SI8286BC-IS - 4A Isolated SiC/IGBT Gate Driver | Skyworks
N.º de pieza: SI8286BCIS ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $3.92 | $3,92 |
| 10 | $3.62 | $36,20 |
| 100 | $3.18 | $318,00 |
| 500 | $2.71 | $1.355,00 |
| 1.000 | $2.34 | $2.340,00 |
SI8286BCIS Descripción general
An isolated gate driver is a type of galvanically-isolated semiconductor driver that delivers high-current switching signals across a reinforced insulation barrier, providing both level shifting (to handle the floating high-side rail of a half-bridge) and safety isolation (to protect low-voltage control logic from high-voltage power stages). Isolated gate drivers belong to the broader hierarchy: gate driver -> driver IC -> power management IC -> semiconductor. Capacitively-coupled isolated drivers (Skyworks Si828x, TI UCC217xx, ADI ADuM412x) offer smaller size, higher CMTI, and longer service life than optocoupler-based alternatives, which are subject to LED degradation.
Key features of the SI8286BC-IS include integrated desaturation detection, an active Miller clamp, an isolated analog feedback channel for gate-health monitoring, and a fault output with auto-restart capability. The driver operates from a 3 V to 5.5 V VDD side and a 9 V to 30 V VCC side, producing gate drive voltages suitable for both standard IGBTs (-7 V / +15 V typ.) and SiC FETs (+15 V / -3 V typ.). The integrated dead-time and overlap protection simplify firmware on the host MCU. Spread-spectrum modulation on the isolation carrier reduces EMI emissions, and the wide-body SOIC-16 footprint provides >8 mm creepage to meet reinforced insulation spacing on the PCB.
Typical applications include industrial motor drives, solar inverters, EV traction inverters, UPS systems, and welding power supplies. The device is particularly well-suited to high-frequency (>50 kHz) hard-switched topologies where its 125 kV/us CMTI prevents false triggering from fast dV/dt events on the switching node. When designing with this part, place the gate-drive loop capacitors (1 uF ceramic between VDDA/VSSA and VDDB/VSSB) within 5 mm of the respective pins to keep the high-current loop small and to maximize CMTI margin in noisy environments.
Alternativas directas para SI8286BCIS — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con SI8286BCIS (mismo factor de forma y huella) — difiere en Package, Peak Output Current, Isolation Technology, Operating Temperature, Product Type.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
SI8285BC-IS
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
SI8284BC-IS
✅ Sustitución directa✓ En stock
$4.7 / unidad
Ver hoja de datos →SI8286BD-IS
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
UCC21750QDWQ1
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
ADUM4135BRWZ
✅ Sustitución directa✓ En stock
$3.04 / unidad
Ver hoja de datos →SI8286BCIS Valores máximos y características eléctricas
| Product Type | Galvanically Isolated Gate Driver |
| Target Switch | SiC FET and IGBT |
| Peak Output Current | 4 A |
| Number of Channels | 1 |
| Isolation Technology | Capacitive (RF) Coupling |
| Isolation Voltage (Withstand) | 3750 Vrms |
| Common-Mode Transient Immunity (CMTI) | 125 kV/us |
| VDD Supply (Input Side) | 3.0 V to 5.5 V |
| VCC Supply (Output Side) | 9 V to 30 V |
| Temperatura de funcionamiento | -40 C to +125 C |
| Encapsulado | WB SOIC-16 (wide-body, 16-pin SOIC) |
| Tipo de montaje | Surface Mount |
| Integrated Safety Features | Desaturation detection, Miller clamp, fault output, isolated analog feedback |
Configuración de pines de SI8286BCIS
| Pin 1 | VDD — Input-side logic supply (3.0 V to 5.5 V) |
| Pin 2 | PWM — PWM input signal from controller |
| Pin 3 | FLT_B — Fault output (active low) |
| Pin 4 | EN — Enable input |
| Pin 5 | RDY — Ready output indicator |
| Pin 6 | FB — Analog feedback from output side |
| Pin 7 | NC — Not connected (per datasheet) |
| Pin 8 | GNDA — Input-side ground reference |
| Pin 9 | VCCB — Output-side gate drive supply (9 V to 30 V) |
| Pin 10 | DESAT — Desaturation detection input |
| Pin 11 | VSSB — Output-side ground reference |
| Pin 12 | NC — Not connected (per datasheet) |
| Pin 13 | OUT — Gate drive output to SiC/IGBT gate |
| Pin 14 | CLAMP — Active Miller clamp |
| Pin 15 | VEEB — Negative gate drive supply (optional) |
| Pin 16 | GNDB — Output-side power ground |
Aplicaciones típicas
SI8286BCIS es adecuado para 6 aplicacións: Industrial Motor Drives, Solar String Inverters, EV On-Board Chargers, Uninterruptible Power Supplies (UPS), Industrial Welding Power Supplies, Server / Data Center Power Supplies.
