STF12N60M2 - 12A, 600V N-Channel Power MOSFET | STMicroelectronics
N.º de pieza: STF12N60M2 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $2.0974 | $2,10 |
STF12N60M2 Descripción general
A Power MOSFET is a type of field-effect transistor optimized for switching and amplification in power electronics. It operates by controlling the conductivity between the drain and source terminals through an insulated gate voltage. Power MOSFETs are essential components in switch-mode power supplies, motor drives, and lighting systems, where they handle high voltages and currents with minimal power loss. They are part of the broader family of discrete semiconductors, which also includes diodes, IGBTs, and thyristors.
Key features of the STF12N60M2 include a low gate charge (Qg) of 25nC, which enables fast switching and reduces driver losses, and a high dv/dt capability for robust performance in hard-switching topologies. The device also features an intrinsic body diode with a fast recovery time, making it suitable for bridge circuits and inductive loads. The TO-220FP package offers a thermal resistance of 3.5°C/W, allowing efficient heat dissipation without an additional insulating pad.
The MDmesh M2 technology utilizes a vertical structure with a reduced on-resistance and improved switching performance compared to conventional planar MOSFETs. This results in lower conduction and switching losses, enhancing overall system efficiency. The device is avalanche-rated, with an avalanche energy of 400mJ, ensuring reliability under extreme conditions.
Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, LED lighting drivers, and motor control. In an SMPS, the STF12N60M2 can be used as the main switching element in a flyback or forward converter, where its low RDS(on) minimizes conduction losses and its fast switching reduces transition losses.
When designing with this device, ensure proper gate drive voltage (typically 10V) to fully enhance the channel and minimize on-resistance. The gate-source voltage must not exceed ±25V to prevent oxide breakdown. Additionally, consider the thermal impedance of the TO-220FP package and provide adequate heatsinking for high-power applications.
Alternativas directas para STF12N60M2 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
STF12N60M2-EP
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
STF12N60M2-1
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
STF12N60M2-2
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IPP60R099P7
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
FCP12N60
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
TK12A60D
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
STF12N60M2 Valores máximos y características eléctricas
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID) at 25°C | 12 A |
| Continuous Drain Current (ID) at 100°C | 7.6 A |
| Pulsed Drain Current (IDM) | 36 A |
| Gate-Source Voltage (VGS) | ±25 V |
| Power Dissipation (PD) | 45 W |
| On-Resistance (RDS(on)) | 0.38 Ω typical |
| Gate Charge (Qg) | 25 nC |
| Input Capacitance (Ciss) | 1100 pF |
| Output Capacitance (Coss) | 90 pF |
| Reverse Transfer Capacitance (Crss) | 5 pF |
| Avalanche Energy (EAS) | 400 mJ |
| Rango de temperatura de funcionamiento | -55°C to +150°C |
| Encapsulado | TO-220FP |
| Tipo de montaje | Through Hole |
| Estado RoHS | Compliant |
Configuración de pines de STF12N60M2
| Pin 1 | Gate — Gate drive input |
| Pin 2 | Drain — Drain terminal |
| Pin 3 | Source — Source terminal |
Área de funcionamiento seguro
Aplicaciones típicas
STF12N60M2 es adecuado para 6 aplicacións: Switch-Mode Power Supplies (SMPS), Power Factor Correction (PFC), LED Lighting Drivers, Motor Control, Solar Inverters, Battery Chargers.
Switch-Mode Power Supplies (SMPS)
The STF12N60M2 is ideal for SMPS topologies like flyback and forward converters. Its 600V breakdown voltage handles the high voltage stress in offline power supplies, while the low on-resistance (0.38Ω) minimizes conduction losses. The low gate charge (25nC) enables fast switching, reducing switching losses and improving efficiency. In a typical flyback converter, the MOSFET is placed in series with the primary winding, switching at frequencies up to 100kHz. The TO-220FP package allows easy heatsinking, and the avalanche rating ensures robustness against voltage spikes. Compared to IGBTs, the MOSFET offers faster switching and lower losses at moderate frequencies, making it suitable for power supplies up to 150W.
Recomendado
Power Factor Correction (PFC)
In PFC circuits, the STF12N60M2 operates in boost converter topology to shape the input current waveform. Its high voltage rating (600V) is essential for handling the boosted output voltage (typically 400V). The low on-resistance reduces conduction losses, and the fast switching capability (low Qg) minimizes switching losses at high frequencies (50-100kHz). The device's avalanche ruggedness ensures reliability during transient conditions. In a typical PFC stage, the MOSFET is driven by a PFC controller like the L6562A, with a boost inductor and diode. The TO-220FP package with isolated tab simplifies mounting on a heatsink. The STF12N60M2's performance is comparable to competing devices, offering a good balance of efficiency and cost.
