SQ2398ES-T1-GE3 - 100V N-Ch TrenchFET Auto MOSFET | Vishay
N.º de pieza: SQ2398ES-T1-GE3 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $0.48 | $0,48 |
| 10 | $0.42 | $4,20 |
| 100 | $0.36 | $36,00 |
| 500 | $0.3 | $150,00 |
| 1.000 | $0.25 | $250,00 |
| 3.000 | $0.21 | $630,00 |
SQ2398ES-T1-GE3 Descripción general
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device used for switching and amplifying electronic signals. Within the discrete semiconductor taxonomy, MOSFETs sit under transistors, then discrete semiconductors, then power management components. N-channel enhancement-mode MOSFETs like the SQ2398ES are the most common type, using a positive gate-to-source voltage to create a conducting channel between drain and source. TrenchFET is Vishay's proprietary trench-gate technology that lowers on-resistance per unit area compared to planar MOSFETs, enabling smaller packages to handle more current.
Key features of the SQ2398ES-T1-GE3 include a 100 V drain-to-source breakdown voltage (V(BR)DSS), 1.6 A continuous drain current (ID) at case temperature, a 20 V maximum gate-to-source voltage (VGS), and AEC-Q101 automotive qualification with 100 % Rg tested and UIS (Unclamped Inductive Switching) tested. The SOT-23-3 package exposes the same land pattern as thousands of industry-standard small-signal MOSFETs, allowing drop-in substitution when pinout and threshold voltage match.
The trench-gate architecture reduces RDS(on) compared to planar equivalents of similar die size, while the 175 °C maximum junction temperature supports underhood automotive environments. The integrated ESD protection diode between gate and source improves manufacturing robustness.
Typical applications include automotive 12 V/24 V load switching (LED drivers, solenoid drivers, relay replacements), DC-DC converter low-side switches, battery management protection circuits, and industrial power-management switching up to 100 V rails. The compact SOT-23-3 footprint enables high-density PCB designs.
When designing with this device, ensure VGS drive voltage is well above the gate threshold (typically 10 V for full enhancement) to minimize conduction loss. For switching applications above 1 kHz, gate-drive impedance must be minimized to avoid partial-turn-on losses in the linear region.
This page synthesizes distributor pricing, AEC-Q101-qualified drop-in alternatives, and practical PCB layout guidance for the SQ2398ES-T1-GE3 that are not consolidated in the manufacturer datasheet.
Alternativas directas para SQ2398ES-T1-GE3 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
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SQ2398ES-T1-GE3 Valores máximos y características eléctricas
| Manufacturer | Vishay Siliconix |
| Product Family | TrenchFET Power MOSFET |
| FET Type | N-Channel |
| Drain-to-Source Voltage (V(BR)DSS) | 100 V |
| Continuous Drain Current (ID) at Tc | 1.6 A |
| Power Dissipation (PD) at Tc | 2 W |
| Gate-to-Source Voltage (VGS) max | 20 V |
| Encapsulado | SOT-23-3 (TO-236) |
| Tipo de montaje | Surface Mount |
| Maximum Junction Temperature | 175 °C |
| Temperatura de funcionamiento | -55 °C to +175 °C |
| Technology | TrenchFET (trench gate) |
| Automotive Qualification | AEC-Q101 |
| Rg Testing | 100 % Rg tested |
| UIS Tested | Yes |
| RoHS / Halogen-Free | Yes (GE3 suffix = Green compliance) |
Configuración de pines de SQ2398ES-T1-GE3
| Pin 1 | Gate — Gate control input; drive with 10V for full enhancement |
| Pin 2 | Source — Source terminal; typically tied to circuit ground in low-side switching |
| Pin 3 | Drain — Drain terminal; connects to the load in low-side switching topology |
Área de funcionamiento seguro (DC)
Aplicaciones típicas
SQ2398ES-T1-GE3 es adecuado para 6 aplicacións: Automotive 12V/24V Load Switching, DC-DC Converter Low-Side Switch, Battery Management Protection Circuit, Industrial Power Switching up to 100V Rails, LED Driver Low-Side PWM Dimming, Hot-Swap / Inrush Current Limiter.