Industrial Motor Drives
The SI8286BC-IS is purpose-built for 600 V/690 V industrial variable-frequency drives (VFDs) controlling three-phase IGBT bridges in motor control applications. The 4 A peak gate current enables <50 ns switching transitions on 50 A-class IGBT modules, while the 125 kV/us CMTI prevents false triggering in high-dV/dt hard-switched environments. Integrated desaturation protection eliminates external short-circuit detection circuitry, reducing BOM cost. The wide-body SOIC-16 footprint provides >8 mm creepage to meet IEC 61800-5-1 reinforced insulation on the high-side gate drive channels. Skyworks' capacitive isolation avoids optocoupler LED aging, delivering >100 year barrier life for continuous-duty industrial operation.
Recomendado
Solar String Inverters
For 1500 V DC photovoltaic string inverters, the SI8286BC-IS drives 1200 V SiC FETs at switching frequencies from 50 kHz to 200 kHz where high CMTI is essential to reject the fast dV/dt of the SiC switching node. The 4 A peak output drives SiC gates with Qg of 50-200 nC to full enhancement in under 30 ns, minimizing switching losses and boosting inverter efficiency above 99%. The integrated analog feedback channel reports gate voltage to the host controller for real-time gate-health monitoring and SiC aging detection. The 3.75 kVrms isolation meets the reinforced insulation requirements for solar inverters per IEC 62109, and the wide-body SOIC package provides the PCB creepage needed for 1500 V system voltages.
Recomendado
EV On-Board Chargers
The SI8286BC-IS drives the SiC primary-side switches in 6.6 kW to 22 kW EV on-board charger (OBC) power stages operating from 400 V or 800 V battery architectures. The 4 A gate drive strength supports SiC FETs at switching frequencies up to 250 kHz, enabling smaller magnetics and higher power density for OBC designs targeting >4 kW/L. The 125 kV/us CMTI tolerates the rapid voltage transitions of 800 V SiC half-bridges without false triggering. Integrated desaturation detection provides fast short-circuit protection (<2 us) critical for SiC devices. The wide-body SOIC-16 footprint and -40 C to +125 C operating range support automotive under-hood thermal environments.
Recomendado
Uninterruptible Power Supplies (UPS)
The SI8286BC-IS is used in 10-100 kVA double-conversion UPS systems to drive the IGBT bridge in the inverter and rectifier power stages that convert between battery DC, grid AC, and load AC. The 4 A peak current drives 600 V/100 A IGBTs at 20 kHz switching with low switching losses, supporting >96% inverter efficiency. Galvanic isolation protects the DSP control logic from the high-voltage DC link. The integrated Miller clamp prevents parasitic turn-on of the complementary switch in the half-bridge during fast transients. For 3-phase UPS systems, three SI8286BC-IS drivers provide high-side/low-side gate drive for each phase leg, with synchronization controlled by the system DSP.
Recomendado
Industrial Welding Power Supplies
In inverter-based welding machines (MIG, TIG, plasma cutters), the SI8286BC-IS drives the IGBT or SiC primary switching stage at frequencies up to 100 kHz to enable smaller transformers and lighter weight welding equipment. The 4 A peak output drives large IGBT modules with Qg of 100-300 nC, supporting welding currents of 200-400 A. The 3.75 kVrms isolation and 8 mm SOIC-16 creepage meet the reinforced insulation requirements of IEC 60974-1 for arc welding equipment. The high CMTI rating rejects the very fast dV/dt transients generated during arc strikes, which can exceed 100 kV/us on the switching node.
