, DC-DC converters for xEV powertrains, photovoltaic (PV) string inverters, industrial servo drives, and high-frequency telecom power supplies. AEC-Q101 qualification makes it directly suitable for automotive environments per customer-required quality levels and PPAP documentation.
When designing around this part, gate-drive voltage must reach +18 V typical for the rated RDS(on), with a 0 V or negative turn-off recommended to ensure noise immunity at high dV/dt. A small gate-source resistor (typically 10 Ω) plus proper PCB layout minimize ringing and overshoot on the gate.
This page synthesizes SiC MOSFET comparison data with several ST family variants and competing SiC MOSFETs, parameter-locked PCB layout notes, and converter design considerations not consolidated in the manufacturer datasheet, all sourced from STMicroelectronics and authorized distributor listings as of 2026-10-20.
Alternativas directas para SCTW100N65G2AG — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
SCTWA100N65G2AG
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
SCTH100N65G2-7AG
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
SCTW120N65G2AG
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
SCTW70N65G2V-7AG
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
IMBG120R040M2H
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
C3M0075120K
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
SCTW100N65G2AG Valores máximos y características eléctricas
| Technology | Silicon Carbide (SiC) MOSFET, 2nd Generation |
| Channel Type | N-Channel |
| Drain-Source Voltage (VDS) | 650 V |
| Continuous Drain Current (ID) at Tc | 100 A |
| On-Resistance RDS(on) typ. at 25 °C | 20 mΩ |
| Total Power Dissipation (Ptot) at Tc | 420 W |
| Gate-Source Voltage (VGS) max | -10 V to +22 V (recommended drive +18 V) |
| Rango de temperatura de unión de funcionamiento | -55 °C to +200 °C (per package datasheet) |
| Encapsulado | HiP247 (through-hole, 3-lead) |
| Tipo de montaje | Through Hole |
| Automotive Qualification | AEC-Q101 qualified |
| Estado RoHS | Compliant (ECOPACK) |
| Intrinsic Body Diode | Yes, very fast and robust |
Configuración de pines de SCTW100N65G2AG
| Pin 1 | Gate — Gate terminal (drive input, +18 V typical recommended) |
| Pin 2 | Drain — Drain terminal (main current terminal, connected to high-voltage bus) |
| Pin 3 | Source — Source terminal (return, kelvin connection recommended at gate driver) |
Área de funcionamiento seguro - HiP247 SiC MOSFET
Aplicaciones típicas
SCTW100N65G2AG es adecuado para 7 aplicacións: EV On-Board Charger (OBC), EV Traction Inverter, xEV DC-DC Converter, Solar String Inverter, Industrial Servo / Variable-Frequency Drive, Telecom / Server Power Supply, Industrial Battery Charger / Energy Storage.
EV On-Board Charger (OBC)
The SCTW100N65G2AG's 650 V VDS rating and 100 A continuous drain current suit it for high-voltage stages of on-board chargers (typically 6.6 kW to 22 kW) operating from 400 V or 800 V EV bus rails. With RDS(on) of 20 mΩ at 25 °C, conduction loss stays low even at full load, and 2nd-gen SiC switching characteristics cut switching losses by 50-70 % versus silicon IGBT alternatives - improving OBC efficiency by 1-2 % and reducing thermal management cost. The AEC-Q101 qualification plus HiP247 through-hole package supports automotive-volume heatsink mounting under the hood or in the charging-cable enclosure.
Recomendado
EV Traction Inverter
The SCTW100N65G2AG is rated for the high-current, high-frequency half-bridge positions in 100-200 kW traction inverters driving electric-vehicle permanent-magnet or induction motors. Its 100 A continuous DC rating, 650 V VDS margin above 400 V bus operation, and 420 W dissipation capability map directly to the inverter's per-switch requirements, while the HiP247 package supports liquid-cooled cold-plate mounting. The very robust intrinsic body diode with low Qrr enables deadtime-optimized switching, reducing torque ripple and audible noise in motor drive applications.
Recomendado
xEV DC-DC Converter
The SCTW100N65G2AG serves as the primary switching device in 400 V to 12 V / 48 V high-voltage DC-DC converters used in mild-hybrid and full-electric vehicles. Its 650 V rating handles 400 V bus transients with margin, and the low gate charge supports switching frequencies of 100 kHz or higher - shrinking the size and cost of the converter's isolation transformer and output inductor. SiC switching loss reduction translates directly to higher converter efficiency (typically 96 %+), easing thermal budgets in cramped underbody enclosures.
Recomendado
Solar String Inverter
The SCTW100N65G2AG's 650 V breakdown voltage enables safe operation from 1500 V DC string open-circuit conditions when properly derated, and 100 A continuous rating supports 50-100 kW inverter power stages used in commercial and utility-scale PV plants. SiC switching loss reduction allows higher switching frequency, reducing LCL filter size and lowering system BOM cost. The HiP247 package accepts standard TO-247 heatsink mounts, simplifying mechanical integration into existing inverter production lines migrating from silicon IGBT to SiC MOSFET technology.
Recomendado
Industrial Servo / Variable-Frequency Drive
The SCTW100N65G2AG supports high-dynamic-response servo drives and industrial VFDs where switching frequency above the audible band and low switching losses reduce motor heating and acoustic emissions. With 100 A continuous rating, it fits drives up to approximately 30 kW at 480 V three-phase input. The robust intrinsic body diode simplifies the half-bridge layout and supports regenerative braking modes common in industrial servo applications; AEC-Q101 qualification indicates SiC technology reliability that exceeds typical industrial-grade silicon IGBT counterparts in the same position.
