STU16N65M5 - 650V N-Channel Power MOSFET | STMicroelectronics
N.º de pieza: STU16N65M5 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $1.85 | $1,85 |
| 10 | $1.65 | $16,50 |
| 100 | $1.45 | $145,00 |
| 500 | $1.3 | $650,00 |
| 1.000 | $1.2 | $1.200,00 |
STU16N65M5 Descripción general
A Power MOSFET is a type of field-effect transistor optimized for switching and amplification of power. It operates by controlling the conductivity between the drain and source terminals through an insulated gate, allowing efficient switching at high voltages and currents. Power MOSFETs are fundamental building blocks in power electronics, serving as switches in DC-DC converters, AC-DC power supplies, motor drives, and lighting systems. They are part of the broader category of discrete semiconductors, which also includes diodes, thyristors, and IGBTs, each tailored for specific power handling and switching requirements.
Key features of the STU16N65M5 include a very low gate charge (Qg) of 38 nC (typical), which enables fast switching and reduces driver losses, and a high dv/dt capability for robust performance in hard-switching topologies. The device also offers a wide operating junction temperature range from -55°C to +150°C, ensuring reliability in harsh environments. Its avalanche ruggedness is rated at 400 mJ (single pulse), making it suitable for applications where inductive loads may cause voltage spikes.
Technically, the MDmesh M5 series utilizes a proprietary strip layout technology that reduces on-resistance and gate charge simultaneously, achieving a figure of merit (RDS(on) x Qg) that is among the best in its class. This technology enhances the device's efficiency in high-frequency switching applications, where both conduction and switching losses are critical. The STU16N65M5 also features a built-in diode with fast recovery characteristics, reducing reverse recovery losses in bridge topologies.
Typical applications include switch-mode power supplies (SMPS) for consumer and industrial electronics, power factor correction (PFC) circuits, LED lighting drivers, and solar inverters. Its 650V rating provides ample margin for universal input (85-265V AC) power supplies, while the low on-resistance ensures high efficiency in continuous conduction mode.
When designing with the STU16N65M5, ensure proper gate drive voltage (typically 10V) to fully enhance the channel and minimize on-resistance. A gate resistor may be needed to control switching speed and reduce EMI. Thermal management is crucial: the IPAK package's tab should be soldered to a sufficient copper area or heatsink to dissipate heat, especially at high currents. Always consider the device's SOA (Safe Operating Area) and avalanche ratings when designing for inductive loads.
Alternativas directas para STU16N65M5 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
STU12N65M5
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
STU20N65M5
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
STU16N65M5-AG
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
STU16N65M5 Valores máximos y características eléctricas
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 650 V |
| Continuous Drain Current (ID) at 25°C | 16 A |
| Continuous Drain Current (ID) at 100°C | 10 A |
| Pulsed Drain Current (IDM) | 64 A |
| On-Resistance (RDS(on)) typical | 0.29 ohm |
| Gate-Source Voltage (VGS) | ±25 V |
| Gate Charge (Qg) typical | 38 nC |
| Input Capacitance (Ciss) typical | 1100 pF |
| Output Capacitance (Coss) typical | 90 pF |
| Reverse Transfer Capacitance (Crss) typical | 4 pF |
| Avalanche Energy (EAS) single pulse | 400 mJ |
| Rango de temperatura de unión de funcionamiento | -55°C to +150°C |
| Encapsulado | IPAK (TO-251) |
| Tipo de montaje | Through Hole |
| Estado RoHS | Compliant |
Configuración de pines de STU16N65M5
| Pin 1 | Gate — Gate terminal for controlling the MOSFET |
| Pin 2 | Drain — Drain terminal, connected to the metal tab |
| Pin 3 | Source — Source terminal |
Área de funcionamiento seguro
Aplicaciones típicas
STU16N65M5 es adecuado para 6 aplicacións: Switch-Mode Power Supplies (SMPS), Power Factor Correction (PFC), LED Lighting Drivers, Solar Inverters, Industrial Power Supplies, Motor Drives.
Switch-Mode Power Supplies (SMPS)
The STU16N65M5 is ideal for SMPS due to its 650V rating and low on-resistance, enabling high efficiency in flyback and forward converters. Its low gate charge reduces switching losses, allowing operation at higher frequencies with smaller magnetic components. In a typical 100W SMPS, the MOSFET switches at 100kHz, and the low RDS(on) minimizes conduction losses, improving overall efficiency by up to 2% compared to higher-resistance devices. The IPAK package's thermal tab must be connected to a heatsink or large copper area to dissipate heat from continuous operation. The device's avalanche ruggedness ensures reliability during load transients and short-circuit conditions.
Recomendado
Power Factor Correction (PFC)
In PFC circuits, the STU16N65M5 operates in continuous conduction mode (CCM) to shape the input current waveform. Its low gate charge (38 nC) and fast switching speed enable high-frequency operation (typically 100-200kHz), reducing the size of the boost inductor. The 650V rating provides sufficient margin for the boosted output voltage (typically 400V). The low on-resistance minimizes conduction losses, which is critical for meeting efficiency standards like 80 PLUS. The device's fast body diode reduces reverse recovery losses, improving overall PFC efficiency. Proper gate drive and snubber circuits are recommended to manage dv/dt and EMI.