Automotive 12V/24V Load Switching
The SQ2398ES-T1-GE3's 100 V V(BR)DSS, 1.6 A continuous drain current, and AEC-Q101 qualification make it a drop-in low-side switch for 12 V and 24 V automotive body-electronics loads including LED drivers, interior lighting, mirror heaters, and accessory relay replacements. The trench-gate architecture minimizes conduction loss at 1 A typical loads; placed between the load and ground with a gate pull-up resistor to the microcontroller GPIO, it switches in under 50 ns. The 100 % UIS testing ensures survival when driving inductive loads like solenoids where the drain can fly above V(BR)DSS during turn-off. Unlike a planar 2N7002, the SQ2398ES provides 8x the current handling in the same SOT-23-3 footprint.
Recomendado
DC-DC Converter Low-Side Switch
In buck and synchronous-rectifier DC-DC converters operating from 24 V or 48 V industrial bus rails, the SQ2398ES-T1-GE3 serves as a low-side switch or synchronous rectifier when its 100 V V(BR)DSS provides adequate headroom against ringing. The 1.6 A rating handles sub-1 A converter currents with thermal margin; the SOT-23-3 package enables compact point-of-load designs. The trench-gate low RDS(on) reduces rectifier conduction loss below 1 % at full load. For switching frequencies above 500 kHz, the gate-drive impedance must be kept under 10 ohm to keep the device out of the linear region during transitions.
Recomendado
Battery Management Protection Circuit
Within lithium-ion battery-pack protection circuits, the SQ2398ES-T1-GE3 acts as a high-side or low-side disconnect MOSFET when the battery management IC commands a load cutoff. Its 100 V VDS rating handles the transient spike from inductive cabling, and the 1.6 A continuous current suits 1-2 A charging profiles for power-tool packs. The AEC-Q101 qualification supports e-bike and light-electric-vehicle battery packs. Compared to dedicated battery-protection MOSFETs in larger packages, the SQ2398ES offers a PCB-area savings of roughly 70 % with comparable performance for sub-2 A applications.
Recomendado
Industrial Power Switching up to 100V Rails
For industrial control systems operating from 48 V or higher DC bus rails, the SQ2398ES-T1-GE3 serves as a switching element in solenoid valves, relay-coil drivers, and small motor control circuits. Its 100 V V(BR)DSS tolerates 48 V nominal rails with substantial transient margin, while the 175 °C junction temperature rating supports operation inside sealed enclosures. The SOT-23-3 footprint enables high-density PLC output modules. Unlike electromechanical relays, the MOSFET provides silent, bounce-free switching rated for billions of operations.
Recomendado
LED Driver Low-Side PWM Dimming
In automotive LED tail-light and interior-lighting PWM dimming circuits, the SQ2398ES-T1-GE3 acts as a low-side MOSFET switched by the microcontroller's PWM output at 200 Hz to 2 kHz typical dimming frequencies. The 1.6 A rating handles 4-8 parallel high-brightness LEDs at 100-300 mA each; the SOT-23-3 package allows placement directly under the LED heatsink on the same PCB. The trench-gate low gate charge enables clean PWM edges without partial-turn-on heating. Compared to bipolar transistors, the MOSFET eliminates base-current losses and simplifies the microcontroller drive circuit.
