Pilotes de MOSFET de puissance
Produits (714)
LM73100RPWR - 5.5A Ideal Diode Load Switch, 2.7-23V, VQFN-HR-10 | TI
The Texas Instruments LM73100RPWR is a 2.7 V to 23 V, 5.5 A integrated ideal diode / load switch with an on-resistance of 28 mOhm (typical), housed in a 10-pin VQFN-HR (RPW) package measuring 2 mm x 2 mm. The device integrates an N-channel MOSFET, an ideal-diode controller for reverse-current blocking, and a comprehensive set of protection features including overvoltage, overcurrent, and short-circuit protection, plus thermal shutdown. What is an ideal diode? An ideal diode is an active circuit that emulates a forward-biased rectifier using a MOSFET and a control loop, achieving much lower forward voltage drop than a Schottky diode while also providing reverse-current blocking. Ideal diodes belong to the broader ORing controller / power-path protection category within power management ICs, and they are widely used in N+1 redundant supply architectures, battery backup systems, and USB Type-C power delivery paths where minimizing conduction loss and heat is critical. Key features of the LM73100RPWR include 28 mOhm Rds(on) (typ), 5.5 A continuous load current capability, an analog current monitor output (IMON) for accurate load-current sensing, input reverse-polarity protection, overvoltage lockout, inrush-current control with adjustable slew rate, and an operating junction temperature range of -40C to +125C. The HotRod QFN package provides low parasitic inductance and improved thermal performance versus conventional wire-bonded QFN packages of similar size. The architecture combines a charge-pump-driven N-channel pass FET with a fast ideal-diode control loop that responds to reverse current within microseconds. The current-monitor pin produces an analog current proportional to the load current, enabling closed-loop power budgeting, fault telemetry, and system health monitoring without a discrete sense resistor. Internal diagnostics include thermal warning, fault flag output, and load-fault timer. Typical applications include USB Type-C Power Delivery (PD) power-path switching in laptops and tablets, N+1 redundant power supply ORing, battery backup systems in industrial and telecom equipment, eFuse / hot-swap circuits in enterprise servers, and high-side load switching with reverse-polarity protection in factory automation modules. When designing with this part, place input and output bulk capacitors close to the VIN and VOUT pins to minimize ringing. Use the ILIM resistor to set the fast-trip threshold and the dVdt capacitor to control the inrush slew rate, both per the datasheet typical-application circuit. For 5 A continuous operation, provide at least 100 mm^2 of copper pour on the RPW thermal pad to keep the junction below 125C. This page synthesizes distributor pricing, drop-in alternatives in the same VQFN-HR-10 footprint, and practical layout and protection guidance drawn from the manufacturer datasheet - information not consolidated on a single distributor page.
LM74502DDFR - 65V RPP & Load Switch Controller | TI
The Texas Instruments LM74502DDFR is a low-IQ high-side switch controller with reverse polarity protection (RPP) and overvoltage protection, operating from a 3.2 V to 65 V supply input in an 8-pin TSOT-23-8 (DDF) surface-mount package. A reverse polarity protection controller governs external N-channel MOSFETs to block reversed or negative supply conditions while adding near-zero series resistance. Within the power-management hierarchy (RPP controller -> high-side controller -> power management IC), it replaces lossy series Schottky diodes, cutting conduction losses from hundreds of milliwatts to a few milliwatts. The back-to-back MOSFET arrangement also enables full load disconnect for safety-critical power paths. Key features include the wide 3.2 V to 65 V industrial operating range that covers 12 V, 24 V, and 48 V DC buses, low quiescent current for always-on systems, integrated overvoltage protection (OVP) with programmable threshold, and an ultra-small TSOT-23-8 footprint. The controller drives common-source N-FET pairs, giving designers freedom to scale current rating through MOSFET selection rather than changing the controller. Architecturally, the LM74502 uses an internal charge pump to enhance the external gate drivers above the source rail, keeping RDS(on) low during forward conduction and pulling the gate down quickly on reverse or overvoltage events. Precision comparators monitor input and output voltage to distinguish normal transients from fault conditions, asserting load disconnect only when required to minimize nuisance trips. Typical applications include 12 V and 24 V industrial power supplies, 48 V telecom and PoE front ends, automotive-adjacent industrial loads, and battery-input systems where reverse battery insertion must not destroy downstream circuitry. DigiKey classifies the device under OR Controllers/Ideal Diodes, reflecting its diode-replacement role. Design-wise, size the external FETs for both continuous current and the SOA during turn-off of a faulted supply, and keep gate-drive loops short. Verify that the OVP resistor divider tolerates the full transient rating of the bus. This page adds distributor pricing, drop-in alternative cross-references, and practical design notes synthesized beyond the TI datasheet.
