STI34N60DM2 - 34A, 600V N-Channel MDmesh DM2 Power MOSFET | STMicroelectronics
N.º de pieza: STI34N60DM2 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $3.42 | $3,42 |
| 10 | $3.08 | $30,80 |
| 100 | $2.74 | $274,00 |
| 500 | $2.46 | $1.230,00 |
| 1.000 | $2.19 | $2.190,00 |
STI34N60DM2 Descripción general
A Power MOSFET is a type of field-effect transistor optimized for switching and amplification in power electronics. It operates by controlling the conductivity between the drain and source terminals through an insulated gate voltage. Power MOSFETs are essential components in switch-mode power supplies (SMPS), DC-DC converters, motor drives, and lighting systems, where efficient high-voltage switching is required. They are part of the broader family of discrete semiconductors, which also includes diodes, thyristors, and IGBTs, each serving distinct roles in power management.
Key features of the STI34N60DM2 include a low typical on-resistance (RDS(on)) of 0.099 ohm at 10V gate drive, a high avalanche ruggedness, and a fast body diode. The device offers a wide operating junction temperature range from -55°C to +150°C, ensuring reliability in harsh environments. Its gate charge is optimized for efficient high-frequency operation, and it is RoHS compliant, meeting environmental standards.
Technically, the MDmesh DM2 series employs a vertical structure with a deep trench gate, which reduces the on-resistance and gate charge compared to conventional planar MOSFETs. This results in lower conduction and switching losses, improving overall system efficiency. The device also features an intrinsic body diode with low reverse recovery charge, beneficial for bridge topologies.
Typical applications include switch-mode power supplies for industrial and consumer electronics, DC-DC converters, motor control circuits, and power factor correction (PFC) stages. The high voltage rating and current capability make it suitable for 400V and 600V bus systems.
When designing with this MOSFET, ensure proper gate drive voltage (typically 10V) to achieve minimum on-resistance. Consider thermal management by providing adequate PCB copper area or a heatsink, as power dissipation can be significant at high currents. Also, implement snubber circuits or use the device's avalanche capability to handle inductive spikes.
Alternativas directas para STI34N60DM2 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
STI34N60DM2-1
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
IPW60R099CP
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
FCP34N60N
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
TK34N60X
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
STI34N60DM2 Valores máximos y características eléctricas
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID) at 25°C | 34 A |
| Continuous Drain Current (ID) at 100°C | 21 A |
| Pulsed Drain Current (IDM) | 136 A |
| Gate-Source Voltage (VGS) | ±25 V |
| On-Resistance (RDS(on)) at VGS=10V | 0.099 ohm (typical) |
| Total Gate Charge (Qg) | 68 nC (typical) |
| Input Capacitance (Ciss) | 2300 pF (typical) |
| Output Capacitance (Coss) | 120 pF (typical) |
| Reverse Transfer Capacitance (Crss) | 5 pF (typical) |
| Power Dissipation (PD) at 25°C | 250 W |
| Operating Junction Temperature (Tj) | -55°C to +150°C |
| Encapsulado | TO-262 (I2PAK) |
| Tipo de montaje | Through Hole |
| Estado RoHS | Compliant |
Configuración de pines de STI34N60DM2
| Pin 1 | Gate — Gate terminal for controlling the MOSFET |
| Pin 2 | Drain — Drain terminal, connected to the heatsink tab |
| Pin 3 | Source — Source terminal |
Área de funcionamiento seguro (DC)
Aplicaciones típicas
STI34N60DM2 es adecuado para 6 aplicacións: Switch-Mode Power Supplies (SMPS), DC-DC Converters, Motor Control, Power Factor Correction (PFC), Lighting (HID and LED), Solar Inverters.
Switch-Mode Power Supplies (SMPS)
The STI34N60DM2 is ideal for SMPS due to its 600V breakdown voltage and low on-resistance (0.099 ohm), which minimize conduction losses. In a typical flyback or forward converter, the MOSFET switches at high frequency (e.g., 100 kHz), and its low gate charge (68 nC) reduces switching losses. The device can handle the high voltage spikes from the transformer's leakage inductance, thanks to its avalanche ruggedness. For a 500W SMPS, the MOSFET dissipates approximately 10W at full load, requiring a heatsink with thermal resistance below 12°C/W to keep junction temperature below 125°C. Compared to IGBTs, the MOSFET offers faster switching and lower losses at frequencies above 50 kHz, making it the preferred choice for efficient power conversion.
Recomendado
DC-DC Converters
In DC-DC converters, the STI34N60DM2 serves as the main switching element in topologies like boost, buck, and full-bridge. Its 600V rating allows operation from high input voltages (e.g., 400V from PFC stage) down to lower output voltages. The low on-resistance ensures high efficiency, especially at high duty cycles. For a 1kW boost converter, the MOSFET conducts an average current of 2.5A, resulting in conduction losses of about 0.6W (I^2*R). Switching losses are minimized by the low gate charge and fast body diode. The device's thermal performance is critical; with a power dissipation of 20W, a heatsink with thermal resistance of 5°C/W is needed to maintain junction temperature below 150°C. The STI34N60DM2's ruggedness ensures reliable operation under load transients.