Recomendado
LED Lighting Drivers
The STU16N65M5 is well-suited for LED drivers, particularly in offline applications where high voltage and efficiency are required. Its 650V rating allows direct connection to rectified mains (up to 400V DC), and the low on-resistance ensures minimal power loss, which is essential for maintaining high efficiency in LED lighting. The device can be used in single-stage PFC flyback topologies, where its fast switching reduces EMI and improves dimming performance. The IPAK package is compact, making it suitable for space-constrained LED bulb designs. Thermal management is critical; the tab should be soldered to a large copper pad to dissipate heat effectively.
Recomendado
Solar Inverters
In solar inverters, the STU16N65M5 is used in DC-DC boost converters and inverter stages. Its 650V rating is suitable for photovoltaic panel voltages up to 600V, and the low on-resistance reduces conduction losses, improving the overall efficiency of the inverter. The device's fast switching capability enables high-frequency PWM, which reduces the size of magnetic components and improves power density. The avalanche ruggedness ensures reliability during grid disturbances and lightning-induced surges. For microinverters, the IPAK package's compact size is advantageous, but thermal management is essential to handle the continuous power dissipation.
Recomendado
Industrial Power Supplies
The STU16N65M5 is used in industrial power supplies for automation and control systems, where reliability and efficiency are paramount. Its 650V rating provides a safety margin for 3-phase industrial mains (up to 480V AC), and the low on-resistance ensures high efficiency in continuous operation. The device's wide junction temperature range (-55°C to +150°C) makes it suitable for harsh industrial environments. The IPAK package is easy to mount on PCBs with through-hole soldering, and the metal tab can be attached to a heatsink for thermal management. The device's avalanche capability protects against voltage spikes from inductive loads.
Recomendado
Motor Drives
In motor drives, the STU16N65M5 can be used in the inverter stage to drive AC motors. Its 650V rating is suitable for 230V AC motor drives, and the low on-resistance minimizes conduction losses, improving efficiency. The device's fast switching speed enables high-frequency PWM, which reduces motor noise and improves control accuracy. The avalanche ruggedness ensures reliability during motor start/stop transients. For three-phase motor drives, three half-bridge circuits using six MOSFETs are typical; the IPAK package is suitable for low-power drives, but for higher power, consider TO-220 or DPAK packages with better thermal performance.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para STU16N65M5 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | STU12N65M5 | STU20N65M5 | STU16N65M5-AG | IPD16N65S5-30 | FDP16N65 |
|---|---|---|---|---|---|---|
| Package | IPAK (TO-251) | IPAK (TO-251) - same | IPAK (TO-251) - same | IPAK (TO-251) - same | DPAK (TO-252) - different | TO-220 - different |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics | Infineon | onsemi |
| Drain-Source Voltage (VDS) | 650 V | 650 V | 650 V | 650 V | 650 V | 650 V |
| Continuous Drain Current (ID) at 25°C | 16 A | 12 A | 20 A | 16 A | 16 A | 16 A |
| On-Resistance (RDS(on)) typical | 0.29 ohm | 0.38 ohm | 0.22 ohm | 0.29 ohm | 0.30 ohm | 0.32 ohm |
| Gate Charge (Qg) typical | 38 nC | 30 nC | 45 nC | 38 nC | 40 nC | 42 nC |
| Avalanche Energy (EAS) | 400 mJ | 300 mJ | 500 mJ | 400 mJ | 350 mJ | 380 mJ |
| Automotive Grade | No | No | No | Yes (AEC-Q101) | No | No |
Diferenciadores clave
- Low on-resistance of 0.29 ohm (frente a STU12N65M5)
- Higher current rating of 16A (frente a STU12N65M5)
- Automotive grade option available (frente a STU16N65M5-AG)
Notas de diseño
The STU16N65M5 in IPAK package has a thermal resistance from junction to case (RthJC) of approximately 2.5°C/W (refer to datasheet for exact value). At 16A and 0.29 ohm, power dissipation is about 74W, which would cause a junction temperature rise of 185°C above case temperature. Therefore, a heatsink is mandatory for continuous operation at high currents. Ensure the metal tab is soldered to a large copper area or attached to a heatsink with proper thermal interface material.
For the IPAK package, the drain tab is the metal tab, which is electrically connected to the drain. When designing the PCB, ensure adequate copper area for the drain connection to aid heat dissipation. Place the gate driver as close as possible to the gate pin to minimize parasitic inductance. Use a gate resistor (typically 10-100 ohm) to control switching speed and reduce EMI. Add a 100nF ceramic capacitor between gate and source to prevent false turn-on due to dv/dt.
Do not exceed the maximum gate-source voltage of ±25V, as this can damage the oxide layer. Ensure the gate drive voltage is at least 10V to fully enhance the channel and achieve the specified on-resistance. When switching inductive loads, always consider the avalanche rating; the STU16N65M5 can handle 400mJ single pulse, but repetitive avalanche events can reduce reliability. Use a snubber circuit or freewheeling diode to protect the device from voltage spikes.
Información de cumplimiento
RoHS compliant per STMicroelectronics product page. Not AEC-Q100 qualified; automotive grade available as STU16N65M5-AG.