Recomendado
LED Lighting Drivers
The STF12N60M2 is well-suited for LED drivers, particularly in offline constant-current topologies. Its 600V rating allows direct connection to rectified mains (up to 265VAC), and the low on-resistance ensures high efficiency. The device can switch at high frequencies, enabling compact magnetic components. In a typical LED driver, the MOSFET is used in a flyback or buck-boost converter, controlled by an LED driver IC like the HV9910. The TO-220FP package provides thermal management for the power dissipation. The low gate charge simplifies the gate drive circuit, and the avalanche rating protects against inductive spikes from the transformer. This makes the STF12N60M2 a reliable choice for LED lighting applications.
Recomendado
Motor Control
In motor control applications, the STF12N60M2 can be used in the inverter stage of variable frequency drives (VFDs) for AC motors. Its 600V rating is suitable for 230VAC motor drives, and the low on-resistance reduces conduction losses. The fast body diode with low reverse recovery charge enables efficient operation in bridge configurations. The device's avalanche ruggedness ensures reliability during motor start/stop transients. In a typical VFD, the MOSFETs are arranged in a three-phase bridge, driven by a gate driver IC like the IR2110. The TO-220FP package allows easy mounting on a heatsink. The STF12N60M2's switching speed is adequate for PWM frequencies up to 20kHz, providing smooth motor control.
Recomendado
Solar Inverters
The STF12N60M2 is used in solar microinverters and string inverters for DC-AC conversion. Its 600V rating is suitable for the DC bus voltage in solar systems (up to 450V). The low on-resistance minimizes conduction losses, improving overall system efficiency. The fast switching capability reduces switching losses, especially in high-frequency topologies like flyback or push-pull. The device's avalanche rating ensures robustness against lightning-induced surges. In a typical microinverter, the MOSFET is used in a flyback converter to boost the panel voltage, followed by a full-bridge inverter. The TO-220FP package provides thermal management. The STF12N60M2's performance is comparable to other 600V MOSFETs, offering a cost-effective solution.
Recomendado
Battery Chargers
In battery chargers, the STF12N60M2 is used in the power stage of switch-mode chargers for electric vehicles, power tools, and portable devices. Its 600V rating allows direct connection to mains, and the low on-resistance ensures high charging efficiency. The fast switching capability reduces losses, enabling compact charger designs. In a typical charger, the MOSFET is used in a flyback or LLC resonant converter, controlled by a charger IC like the UC3842. The TO-220FP package allows heatsinking for high-power operation. The device's avalanche ruggedness protects against transients from the transformer. The STF12N60M2 is a reliable choice for battery charging applications.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para STF12N60M2 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | STF12N60M2-EP | IPP60R099P7 | FCP12N60 |
|---|---|---|---|---|
| Package | TO-220FP | TO-220FP | TO-220FP | TO-220FP |
| Brand | STMicroelectronics | STMicroelectronics | Infineon | onsemi |
| Drain-Source Voltage (VDS) | 600 V | 600 V | 600 V | 600 V |
| Continuous Drain Current (ID) at 25°C | 12 A | 12 A | 11 A | 12 A |
| On-Resistance (RDS(on)) | 0.38 Ω | 0.38 Ω | 0.099 Ω | 0.4 Ω |
| Gate Charge (Qg) | 25 nC | 25 nC | 30 nC | 28 nC |
| Avalanche Energy (EAS) | 400 mJ | 500 mJ | 300 mJ | 350 mJ |
| Power Dissipation (PD) | 45 W | 45 W | 35 W | 40 W |
Diferenciadores clave
- Low on-resistance of 0.38Ω (frente a FCP12N60)
- High avalanche energy of 400mJ (frente a IPP60R099P7)
- Lower gate charge of 25nC (frente a IPP60R099P7)
Notas de diseño
The STF12N60M2 has a junction-to-case thermal resistance of 3.5°C/W. For a power dissipation of 45W, the junction temperature rise is 157.5°C above case temperature. Ensure adequate heatsinking to keep the junction temperature below 150°C. Use thermal compound and a heatsink with a thermal resistance of less than 1°C/W for high-power operation.
For the TO-220FP package, ensure the tab is connected to the drain potential. If the tab is not isolated, use an insulating pad and a mica washer when mounting to a grounded heatsink. Keep the gate drive traces short and use a gate resistor (e.g., 10Ω) to reduce ringing. Place a 100nF ceramic capacitor close to the gate driver to supply fast switching currents.
Do not exceed the maximum gate-source voltage of ±25V, as this can damage the oxide layer. Ensure the gate drive voltage is at least 10V to fully enhance the channel and achieve the specified on-resistance. Also, avoid operating the device beyond the SOA limits, especially during avalanche events. Use a snubber circuit if the device is subjected to high dv/dt transients.
Información de cumplimiento
RoHS compliant per STMicroelectronics. Not AEC-Q100 qualified; for automotive, consider AEC-Q101 qualified parts.