Si8271GB-ISR - 4A Isolated Gate Driver, 2.5kV, 8-SOIC | Skyworks
N.º de pieza: Si8271GB-ISR ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $5.21 | $5,21 |
| 10 | $4.78 | $47,80 |
| 100 | $4.05 | $405,00 |
| 500 | $3.55 | $1.775,00 |
| 1.000 | $3.12 | $3.120,00 |
Si8271GB-ISR Descripción general
An isolated gate driver is a galvanic isolation barrier combined with a high-current buffer stage, used to drive the gate of a high-side or low-side power transistor while protecting low-voltage control logic from high-voltage transients. The isolated gate driver category sits within the power management hierarchy: gate driver -> driver IC -> power management IC -> semiconductor. Si827x-family parts use proprietary silicon-oxide isolation instead of optocouplers or transformers, which eliminates LED-aging concerns and provides tight timing characteristics.
Key features include 4 A peak output current, 30 ns typical propagation delay, 400 kV/µs common-mode transient immunity (CMTI), 2.5 kV RMS isolation per UL1577, integrated UVLO with 3 V threshold for IGBT/SiC protection, de-glitch input filtering, and a programmable dead-time (DT) pin. The narrow-body 8-SOIC footprint is pin-compatible with common opto-isolated gate drivers, enabling direct PCB replacement in many designs.
The device uses Skyworks' proprietary silicon isolation technology based on RF-coupled differential transmission across a high-voltage silicon-oxide barrier. This approach eliminates the lifetime and CTR degradation inherent in optocouplers, and avoids the high-frequency emissions and large footprint of pulse transformers. The driver outputs swing rail-to-rail from VDD to GND on each side, supporting both +12 V and unipolar gate-drive rails.
Typical applications include driving IGBTs in motor-control inverters, SiC MOSFETs in EV traction and onboard chargers, GaN HEMTs in telecom DC-DC bricks, solar inverters, industrial SMPS half-bridge stages, and digital-isolation upgrades for opto-coupler-based legacy designs. The wide driver supply range supports both 5 V and 12/15 V gate-drive rails.
When designing with this part, place a 100 nF decoupling capacitor close to each VDD pin and a 4.7 µF bulk capacitor on the output-side VDD. For half-bridge use, the programmable dead-time pin prevents shoot-through; consult the manufacturer datasheet for the DT resistor selection table.
Alternativas directas para Si8271GB-ISR — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con Si8271GB-ISR (mismo factor de forma y huella) — difiere en Package, Common-Mode Transient Immunity (CMTI), Isolation Technology, Peak Output Current, Product Type.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
Si8271GB-IS
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
Si8271GB-AS
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
SI8271AB-ISR
✅ Sustitución directa✓ En stock
$2.45 / unidad
Ver hoja de datos →Si8271BB-ISR
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
SI8271GB-ISR
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
Si8271GB-ISR Valores máximos y características eléctricas
| Función | Isolated single-channel gate driver |
| Number of Channels | 1 |
| Peak Output Current | 4 A |
| Isolation Voltage (RMS) | 2.5 kV |
| Common-Mode Transient Immunity (CMTI) | 400 kV/µs (minimum) |
| Propagation Delay (Typ) | 30 ns |
| Input Supply Voltage (VDD1) | 2.5 V to 5.5 V |
| Output Supply Voltage (VDD2) | 4.5 V to 30 V |
| UVLO Threshold (Output Side) | 3 V (typ) |
| Input Type | Single PWM / dual digital inputs |
| Dead-Time Programming | Yes (DT pin) |
| Rango de temperatura de funcionamiento | -40 C to +125 C |
| Encapsulado | 8-SOIC (narrow body) |
| Tipo de montaje | Surface Mount |
| Nivel MSL | MSL 3 (168 hours) |
| Estado RoHS | Compliant |
| AEC-Q100 Automotive | Yes (per Arrow listing) |
| Isolation Technology | Silicon-oxide (proprietary RF-coupled) |
Configuración de pines de Si8271GB-ISR
| Pin 1 | VDD1 — Input-side supply voltage (2.5V to 5.5V) |
| Pin 2 | IN+ — Non-inverting PWM input |
| Pin 3 | IN- — Inverting PWM input (or tied to IN+ for non-inverting) |
| Pin 4 | GND1 — Input-side ground reference |
| Pin 5 | GND2 — Output-side ground reference (isolated) |
| Pin 6 | OUT — Gate-drive output (4A peak) |
| Pin 7 | VDD2 — Output-side driver supply (4.5V to 30V) |
| Pin 8 | DT — Dead-time programming pin (resistor to GND2) |
Aplicaciones típicas
Si8271GB-ISR es adecuado para 6 aplicacións: SiC MOSFET Half-Bridge Drive, Industrial Motor-Drive IGBT Inverter, Telecom DC-DC Brick (GaN Half-Bridge), Solar Inverter Power Stage, On-Board EV Charger (OBC) PFC Stage, Digital Isolation Upgrade (Replace Legacy HCPL-3120).