Recomendado
Motor Control
The STI34N60DM2 is well-suited for motor control applications, including variable frequency drives (VFDs) and brushless DC (BLDC) motor controllers. Its 600V rating accommodates the back-EMF spikes from inductive motor windings, while the 34A current capability handles the inrush and stall currents. The low on-resistance reduces heat generation, and the fast switching enables high PWM frequencies (e.g., 20 kHz) for smooth motor operation. In a 3-phase inverter for a 2kW motor, each MOSFET conducts an average current of 5A, dissipating about 2.5W per device. Proper gate drive (e.g., 10V) and snubber circuits are recommended to manage voltage transients. The device's avalanche ruggedness provides robustness against inductive load switching.
Recomendado
Power Factor Correction (PFC)
In PFC circuits, the STI34N60DM2 is used in boost converters to shape the input current waveform and improve power factor. Its 600V rating is essential for handling the boosted output voltage (typically 400V). The low on-resistance and fast switching reduce losses, enabling high efficiency (e.g., >95%). For a 1kW PFC stage, the MOSFET switches at 100 kHz, and the average current is 2.5A. The device's low gate charge (68 nC) simplifies the gate drive design. Thermal management is crucial; with a power dissipation of 15W, a heatsink with thermal resistance of 8°C/W is required. The STI34N60DM2's ruggedness ensures reliable operation under line voltage variations.
Recomendado
Lighting (HID and LED)
The STI34N60DM2 can be used in high-intensity discharge (HID) lamp ballasts and high-power LED drivers. Its 600V rating is suitable for the high voltage required to ignite HID lamps, and the 34A current capability supports high-power LED strings. The low on-resistance minimizes losses, and the fast switching enables efficient PWM dimming. In an LED driver for a 200W streetlight, the MOSFET operates at 100 kHz, conducting an average current of 1A. The device's thermal performance is important; with a power dissipation of 5W, a small heatsink or adequate PCB copper is sufficient. The STI34N60DM2's ruggedness ensures long-term reliability in outdoor environments.
Recomendado
Solar Inverters
In solar inverters, the STI34N60DM2 is used in DC-AC conversion stages. Its 600V rating is suitable for the high DC bus voltage (e.g., 400V) from solar panels, and the 34A current capability handles the output power. The low on-resistance and fast switching improve inverter efficiency, which is critical for maximizing energy harvest. For a 3kW inverter, the MOSFET switches at 20 kHz, conducting an average current of 8A. The device's thermal performance is crucial; with a power dissipation of 20W, a heatsink with thermal resistance of 5°C/W is needed. The STI34N60DM2's ruggedness ensures reliable operation under varying solar irradiance.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para STI34N60DM2 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | STI34N60DM2-1 | STB34N60DM2 | IPW60R099CP | FCP34N60N | TK34N60X |
|---|---|---|---|---|---|---|
| Package | TO-262 (I2PAK) | TO-262 (I2PAK) - same | D2PAK (TO-263) - different | TO-262 (I2PAK) - same | TO-262 (I2PAK) - same | TO-262 (I2PAK) - same |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics | Infineon | onsemi | Toshiba |
| Drain-Source Voltage (VDS) | 600 V | 600 V | 600 V | 600 V | 600 V | 600 V |
| Continuous Drain Current (ID) at 25°C | 34 A | 34 A | 34 A | 31 A | 34 A | 34 A |
| On-Resistance (RDS(on)) | 0.099 ohm | 0.099 ohm | 0.099 ohm | 0.099 ohm | 0.099 ohm | 0.099 ohm |
| Total Gate Charge (Qg) | 68 nC | 68 nC | 68 nC | 65 nC | 70 nC | 72 nC |
| Power Dissipation (PD) | 250 W | 250 W | 250 W | 255 W | 250 W | 250 W |
| Operating Temperature Range | -55°C to +150°C | -55°C to +150°C | -55°C to +150°C | -55°C to +150°C | -55°C to +150°C | -55°C to +150°C |
Diferenciadores clave
- Low on-resistance of 0.099 ohm (frente a IPW60R099CP)
- High current capability of 34A (frente a TK34N60X)
- Same-brand package variant (frente a STB34N60DM2)
Notas de diseño
The STI34N60DM2 can dissipate up to 250W at 25°C case temperature. In a typical SMPS application with 10W dissipation, a heatsink with thermal resistance below 12°C/W is required to keep the junction temperature below 125°C. Ensure the heatsink is properly attached to the metal tab (drain) for effective heat transfer. For higher power dissipation, consider forced air cooling or a larger heatsink.
For through-hole mounting, ensure the leads are soldered with adequate solder fillets. The drain tab is electrically connected to the drain, so it may require isolation from other circuit nodes. Use a thermal pad or insulator if the heatsink is shared with other components. Keep the gate drive traces short to minimize inductance and ringing.
Do not exceed the maximum gate-source voltage of ±25V. Use a gate driver that provides a 10V gate drive to achieve minimum on-resistance. Implement a snubber circuit or use the device's avalanche capability to handle inductive spikes. Ensure the junction temperature does not exceed 150°C under any operating condition.
Información de cumplimiento
RoHS compliant per STMicroelectronics product page. Other compliance details not provided in the verified data.