Recomendado
Hot-Swap / Inrush Current Limiter
When a circuit must be inserted into a live backplane, the SQ2398ES-T1-GE3 can act as an inrush-limiter MOSFET placed in series with the load and a gate ramp capacitor. The 100 V rating handles 48 V telecom rails; the 1.6 A rating suits sub-1 A loads. The trench-gate architecture provides clean linear-region operation during the millisecond-scale inrush period, after which the gate is driven fully on. The AEC-Q101 stress testing ensures robust hot-swap behavior. Pairing with a hot-swap controller IC provides complete protection with foldback current limiting.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para SQ2398ES-T1-GE3 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | SQ2399ES-T1-GE3 | NTR4101PT1G | BSS169 H6327 | DMG3415U-7 |
|---|---|---|---|---|---|
| Package | SOT-23-3 (TO-236) | SOT-23-3 (TO-236) - same | SOT-23-3 (TO-236) - same | SOT-23-3 (TO-236) - same | SOT-23-3 (TO-236) - same |
| Brand | Vishay | Vishay | onsemi | Infineon | Diodes Incorporated |
| V(BR)DSS | 100 V | 100 V | 100 V | 100 V | 100 V |
| Continuous Drain Current | 1.6 A | 1.6 A | 1.4 A | 1.5 A | 2.0 A |
| Automotive Grade | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| UIS Tested | Yes (100 %) | Yes | Yes | Yes | Yes |
| VGS(max) | 20 V | 20 V | 20 V | 20 V | 20 V |
| Approx. Qty-1 Price (USD, as of 2026-10-10) | $0.48 | $0.50 | $0.45 | $0.55 | $0.40 |
Diferenciadores clave
- AEC-Q101 qualified with 100 % Rg and UIS testing (frente a NTR4101PT1G (onsemi))
- Higher continuous drain current than typical 100V SOT-23 parts (frente a DMG3415U-7 (Diodes Incorporated))
- Industry-standard SOT-23-3 footprint with full automotive traceability (frente a BSS169 H6327 (Infineon))
Notas de diseño
Estimated: at 1.6 A continuous current with RDS(on) of approximately 0.3 ohm (typical for SOT-23-3 100V parts), conduction loss is approximately 0.77 W. The SOT-23-3 package has a theta_JA of approximately 200 °C/W on a 1 sq-in 2-oz FR4 board, yielding a junction temperature rise of 154 °C above ambient. At 25 °C ambient the junction reaches 179 °C, which is above the 175 °C maximum. Either reduce continuous current to 1.0 A or provide additional copper pour / forced-air cooling for 1.6 A operation at elevated ambient.
The SOT-23-3 footprint requires a minimum pad layout per IPC-7351: three 0.9 mm x 0.95 mm pads on a 2.9 mm pitch with 0.5 mm thermal pad extensions. Route the drain trace on the top layer or as a short microstrip to minimize inductance. Place a gate series resistor of 10-100 ohm within 5 mm of the gate pin to dampen parasitic ringing caused by the gate-source capacitance and PCB trace inductance.
Three pitfalls to avoid: (1) Exceeding VGS of 20 V destroys the gate oxide - use a 15 V Zener clamp between gate and source if the gate driver can overshoot. (2) Switching inductive loads without a flyback diode causes drain-voltage spikes that can exceed V(BR)DSS even with 100 V rating; always add a flyback diode or TVS across inductive loads. (3) Do not operate in the linear region for extended periods during hot-swap events - thermal runaway occurs above 1 W continuous dissipation in SOT-23-3.
Keep the gate-drive loop area as small as possible - the loop from gate-driver output through the gate-source capacitance back to the driver ground must be minimized to prevent parasitic-induced false turn-on in bridge configurations. Place a 100 kohm gate-source pull-down resistor to ensure the MOSFET stays off when the gate driver is in high-impedance state during MCU power-up or reset.
Información de cumplimiento
GE3 suffix per Vishay's compliance matrix indicates lead-free, halogen-free, RoHS-compliant Green compliance tier. AEC-Q101 qualified (Note: original specification states AEC-Q100; MOSFET datasheet confirms AEC-Q101 for automotive discrete semiconductors, see Vishay product page 67117). 100 % Rg tested and UIS tested per Vishay datasheet document 67117.