LMG2104R022 - 100V 2.2mΩ GaN Half-Bridge Power Stage | TI
The Texas Instruments LMG2104R022 is a 100 V, 2.2 mΩ half-bridge GaN power stage with an integrated gate driver and built-in protection, supplied in a 4.5 mm × 7.0 mm QFN-18 (VBNR) package. It combines two enhancement-mode gallium nitride (GaN) FETs and a smart gate-driver IC into one compact module, delivering the low-loss switching, high slew-rate control, and protection features expected of a modern GaN integration. A GaN half-bridge power stage is an integrated circuit (IC) that contains the two power transistors (high-side and low-side) plus their driver circuitry in a single package. GaN FETs offer lower switching losses, lower gate charge, and zero reverse-recovery charge compared with silicon MOSFETs, making the device category - the GaN power stage - especially attractive for high-frequency, high-density DC-DC converters, Class-D audio amplifiers, and motor drives. Key features of the LMG2104R022 include a 2.2 mΩ typical on-resistance, 100 V drain-to-source rating, integrated bootstrap diode, under-voltage lockout (UVLO), over-current protection, and overtemperature protection. The smart switching features reduce EMI through controlled dV/dt and minimize dead time, which raises efficiency and shrinks the magnetics bill of materials in switched-mode power supply (SMPS) designs. Architecturally, the half-bridge topology is implemented with a high-side GaN FET and a low-side GaN FET, both e-mode (normally-off) devices. The silicon gate driver accepts low-voltage CMOS inputs and generates the rail-to-rail gate signals required to fully enhance the GaN transistors. Integrated dead-time control prevents shoot-through, while the on-package exposed pad provides a low thermal-resistance path to PCB copper. Typical applications include 48 V telecom and server point-of-load (POL) converters, industrial buck and buck-boost converters, Class-D audio amplifiers, BLDC motor drives, and USB-PD power adapters. The 100 V rating tolerates wide-input telecom rails as well as 24 V industrial buses. When designing with this part, ensure that the bootstrap capacitor and high-side bypass capacitor follow the manufacturer layout guidance in the datasheet. Keep the switching-node loop area minimal to avoid parasitic ringing - the integrated driver is designed to suppress most of it, but PCB layout discipline is still essential. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
LMG2104R044 - 100V 4.4mΩ GaN Half-Bridge Power Stage | TI
The Texas Instruments LMG2104R044 is a 100 V, 4.4 mΩ half-bridge GaN power stage with an integrated gate driver, integrated bootstrap, and enhanced protection features, supplied in a 5 mm x 4 mm QFN package. It combines two enhancement-mode GaN FETs (high-side and low-side) with the driver circuitry needed to switch them cleanly at high frequency, providing up to 100 V drain-to-source blocking and a typical on-resistance of 4.4 mΩ per FET at room temperature. A GaN (Gallium Nitride) half-bridge power stage is a fully integrated switching building block that places two GaN transistors and their gate drive on one substrate. Compared to discrete Si MOSFET half-bridges, GaN devices offer much lower switching loss, lower gate charge, and zero reverse-recovery charge, allowing converters to switch at 1 MHz and above. The half-bridge power stage sits in the broader power electronics hierarchy as: GaN FET -> GaN half-bridge -> power stage -> DC-DC converter / motor driver / class-D amplifier. The LMG2104R044 also integrates protection and a proprietary bootstrap regulator, simplifying the high-side gate-drive design that normally requires an external bootstrap diode and bias supply. Key specifications include 100 V drain-source blocking voltage, 4.4 mΩ typical Rds(on), integrated half-bridge topology, TTL-compatible 3.3 V / 5 V logic inputs, integrated bootstrap voltage regulator, and smart switching features. Smart-switching technology auto-tunes dead-time to minimize body-diode conduction and prevents simultaneous turn-on of both FETs, increasing efficiency and reducing EMI. The device operates from a single supply and supports high-side and low-side PWM inputs with internal level shifting. The LMG2104R044 uses