SI8244CB-C-IS1 - 4A Isolated Class-D Driver | Skyworks
N.º de pieza: SI8244CB-C-IS1 ✓ Activo| Cant. | Precio unitario | Total |
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| 1 | $0 | $0,00 |
| 10 | $0 | $0,00 |
| 100 | $0 | $0,00 |
| 500 | $0 | $0,00 |
| 1.000 | $0 | $0,00 |
SI8244CB-C-IS1 Descripción general
An isolated gate driver is a semiconductor interface that transfers timing commands across a galvanic-isolation barrier while placing the drive outputs on the isolated output side. In a full-bridge Class-D amplifier, it coordinates complementary MOSFET switching, prevents unwanted cross-conduction through dead time, and helps the power stage reproduce high-fidelity audio. The SI8244CB-C-IS1 is specifically described as a Class-D audio driver with a precision dead-time generator.
The verified product listing identifies two channels, a 4 A output rating, 2.5 kV isolation, a 10 V UVLO threshold, and PWM input. Additional source material describes high latchup immunity above 100 V/ns, 1500 Vrms output-to-output isolation, and supply voltage ratings of ±750 V. A high-precision linear programmable dead-time generator supports system tuning for the required tradeoff between distortion and switching efficiency.
Skyworks states that the Si8244 family targets isolated high-side and low-side gate driving in audio systems above 30 W. Because each channel is isolated from the input side and from the other output channel, the device can support transformer- or capacitor-isolated class-D power stages where maintaining separation and controlling ground noise are important. Its isolated architecture also helps keep switching energy away from sensitive audio-ground domains.
Typical uses include high-fidelity active speakers, professional audio amplifiers, subwoofer power stages, home-theater amplification, and other isolated full-bridge audio systems. PWM input compatibility makes it suitable for audio DACs, digital-audio processors, and dedicated Class-D controller outputs. System design should account for the external isolation barrier, isolated supplies, gate resistors, MOSFET selection, and thermal paths.
A key layout consideration is the isolation barrier: high dV/dt on outputs can couple displacement current into nearby input-side circuitry, so copper, creepage, and clearance must follow the manufacturer isolation guidance. Gate-loop inductance, dead time, supply bypassing, and Kelvin source returns also directly affect switching loss and distortion.
This page combines the verified manufacturer and distributor information, a controlled SI8244CB-D-IS1 replacement lead, and practical engineering guidance. It also identifies missing values rather than inventing ratings, prices, or a complete pin map where the supplied sources do not expose exact information.
Alternativas directas para SI8244CB-C-IS1 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con SI8244CB-C-IS1 (mismo factor de forma y huella) — difiere en Package, Product Type.
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SI8244CB-D-IS1
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Ver hoja de datos →SI8244CB-C-IS1 Valores máximos y características eléctricas
| Product Type | 2-channel isolated Class-D audio gate driver |
| Output Current | 4 A |
| Isolation Voltage | 2.5 kV |
| Output-to-Output Isolation | 1500 Vrms |
| Supply Voltage Rating | ±750 V |
| Undervoltage Lockout | 10 V |
| Input Signal | PWM |
| Dead-Time Control | High-precision linear programmable dead-time generator |
| Dead-Time Resolution | 1 µs |
| Latchup Immunity | >100 V/ns |
| Isolation Operating Band | Up to 8 MHz operation |
| Channel Count | 2 channels |
| Target Power Class | >30 W |
| Encapsulado | 16-SOIC, 3.90 mm width |
| Temperatura de funcionamiento | -40 °C to +125 °C |
| Tipo de montaje | Surface mount |
Guía de configuración de pines de SI8244CB-C-IS1 16-soic, 3.90 mm width
Configuración de pines para SI8244CB-C-IS1 (encapsulado 16-soic, 3.90 mm width). Este dispositivo de potencia presenta terminales de puerta, drenador y fuente. Para encapsulados no polarizados, consulte la hoja de datos del fabricante para conocer la orientación exacta del pin 1 y los detalles del footprint. Las aplicaciones habituales incluyen el diseño de fuentes de alimentación, el accionamiento de motores y la conmutación de cargas.
No hay datos detallados de patillaje disponibles para SI8244CB-C-IS1.
Consulte la hoja de datos para ver la configuración completa de patillas.
Aplicaciones típicas
SI8244CB-C-IS1 es adecuado para 6 aplicacións: High-Fidelity Active Speakers, Professional Power Amplifiers, Subwoofer Power Stages, Home-Theater Multi-Channel Amplification, Digital Audio Power Conversion, Isolated Full-Bridge Speaker Output.
High-Fidelity Active Speakers
The SI8244CB-C-IS1 fits an isolated full-bridge output stage because it provides two 4 A gate-driver channels and precise programmable dead time for Class-D amplification. The device accepts a PWM command and drives the high-side and low-side power MOSFETs used above 30 W. Precise dead-time control can reduce shoot-through while preserving low distortion, and 2.5 kV isolation allows the switching domain to remain separated from sensitive audio signal ground. The designer should still tune dead time to the selected MOSFETs and gate resistance rather than assuming one setting suits every output stage.