Recomendado
Telecom / Server Power Supply
The SCTW100N65G2AG fits high-efficiency 3-5 kW rectifier stages used in -48 V telecom and hyperscale-data-center power supplies where efficiency drives operating-cost reduction. Its 650 V rating supports universal AC input (85-265 V) PFC and LLC converter stages, while low Qg and Qrr reduce driver losses and improve light-load efficiency - critical for meeting 80 PLUS Titanium and ETSI EN 300 132-2 efficiency targets. The HiP247 package, while through-hole, is increasingly accepted in 3 kW+ server PSU designs that already use TO-247-package parts.
Recomendado
Industrial Battery Charger / Energy Storage
The SCTW100N65G2AG supports bidirectional DC-DC converter stages in industrial lithium-ion battery chargers and stationary energy-storage systems (ESS) where high efficiency and bidirectional current handling are essential. The very fast body diode intrinsically supports synchronous-rectifier-mode reverse-current flow without an additional anti-parallel diode, reducing BOM and conduction losses. AEC-Q101 qualification ensures long-term reliability under thermal cycling typical in battery-cabinet operating environments with daily charge/discharge profiles.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para SCTW100N65G2AG — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | SCTWA100N65G2AG | SCTH100N65G2-7AG | SCTW120N65G2AG | IMBG120R040M2H | C3M0075120K |
|---|---|---|---|---|---|---|
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics | Infineon | Wolfspeed |
| Package | HiP247 | HiP247 (same) | HiP247 (same) | HiP247 (same) | HiP247/TO-247-3 (footprint-compatible, verify pinout) | TO-247-3 (footprint-compatible, verify pinout) |
| Drain-Source Voltage VDS | 650 V | 650 V (same) | 650 V (same) | 650 V (same) | 1200 V (+85%) | 1200 V (+85%) |
| On-Resistance RDS(on) typ. at 25 °C | 20 mΩ | 20 mΩ (same) | 20 mΩ (same) | 16 mΩ (-20%) | 40 mΩ (+100%) | 75 mΩ (+275%) |
| Automotive Qualification | AEC-Q101 | Industrial grade (no AEC-Q101) | Industrial grade | AEC-Q101 | Industrial grade | Industrial grade |
| Technology | SiC MOSFET, 2nd Gen | SiC MOSFET, 2nd Gen (same) | SiC MOSFET, 2nd Gen (same) | SiC MOSFET, 2nd Gen (same) | SiC MOSFET, Gen 2 | SiC MOSFET, Gen 3 |
Diferenciadores clave
- Automotive-grade AEC-Q101 qualification in the same HiP247 footprint (frente a SCTWA100N65G2AG)
- Higher continuous drain current rating in same HiP247 footprint (frente a SCTW70N65G2V-7AG)
- Lower RDS(on) at 25 °C for higher-current variants (frente a SCTW120N65G2AG)
- Proven SiC 2nd-generation technology with robust body diode (frente a Infineon IMBG120R040M2H / Wolfspeed C3M0075120K)
Notas de diseño
Estimated: at ID = 100 A continuous and RDS(on) = 20 mΩ (nominal, ignoring RDS(on) temperature rise), conduction loss is approximately 200 W at 25 °C. The HiP247 package's junction-to-case thermal resistance is below 0.5 °C/W per ST datasheet, so for a 125 °C liquid cold plate the steady-state junction temperature rise above case is roughly 100 °C - well within SiC's 200 °C rating. Forced-air cooling requires a substantial heatsink (>1 °C/W) plus airflow >2 m/s; for sustained 100 A in traction drives, design for liquid cooling.
Use a kelvin source connection from pin 3 directly to the gate-driver return, NOT to the high-current source return path. Keep the gate-loop loop-area under 1 cm² to control ringing from the input capacitance (~10 nF class). Place a 10 Ω gate-source resistor directly at the gate pin plus an optional 10 Ω gate-drive series resistor to damp dV/dt-induced ringing above 50 V/ns; SiC MOSFETs' high dV/dt and dI/dt easily couple stray inductance into the gate.
Drive VGS to +18 V (not +12 V) to achieve the rated 20 mΩ RDS(on). Apply a 0 V to -3 V turn-off voltage to ensure robust noise immunity under high dV/dt - the absolute maximum VGS range is -10 V to +22 V per the datasheet. Use a gate driver with at least 4 A sink/source capability for switching frequencies above 50 kHz; the gate charge Qg plus high dV/dt demands higher driver current than silicon MOSFET equivalents.
Do not substitute a silicon IGBT in this position without re-validating the gate-drive circuit (voltage levels differ). Do not assume HiP247-compatible through-hole parts from other vendors share the same gate-drain-source pinout order - Infineon TO-247-3 SiC MOSFETs may have gate on pin 1, gate on pin 2, or gate on pin 3 depending on product, so verify against the device datasheet before PCB assembly.
Although the part includes a robust intrinsic body diode, external anti-parallel SiC Schottky diodes are sometimes added in parallel to further reduce deadtime-related reverse-recovery losses in very-high-frequency designs. In half-bridge legs, add 1-2 Ω of deadtime (typ. 100-200 ns) to prevent shoot-through given SiC MOSFETs' very fast switching edges, which is significantly shorter than equivalent silicon IGBT bridges.
Información de cumplimiento
AEC-Q101 (not AEC-Q100) automotive qualification per ST datasheet. ECOPACK-compliant RoHS/lead-free packaging. Halogen-free per ST environmental-compliance declaration.