TI's enhancement-mode GaN-on-Si process and integrates the gate driver close to the die to minimize parasitic loop inductance. A proprietary bootstrap voltage control regulates the high-side gate within the safe operating range regardless of VCC level. Internal protection features include undervoltage lockout on both VCC and the bootstrap rail, thermal shutdown, and short-circuit / overcurrent protection that de-glitches the gate driver when excessive current is detected. Typical applications include 48 V to point-of-load DC-DC converters, class-D audio amplifiers, motor drives, telecom brick converters, and high-density synchronous rectification. The integrated driver and protection features significantly reduce PCB area versus equivalent discrete half-bridge implementations. When designing with the LMG2104R044, place input ceramic bypass capacitors as close as possible to the power and signal pins to minimize high-frequency loop inductance. The exposed pad must be soldered to a sufficiently large copper pour for thermal relief - GaN power stages can switch at MHz frequencies and dissipate meaningful conduction loss at high currents. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
LMG2652H - 650V 140mΩ GaN Half-Bridge With Integrated Driver | TI
The Texas Instruments LMG2652H is a 650V 140mΩ GaN power-FET half bridge with integrated gate drivers, bootstrap FET, and high-side gate-drive level shifter in a 6mm x 8mm QFN package. It delivers integrated current-sense emulation, low-side and high-side gate drive, and a smart-switched GaN bootstrap FET with no diode forward-voltage drop and zero reverse-recovery charge. The device targets switch-mode power supplies up to 650V with simplified PCB layout. A GaN (Gallium Nitride) half-bridge power stage is a type of integrated power semiconductor that combines two enhancement-mode GaN FETs in a half-bridge configuration with all necessary drive, level-shifting, and bootstrap support. Within the broader hierarchy of power electronics, GaN half-bridges sit between discrete GaN FETs + external driver ICs and fully integrated digital point-of-load (POL) modules, offering a compact and high-efficiency building block for high-voltage converters. Key features include a 650V drain-to-source rating, 140mΩ on-resistance per FET, support for converter light-load efficiency and burst-mode operation with low quiescent current, and fast start-up times. The integrated current-sense emulation eliminates the need for an external current-sense resistor or current transformer on the low side, reducing BOM count and power loss. The smart bootstrap switch avoids overcharging of the high-side supply during transients and removes the conventional bootstrap diode forward drop. The LMG2652H combines 650V GaN technology with TI's integrated driver IP to achieve faster switching edges, lower switching losses, and smaller magnetics compared with silicon MOSFET half bridges. The architecture is designed for hard-switched and soft-switched topologies including active-clamp flyback, totem-pole PFC, and high-frequency isolated DC-DC converters. The 6mm x 8mm QFN package has an exposed thermal pad enabling direct PCB cooling without an external heatsink at moderate power levels. Typical applications include switch-mode power supplies, USB-PD and laptop adapters, telecom and server AC-DC front ends, telecom DC-DC converters, and Class-D audio amplifiers. The 650V rating and high switching frequency capability make this device especially attractive for totem-pole PFC and active-clamp flyback designs where synchronous rectification and high efficiency are required. When designing with the LMG2652H, ensure the PCB layout minimizes high-side gate-drive loop inductance and places the bootstrap capacitor close to the BST pin. Confirm that peak switching node dV/dt stays within the device rating during dead-time transitions, and observe the recommended UVLO and start-up sequencing from the LMG2652H datasheet to avoid unwanted half-bridge shoot-through. This page synthesizes distributor pricing, drop-in alternatives, and practical design guidance distilled from the TI datasheet and third-party reference designs - information not available on a single distributor product page.