Recomendado
Professional Power Amplifiers
A professional power amplifier can use the SI8244CB-C-IS1 where each isolated channel drives a complementary MOSFET bridge with up to 4 A drive capability. The two-channel arrangement reduces the number of separate driver sections while retaining independent isolated outputs, and the 10 V UVLO helps prevent unintended gate activity during supply startup. Because professional amplifiers often combine large switching currents with sensitive signal-ground requirements, the device’s isolation barrier can simplify domain separation. Correct dead-time adjustment remains essential to minimize conduction overlap, distortion, and MOSFET heating under sustained full-power operation.
Recomendado
Subwoofer Power Stages
The SI8244CB-C-IS1 is appropriate for an isolated subwoofer bridge whose MOSFET outputs exceed the 30 W family target and require a 4 A gate driver. Its PWM input is compatible with a class-D modulator, while programmable dead time allows tuning between switching efficiency and distortion at low frequencies and high output power. The 1500 Vrms output-to-output isolation supports separate high-side and low-side supply domains. Thermal design should focus on external MOSFET dissipation because the driver primarily coordinates switching and its package heat is not the dominant audio-power sink.
Recomendado
Home-Theater Multi-Channel Amplification
In a home-theater power stage, the SI8244CB-C-IS1 can receive PWM commands from an audio controller and use two isolated outputs per bridge. The 2.5 kV isolation rating helps each amplifier channel maintain a controlled isolated switching domain, while the 4 A output can drive suitably selected external MOSFETs above 30 W. Precise programmable dead time gives the design team a tool for reducing crossover distortion without accepting unnecessary switching loss. Channel-to-channel layout symmetry and careful grounding of audio and power domains are as important as the gate-driver choice.
Recomendado
Digital Audio Power Conversion
The SI8244CB-C-IS1 suits digital-audio systems in which a controller outputs PWM and external MOSFETs perform the high-current switching. Its two isolated channels support one full bridge, while the 10 V undervoltage lockout provides a defined startup-related control function. The verified up-to-8 MHz input-to-output isolation description supports high-frequency modulation schemes, although signal integrity and propagation behavior must be checked in the exact operating mode. Keeping PWM traces away from output-side gate loops helps prevent common-impedance coupling and unwanted audio artifacts.
Recomendado
Isolated Full-Bridge Speaker Output
The SI8244CB-C-IS1 can control the high-side and low-side switches of an isolated full-bridge speaker output using its two independent driver outputs. The 1500 Vrms output-to-output separation supports distinct isolated rails, while PWM input accepts the modulator command. The 1 µs dead-time resolution provides a measurable control range for balancing switching loss against shoot-through and distortion. This topology is especially relevant when the speaker-amplifier stage must meet touch-safety or ground-isolation requirements, subject to the complete system’s applicable safety design and PCB spacing rules.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para SI8244CB-C-IS1 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | SI8244CB-D-IS1 |
|---|---|---|
| Package | 16-SOIC | SOIC-16 - same |
| Brand | Skyworks Solutions | Skyworks Solutions |
| Product Type | 2-channel isolated Class-D audio gate driver | Isolator/driver replacement with matching main functional characteristics |
| Replacement Evidence | Baseline device | FindIC reports consistent terminals and package with no existing-circuit modification |
Diferenciadores clave
- One verified direct replacement with PCB reuse (frente a SI8244CB-D-IS1)
- Two-channel isolated drive in one package (frente a Single-package discrete gate-driver approach)
- Measured dead-time programming range (frente a Fixed-delay gate drivers)
Notas de diseño
Treat the isolation barrier as the dominant PCB constraint. Keep primary-side and isolated-side copper separated by the manufacturer-recommended creepage and clearance, avoid placing copper beneath the barrier unless the package and datasheet explicitly permit it, and remove interfering planes along the full isolation edge. Route each PWM command away from output-side switching nodes. The supplied sources confirm 2.5 kV isolation and 1500 Vrms output-to-output isolation, but exact PCB spacing needs the applicable package, pollution-degree, and safety requirements.
Size the external MOSFETs, isolated supplies, and gate resistors around the 4 A driver rating rather than treating that rating as amplifier output power. Use separate, short supply-and-return paths for each driver channel so gate current does not share impedance with audio ground. Add local supply bypassing at the driver pins and verify startup behavior with the 10 V UVLO threshold. Dead time should be tuned to the MOSFET gate charge and switching speed to avoid both shoot-through and excessive body-diode conduction.
Keep the high-current gate loop compact by connecting gate driver, MOSFET gate, and Kelvin source return without broad shared copper paths. Parallel gate resistors, where appropriate, allow rise and fall rates to be tuned independently and can suppress unwanted ringing. Avoid routing isolated-side outputs directly beneath PWM or audio traces. Validate switching-node overshoot and output-to-input displacement-current coupling with an oscilloscope configured for the required common-mode and isolation conditions.
Most audio-power heat is normally dissipated in the external MOSFETs rather than in the driver IC, but gate-drive losses still rise with switching frequency, gate charge, and edge rate. Estimate driver dissipation from supply voltage times average switching current using actual timing data, then verify the 16-SOIC temperature rise on the assembled PCB. Do not infer MOSFET thermal margin from the driver’s 4 A output rating; calculate conduction and switching loss at the intended audio duty cycle and heat-sink condition.
Información de cumplimiento
The supplied data does not provide explicit compliance declarations. A DigChip snippet contains a RoHS field without a conclusive value, so RoHS status remains unknown.
