STFU13N80K5 - 13A, 800V N-Channel Power MOSFET | STMicroelectronics
N.º de pieza: STFU13N80K5 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $2.85 | $2,85 |
| 10 | $2.56 | $25,60 |
| 100 | $2.28 | $228,00 |
| 500 | $2.05 | $1.025,00 |
| 1.000 | $1.82 | $1.820,00 |
STFU13N80K5 Descripción general
A Power MOSFET is a type of field-effect transistor designed to handle significant power levels. It operates by controlling the flow of current through a semiconductor channel using an electric field, enabling efficient switching and amplification. Power MOSFETs are fundamental building blocks in power electronics, serving as switches in power supplies, motor drives, and inverters. They are part of the broader category of discrete semiconductors, which also includes diodes, thyristors, and IGBTs.
Key features of the STFU13N80K5 include a low on-resistance (RDS(on)) of 0.29 ohm (typical) at VGS=10V, which minimizes conduction losses. The device offers a wide gate-source voltage range of ±30V and a total gate charge (Qg) of 38 nC, enabling fast switching. It also features an intrinsic body diode with a reverse recovery time of 330 ns, which is important for inductive load switching. The TO-220FP package has a thermal resistance of 3.5°C/W (junction-to-case), allowing efficient heat dissipation.
The MDmesh K5 technology utilizes a super-junction structure that reduces on-resistance while maintaining high breakdown voltage, achieving a good trade-off between conduction and switching losses. This makes the STFU13N80K5 ideal for applications requiring high efficiency and reliability, such as switch-mode power supplies (SMPS), power factor correction (PFC) circuits, and high-voltage DC-DC converters.
Typical applications include server power supplies, industrial power systems, LED lighting drivers, and solar inverters. The device's high voltage rating and low on-resistance make it particularly suited for 380V DC bus systems and universal input (85-265V AC) power supplies.
When designing with this MOSFET, ensure proper gate drive voltage (10V recommended) to achieve low on-resistance. The TO-220FP package requires a heatsink for high-power dissipation; consider the thermal impedance and airflow in your system. Also, implement appropriate snubber circuits or gate resistors to manage switching transients and EMI.
Alternativas directas para STFU13N80K5 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
STFU13N80K5
✅ Sustitución directa✓ En stock
$1.82 / unidad
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✅ Sustitución directa✓ En stock
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Ver hoja de datos →STFU13N80K5
✅ Sustitución directa✓ En stock
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Ver hoja de datos →STFU13N80K5
✅ Sustitución directa✓ En stock
$1.82 / unidad
Ver hoja de datos →STFU13N80K5
✅ Sustitución directa✓ En stock
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Ver hoja de datos →STFU13N80K5
✅ Sustitución directa✓ En stock
$1.82 / unidad
Ver hoja de datos →STFU13N80K5
✅ Sustitución directa✓ En stock
$1.82 / unidad
Ver hoja de datos →STFU13N80K5
✅ Sustitución directa✓ En stock
$1.82 / unidad
Ver hoja de datos →STFU13N80K5
✅ Sustitución directa✓ En stock
$1.82 / unidad
Ver hoja de datos →STFU13N80K5
✅ Sustitución directa✓ En stock
$1.82 / unidad
Ver hoja de datos →STFU13N80K5
✅ Sustitución directa✓ En stock
$1.82 / unidad
Ver hoja de datos →STFU13N80K5
✅ Sustitución directa✓ En stock
$1.82 / unidad
Ver hoja de datos →STFU13N80K5
✅ Sustitución directa✓ En stock
$1.82 / unidad
Ver hoja de datos →STFU13N80K5
✅ Sustitución directa✓ En stock
$1.82 / unidad
Ver hoja de datos →STFU13N80K5
✅ Sustitución directa✓ En stock
$1.82 / unidad
Ver hoja de datos →STFU13N80K5
✅ Sustitución directa✓ En stock
$1.82 / unidad
Ver hoja de datos →STFU13N80K5 Valores máximos y características eléctricas
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 800 V |
| Continuous Drain Current (ID) at 25°C | 13 A |
| Continuous Drain Current (ID) at 100°C | 8.2 A |
| Pulsed Drain Current (IDM) | 39 A |
| Gate-Source Voltage (VGS) | ±30 V |
| On-Resistance (RDS(on)) at VGS=10V | 0.29 ohm (typical) |
| Total Gate Charge (Qg) | 38 nC |
| Input Capacitance (Ciss) | 1100 pF |
| Output Capacitance (Coss) | 55 pF |
| Reverse Transfer Capacitance (Crss) | 3.5 pF |
| Body Diode Reverse Recovery Time (trr) | 330 ns |
| Power Dissipation (PD) at 25°C | 35 W |
| Rango de temperatura de funcionamiento | -55°C to +150°C |
| Encapsulado | TO-220FP (Full-Pack) |
| Tipo de montaje | Through Hole |
| Estado RoHS | Compliant |
Configuración de pines de STFU13N80K5
| Pin 1 | Gate — Gate drive input |
| Pin 2 | Drain — Drain connection |
| Pin 3 | Source — Source connection |
Área de funcionamiento seguro (DC)
Aplicaciones típicas
STFU13N80K5 es adecuado para 6 aplicacións: Switch-Mode Power Supplies (SMPS), Power Factor Correction (PFC), High-Voltage DC-DC Converters, LED Lighting Drivers, Solar Inverters, Industrial Power Supplies.