LMG3105R017 - 100V 1.7mΩ GaN FET Power Stage | Texas Instruments
The Texas Instruments LMG3105R017 is a 100V, 1.7mΩ Gallium Nitride (GaN) FET power stage with an enhanced integrated gate driver, protection features, and smart-switching capability, packaged in a 6.5mm × 4mm lead-free VQFN-FCRLF surface-mount module. It delivers up to 126A pulsed current, integrates a high-frequency GaN driver optimized for the GaN FET, and removes bond-wire inductance for cleaner high-frequency switching in hard-switched or soft-switched topologies. What is a GaN power stage? A GaN power stage is a power-management IC that co-integrates a gallium-nitride enhancement-mode transistor and its gate driver inside one package. Compared to silicon MOSFETs, GaN FETs offer lower on-resistance per die area, near-zero reverse-recovery charge, and faster switching edges. A power stage (versus a bare die) brings the driver adjacent to the FET, which minimizes the gate-loop inductance and lets the device switch at high dV/dt while remaining rugged. GaN power stages sit in the power-conversion signal chain as the final switching element in buck, boost, half-bridge, and full-bridge converters used in power management. Key features include a 1.7mΩ typical on-resistance, 100V continuous drain-source voltage (120V pulsed), 6.7ns typical propagation delay, TTL-compatible 3.3V/5V logic inputs, integrated bootstrap diode, and built-in under-voltage lockout (UVLO), over-current protection (OCP), and thermal shutdown. The integrated smart-switching feature tailors dead-time control for maximum efficiency in half-bridge and synchronous-rectifier topologies. Technically, the LMG3105R017 uses TI's GaN-on-Si process with a high-side level shifter, allowing direct PWM input from a controller. The bond-wire-free package minimizes parasitic inductance in the switching loop, enabling MHz-class switching frequencies with low EMI. The integrated gate driver is matched to the GaN FET threshold, providing tightly controlled dv/dt immunity and eliminating the need for an external gate resistor. Typical applications include 48V telecom and server point-of-load converters, industrial motor drives, solar micro-inverters, Class-D audio amplifiers, and high-frequency DC-DC brick replacements where efficiency and power density matter. The low Rds(on) of 1.7mΩ minimizes conduction loss even at high current. Design consideration: route the high-side bootstrap capacitor directly between the BST and SW pins with minimum loop area to avoid noise-induced false-triggering of the high-side driver. Place a 0.1µF X7R ceramic bypass capacitor as close as possible to the VCC pin. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
LT1248CS#PBF - PFC Controller, 300 kHz, 16-SOIC | Analog Devices
The Analog Devices LT1248CS#PBF is a fixed-frequency current-averaging Power Factor Correction (PFC) controller IC housed in a 16-pin SOIC package, optimized for universal off-line power systems operating from rectified 85 VAC to 265 VAC mains. It delivers up to 300 kHz switching frequency with an adjustable oscillator, supports a wide 11.5 V to 25 V supply range, and provides active PFC with low-distortion AC line-current shaping for SMPS front ends. A Power Factor Correction (PFC) controller is a specialized analog/mixed-signal IC that conditions the input current drawn from the AC mains so that it is in phase with the input voltage, presenting a near-unity power factor to the utility. Within the broader power-management hierarchy, PFC controllers sit between the rectifier bridge and the bulk capacitor, preceding the downstream DC-DC converter. The LT1248 uses fixed high-frequency PWM current averaging (rather than peak-current detection or zero-current switching), eliminating slope-compensation requirements and enabling smaller magnetic components with lower line-current distortion across both continuous and discontinuous conduction modes. Key features include 8.5 mA typical supply current, a 96% maximum duty cycle, an internal 11.5 V undervoltage-lockout (UVLO) threshold, and built-in protection for overcurrent and soft-start sequencing. The current-averaging loop eliminates the subharmonic instabilities that plague peak-current-mode PFC stages, and the device maintains <5% THD in well-designed 100 W to >1 kW boost converters. The 16-lead SOIC (wide-body, S16 package) footprint is the industry-standard pinout for legacy PFC controllers. Typical applications include PFC front stages for desktop PC silver-box supplies, telecom rectifiers (48 V), industrial SMPS with EN61000-3-2 compliance, and high-end audio amplifiers. The wide 300 kHz capability allows the use of small ferrite boost inductors versus legacy 50 kHz iron-powder designs, reducing overall converter size and weight. Design with the LT1248 by ensuring Vsense feedback compensation is tuned for the chosen inductor and output voltage. The Vc-to-Imo gain sets the current-loop crossover; design for a crossover of roughly one-tenth of the switching frequency to avoid line-frequency harmonic distortion. Use a 1 nF to 10 nF soft-start capacitor to limit inrush. This page synthesizes verified distributor pricing, datasheet-derived parametric values, drop-in pin-compatible alternates, and design notes beyond the manufacturer datasheet, helping power engineers evaluate, source, and lay out an LT1248-based PFC stage.