Recomendado
Server / Data Center Power Supplies
The SI8286BC-IS drives the primary-side SiC or GaN switches in 3 kW to 8 kW 80 Plus Titanium server PSU power-factor-correction (PFC) and DC-DC converter stages. At switching frequencies of 100-300 kHz, the 4 A peak output minimizes GaN/SiC switching losses and maximizes power density. The 125 kV/us CMTI prevents false triggering from the very fast edges of GaN switches (up to 100 V/ns). The integrated fault feedback to the PFC controller enables cycle-by-cycle current limiting and short-circuit protection required for hot-swap server PSU architectures. Wide-body SOIC-16 footprint fits within standard 1U server PSU form factors.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para SI8286BCIS — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | SI8285BC-IS | SI8284BC-IS | UCC21750QDWQ1 | ADUM4135BRWZ |
|---|---|---|---|---|---|
| Package | WB SOIC-16 | WB SOIC-16 - same | WB SOIC-16 - same | SOIC-16W - same wide-body footprint | WB SOIC-16 - same |
| Brand | Skyworks Solutions | Skyworks Solutions (same brand) | Skyworks Solutions (same brand) | Texas Instruments (cross-brand) | Analog Devices (cross-brand) |
| Peak Output Current | 4 A | 6 A source / 4 A sink | 4 A | 5 A (5 A source / 5 A sink) | 4 A |
| Isolation Voltage | 3750 Vrms | 3750 Vrms | 3750 Vrms | 5700 Vrms (reinforced) | 5000 Vrms (reinforced) |
| CMTI | 125 kV/us | 125 kV/us | 125 kV/us | 150 kV/us | 100 kV/us |
| Isolation Technology | Capacitive (RF) | Capacitive (RF) | Capacitive (RF) | Capacitive | iCoupler (transformer) |
| Integrated Desat Protection | Yes | Yes | Yes | Yes | No (external required) |
| Integrated Bias Flyback Controller | No | No | No | Yes (integrated flyback bias) | No |
| AEC-Q100 Automotive Grade | No (industrial -40 to +125 C) | No (industrial) | No (industrial) | Yes (Q1 suffix = AEC-Q100) | No (industrial) |
Diferenciadores clave
- Capacitive RF isolation with >100 year projected barrier life (frente a Optocoupler-based gate drivers (e.g., HCPL-3120))
- Integrated isolated analog feedback channel for gate-health monitoring (frente a TI UCC21750)
- Industry-leading 125 kV/us CMTI for SiC half-bridge reliability (frente a Analog Devices ADuM4135)
Notas de diseño
Place the VDD-to-GNDA bypass capacitor (1 uF X7R ceramic) within 5 mm of pins 1 and 8, and the VCCB-to-VSSB bypass capacitor (1 uF X7R ceramic plus 10 uF bulk) within 5 mm of pins 9 and 11. The high-current gate drive loop must be minimized - keep the trace from pin 13 (OUT) to the SiC/IGBT gate shorter than 25 mm with width >= 1 mm to limit parasitic inductance. Maintain at least 8 mm creepage between input-side (pins 1-8) and output-side (pins 9-16) copper pours on the top and bottom layers; do not run any signal traces across the isolation barrier.
Estimated: At continuous 4 A peak switching at 100 kHz with a gate charge of 100 nC (typical 1200 V SiC FET), the SI8286BC-IS dissipates approximately Pdrv = Qg * VCC * fsw = 100 nC * 18 V * 100 kHz = 0.18 W from gate charge alone, plus additional loss during gate transition. Total drive loss typically stays below 0.5 W, well within the WB SOIC-16 package's 100 C/W theta_JA. Standard JEDEC 4-layer PCB with copper thermal vias under the exposed pad (if present) is sufficient for industrial temperature operation.
Do not exceed VCCB of 30 V (absolute max). Always tie the DESAT pin to the SiC/IGBT collector/drain through a high-voltage blocking diode (e.g., UF4007) and a small RC blanking network (typically 100 ohm + 100 pF) to prevent false desaturation trips during turn-on transients. The VEEB pin can be connected to a negative supply (-3 V to -8 V) to prevent parasitic turn-on of SiC FETs; if unused, leave it floating or tie to VSSB. Failure to use the Miller clamp (pin 14) in half-bridge configurations can result in cross-conduction during high dV/dt transients.
The wide-body SOIC-16 package provides approximately 8 mm of internal clearance to meet 600 V reinforced insulation per IEC 61800-5-1. For 1200 V or 1500 V applications, additional PCB-level creepage is required: maintain at least 12 mm (1200 V) or 16 mm (1500 V) of surface creepage distance between primary and secondary copper, including under the package. Use slotting (PCB cut-out) under the SOIC-16 to achieve this creepage if needed. Place an isolation barrier slot exactly under the IC body to maximize both through-air and surface distances.
Información de cumplimiento
UL 1577 recognized for 3750 Vrms isolation per Skyworks datasheet. VDE 0884-11 reinforced insulation certified. Not AEC-Q100 qualified - select automotive-graded Si8286 variant or UCC21750-Q1 for EV applications. RoHS and REACH compliant per manufacturer declaration.