SiC MOSFET Half-Bridge Drive
Driving SiC MOSFETs in a half-bridge requires both galvanic isolation between the high-side switch and the low-voltage controller, plus enough peak gate current to charge the SiC gate quickly at high dV/dt. The Si8271GB-ISR's 4 A peak source/sink output and 2.5 kV RMS withstand voltage allow direct gate drive of 1200 V SiC MOSFETs at switching frequencies above 100 kHz, while the 400 kV/µs CMTI prevents latch-up at the SiC's high dV/dt edges. The programmable dead-time (DT) pin allows the engineer to optimize dead time below 50 ns, which directly reduces switching loss and improves inverter efficiency by 1-2 percent.
Recomendado
Industrial Motor-Drive IGBT Inverter
Three-phase IGBT inverters for industrial motor drives require six isolated gate drivers with stable timing and robust isolation across 690 V AC bus transients. The Si8271GB-ISR's 2.5 kV RMS withstand voltage and 400 kV/µs CMTI protect the control MCU from common-mode noise generated by the IGBT's hard-switching edges, while its 4 A peak output drives 600 V/1200 V IGBT modules with typical gate charges of 100-300 nC directly. The narrow-body 8-SOIC footprint lets the engineer place drivers close to each IGBT module, minimizing gate-loop inductance and ringing that would otherwise waste switching energy.
Recomendado
Telecom DC-DC Brick (GaN Half-Bridge)
48 V telecom DC-DC bricks converting to 12 V or 5 V at multi-kW levels use GaN HEMTs in a high-density half-bridge topology, where the driver must deliver very fast edges without suffering false triggering. The Si8271GB-ISR's 30 ns propagation delay and 400 kV/µs CMTI directly support GaN switching edges above 50 V/ns, while the 4 A peak output charges typical 100 V GaN gates in under 10 ns. The 8-SOIC footprint drops into standard isolated-driver footprints in telecom reference designs, allowing direct upgrades from slower optocoupler-based drivers and a measurable efficiency improvement of 0.5-1.0 percent at full load.
Recomendado
Solar Inverter Power Stage
Solar string inverters operating from 600 V to 1500 V DC bus require isolated drivers that withstand high DC bus voltages and fast transient events. The Si8271GB-ISR's 2.5 kV RMS isolation and 4 A peak drive allow direct gate drive of 1200 V/1700 V IGBTs in the DC-DC boost and full-bridge stages, with the integrated UVLO at 3 V preventing partial-turn-on that would cause thermal failure in SiC or IGBT switches. The narrow-body 8-SOIC package reduces PCB area versus DIP-8 opto-driver footprints, allowing higher power density on the inverter power board.
Recomendado
On-Board EV Charger (OBC) PFC Stage
On-board EV chargers use a totem-pole PFC stage at the AC-DC front end with high-voltage GaN or SiC switches; the upper switch needs an isolated driver referenced to a floating node that swings at line frequency. The Si8271GB-ISR's 2.5 kV withstand and high CMTI make it suitable for the upper GaN/SiC switch in this topology, where dV/dt exceeds 50 kV/µs at every line cycle. The 4 A peak output and tight propagation delay allow totem-pole PFC switching above 100 kHz, achieving 99 percent efficiency demanded by automotive OBC thermal budgets.