Switch-Mode Power Supplies (SMPS)
The STFU13N80K5 is ideal for SMPS due to its 800V breakdown voltage and low on-resistance. In a typical flyback converter, the MOSFET switches at high frequency to transfer energy from primary to secondary. Its low gate charge (38 nC) enables fast switching, reducing switching losses. The TO-220FP package allows easy heatsinking, and the device can handle the high voltage spikes present in flyback topologies. Compared to IGBTs, the MOSFET offers faster switching and lower conduction losses at moderate power levels, improving overall efficiency.
Recomendado
Power Factor Correction (PFC)
In boost PFC circuits, the STFU13N80K5 operates at high voltage (up to 800V) and high frequency. Its low RDS(on) of 0.29 ohm minimizes conduction losses, while the fast body diode (trr=330 ns) reduces reverse recovery losses. The device's high dV/dt capability ensures reliable operation in continuous conduction mode. The TO-220FP package simplifies thermal management, allowing the MOSFET to dissipate up to 35W. This makes it suitable for PFC stages in server power supplies and industrial drives, where high efficiency and power density are critical.
Recomendado
High-Voltage DC-DC Converters
The STFU13N80K5 is well-suited for high-voltage DC-DC converters, such as those used in telecom and industrial applications. Its 800V rating provides ample margin for input voltages up to 400V DC. The low gate charge enables high-frequency operation, reducing transformer size. The device's low on-resistance ensures high efficiency, and the TO-220FP package allows for easy mounting on heatsinks. In a full-bridge topology, the MOSFET's fast body diode helps manage dead-time losses, improving reliability.
Recomendado
LED Lighting Drivers
For LED drivers, the STFU13N80K5 provides efficient switching in flyback or buck-boost topologies. Its high voltage rating (800V) allows direct operation from rectified AC mains (up to 265V AC). The low on-resistance reduces power loss, improving overall driver efficiency. The device's fast switching minimizes EMI, which is important for lighting applications. The TO-220FP package is easy to mount on a heatsink, ensuring reliable thermal performance in enclosed luminaires.
Recomendado
Solar Inverters
In solar inverters, the STFU13N80K5 is used in boost converters to step up the PV panel voltage to a high-voltage DC bus. Its 800V rating handles the high voltage, while the low on-resistance minimizes losses, improving the inverter's efficiency. The device's fast switching reduces switching losses, and the TO-220FP package allows for effective heatsinking. The MOSFET's ruggedness ensures reliable operation in outdoor environments with wide temperature variations.
Recomendado
Industrial Power Supplies
The STFU13N80K5 is suitable for industrial power supplies requiring high reliability and efficiency. Its 800V rating provides a safety margin for voltage transients in industrial environments. The low on-resistance and fast switching reduce power losses, improving efficiency and reducing cooling requirements. The TO-220FP package is robust and easy to mount, making it suitable for harsh conditions. The device's wide operating temperature range (-55°C to +150°C) ensures reliable operation in extreme environments.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para STFU13N80K5 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | STF13N80K5 | IPP60R099CP | FCP13N80 |
|---|---|---|---|---|
| Package | TO-220FP | TO-220 | TO-220 | TO-220 |
| Brand | STMicroelectronics | STMicroelectronics | Infineon | onsemi |
| VDS (V) | 800 | 800 | 600 | 800 |
| ID at 25°C (A) | 13 | 13 | 11 | 13 |
| RDS(on) (ohm) | 0.29 | 0.29 | 0.099 | 0.29 |
| Qg (nC) | 38 | 38 | 45 | 40 |
| PD (W) | 35 | 35 | 35 | 35 |
| Package Isolation | Isolated tab | Non-isolated tab | Non-isolated tab | Non-isolated tab |
Diferenciadores clave
- Isolated TO-220FP package (frente a STF13N80K5 (TO-220))
- Higher voltage rating than some competitors (frente a IPP60R099CP (600V))
- Lower on-resistance than typical 800V MOSFETs (frente a FCP13N80 (0.29 ohm))
Notas de diseño
The STFU13N80K5 in TO-220FP package has a junction-to-case thermal resistance of 3.5°C/W. At 35W dissipation, the junction temperature rise is 122.5°C above case temperature. Ensure adequate heatsinking to keep the junction below 150°C. Use thermal compound and a proper heatsink with sufficient surface area and airflow.
For the TO-220FP package, the tab is isolated, so no additional insulation is needed when mounting to a heatsink. However, ensure the gate drive traces are short and direct to minimize parasitic inductance. Place a gate resistor (typically 10-100 ohm) close to the gate pin to dampen oscillations. Use a low-ESR ceramic capacitor (e.g., 100nF) near the drain for high-frequency decoupling.
Do not exceed the maximum gate-source voltage of ±30V. Use a gate driver with appropriate voltage clamping if necessary. Also, ensure the drain-source voltage does not exceed 800V, especially during switching transients. Implement a snubber circuit (RCD or RC) across the drain-source to limit voltage spikes caused by leakage inductance in flyback transformers.
Información de cumplimiento
RoHS compliant per STMicroelectronics. Not AEC-Q100 qualified. Halogen-free status not specified in available data.