Recomendado
Digital Isolation Upgrade (Replace Legacy HCPL-3120)
Industrial SMPS designs using legacy HCPL-3120 opto-isolated gate drivers suffer from LED aging, limited CMTI (~15 kV/µs), and large propagation delay variation over temperature. The Si8271GB-ISR offers a drop-in pin-compatible upgrade in the same 8-SOIC footprint, with 400 kV/µs CMTI (>25x improvement), 30 ns propagation delay, and no LED-aging mechanism - dramatically extending service life. Existing PCB layouts, gate-drive resistors, and bootstrap networks remain unchanged, allowing fast re-design without mechanical changes to the power board.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para Si8271GB-ISR — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | Si8271GB-IS | Si8271GB-AS | Si8271AB-ISR | Si8271BB-ISR |
|---|---|---|---|---|---|
| Package | 8-SOIC (narrow body) | 8-SOIC (narrow body) - same | 8-SOIC (narrow body) - same | 8-SOIC (narrow body) - same | 8-SOIC (narrow body) - same |
| Brand | Skyworks Solutions | Skyworks Solutions | Skyworks Solutions | Skyworks Solutions | Skyworks Solutions |
| Peak Output Current | 4 A | 4 A | 4 A | 4 A | 4 A |
| Isolation Voltage (RMS) | 2.5 kV | 2.5 kV | 2.5 kV | 2.5 kV | 2.5 kV |
| CMTI (minimum) | 400 kV/µs | 400 kV/µs | 400 kV/µs | 400 kV/µs | 400 kV/µs |
| Propagation Delay (typ) | 30 ns | 30 ns | 30 ns | 30 ns | 30 ns |
| Automotive Grade (AEC-Q100) | Yes (per Arrow listing) | No | Yes (AEC-Q100) | No | No |
Diferenciadores clave
- 400 kV/µs minimum CMTI versus ~15 kV/µs typical for opto-isolated drivers (frente a HCPL-3120 (legacy opto-isolated gate driver))
- Silicon-oxide isolation eliminates LED aging and CTR degradation (frente a HCPL-3120 (opto-isolated driver))
- Same 8-SOIC pinout enables direct drop-in replacement of legacy opto drivers (frente a ADuM4121 (digital isolator gate driver))
Notas de diseño
Estimated: with VDD2 = 12 V and 4 A peak drive into a 100 nC gate charge, the Si8271GB-ISR switch-on transition is approximately 25 ns. Place a 100 nF X7R decoupling capacitor within 3 mm of the VDD2 pin (pin 7) and a 4.7 µF bulk capacitor on the same node to handle the di/dt pulse. The VDD1 supply also needs 100 nF plus 1 µF local decoupling per Skyworks' reference design.
At 100 kHz switching into a 100 nC gate with 12 V gate drive, gate-drive power per channel is approximately P = Qg * V * f = 100e-9 * 12 * 100e3 = 0.12 W. The narrow-body 8-SOIC has theta_JA around 110 C/W on a 1 oz 1 sq-inch copper pour, yielding a 13 C junction temperature rise - well within limits. For continuous operation above 200 kHz or with larger IGBT gate charges, increase copper area or add thermal relief to keep Tj below 125 C.
Keep the gate-drive loop (OUT -> gate resistor -> gate -> source/emitter -> GND2 -> back to OUT) as small as physically possible, ideally less than 1 cm² loop area. Use a star-ground tie for GND2 to the power-switch source/emitter Kelvin pin; do not share GND2 with the digital control ground. Skyworks' Si827x reference design also recommends a 4.7 kΩ pull-up on IN+ when used in single-PWM non-inverting mode.
Do not exceed VDD2 = 30 V (the absolute maximum) - this destroys the output-side gate-driver supply rail. Always program dead-time via the DT pin to avoid shoot-through in half-bridge configurations; consult the datasheet's DT-resistor selection table for the exact timing. Finally, verify creepage and clearance distances on the PCB per IEC 60950 or IEC 62368-1 for the target working voltage, since the 8-SOIC narrow-body limits practical use to ~600 V reinforced or ~1000 V basic insulation.
Información de cumplimiento
AEC-Q100 qualification confirmed via Arrow automotive listing (Si8271GB-ISR is part of the Skyworks automotive-isolated-driver portfolio). RoHS and lead-free compliance per Skyworks product page.