LT1248IS#PBF - PFC Controller, 300kHz Average Current, 16-SOIC | Analog Devices
The Analog Devices (formerly Linear Technology) LT1248IS#PBF is an active power factor correction (PFC) controller IC that uses fixed high-frequency PWM current averaging and operates at up to 300 kHz switching frequency, housed in a 16-pin SOIC narrow-body package. Headline parameters include a 15.5 V to 27 V supply range, 250 µA typical startup current, and an internal 11.5 V lockout threshold for safe bootstrap supply design in offline converters. A PFC (Power Factor Correction) controller is a power management IC that shapes the input current of an AC-DC power supply so that it is in phase with and proportional to the AC line voltage, forcing the load presented to the utility to look resistive. Active PFC controllers such as the LT1248 are part of the broader AC-DC controller family, which also includes PWM controllers and current-mode controllers; together they form a key segment of the power management IC market. Active PFC has largely displaced passive PFC in switched-mode power supplies above ~75 W because it achieves near-unity power factor with smaller magnetics. Key features include average-current-mode control (which eliminates the slope-compensation burden imposed by peak-current controllers), instantaneous overvoltage protection, high power factor across a wide load range, and a minimum/maximum frequency clamp architecture. The 300 kHz capability permits smaller boost inductors and EMI filters compared to legacy 100 kHz PFC designs. The part is intended for universal off-line input (85 VAC to 265 VAC) and supports both continuous-conduction-mode (CCM) and discontinuous-conduction-mode (DCM) operation without topology change. Typical applications include 100 W to >1 kW AC-DC switched-mode power supplies that must comply with EN61000-3-2 harmonic-current limits, industrial SMPS for motor drives, telecom rectifier front ends, server and workstation power supplies, and high-end audio amplifiers with PFC front ends. The wide bandwidth of the current loop simplifies magnetics design and yields a smaller inductor than competitive peak-current or zero-current-switching approaches. When designing with this device, ensure the VCC bypass capacitor and the current-sense filter network follow the values given in the typical application circuit; the IS pin input range and the VAUX bootstrap supply must be sized so that VCC never collapses below the 11.5 V UVLO threshold during line dropouts. A 1% tolerance multiplier resistor on the MULT pin is recommended to keep THD within regulatory limits across line and load. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, providing engineering context beyond the bare part number. Engineers can use this document to evaluate pin-compatible replacements, estimate junction temperature under CCM boost operation, and select an EMI filter that complies with EN55022 Class B given the chosen switching frequency.
LT1910ES8 - 48V High-Side N-FET Driver, 8-SO | Analog Devices
The Analog Devices LT1910ES8 is a protected high-side N-channel MOSFET gate driver in an 8-pin SOIC (S8) package with an integrated charge pump, programmable current limit, short-circuit protection, automatic restart timer, and open-collector fault flag. It operates from an 8 V to 48 V supply and tolerates load-dump transients up to 60 V, allowing the use of low-cost N-channel MOSFETs in high-side switching topologies. The internal charge pump delivers the gate voltage needed to fully enhance the external N-FET without external components. A high-side gate driver is a semiconductor circuit that level-shifts a low-side logic control signal to drive the gate of an N-channel MOSFET placed on the high side of a load, between the supply rail and the load. The category hierarchy is gate driver -> power management IC -> semiconductor. By using an N-channel MOSFET on the high side, designers achieve lower R_DS(on) and lower cost than an equivalent P-channel MOSFET. The LT1910ES8 belongs to this gate-driver product family, with the broader function of switching and protecting DC loads in automotive, industrial, and telecom systems. Key features include an on-chip drain-current comparator that turns off the switch if load current exceeds a preset threshold, programmable delay and autorestart timing set by an external RC network, and a FAULT pin that asserts when the part enters protection. The internal charge pump maintains V_GS above the MOSFET threshold even at 100% duty cycle. Supply current is typically under 4 mA in normal switching and falls to a low microamp level in fault/shutdown. The architecture combines a 48 V-rated DMOS charge-pump switcher, a precision sense comparator, and timing logic in a monolithic die. The integrated design eliminates the external boost capacitor and gate-drive resistor network that discrete high-side drivers require, simplifying PCB layout and reducing BOM cost by typically 4-6 components. Typical applications include automotive load switching (lamps, solenoids, motors), industrial 24 V-48 V control, hot-swap / inrush limiting on plug-in cards, and battery protection in UPS and telecom -48 V systems. The device is especially suited to 12 V and 24 V automotive environments where inductive load transients and reverse-battery events are routine. When designing with this part, place the SENSE resistor between SENSE and VIN using a low-inductance layout, and keep the RG/RT timing network close to the TIMER pin. The FAULT output is open-collector and requires a pull-up resistor to logic supply. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes for the LT1910ES8 that are not found in the standalone manufacturer datasheet.
LT3469ETS8#TRPBF - 33V Piezo Driver with Boost Regulator
The Analog Devices LT3469ETS8#TRPBF is a transconductance amplifier with an integrated boost regulator, designed to drive piezo speakers and microactuators from a 5 V or 12 V supply while producing output voltages up to 33 V. It supports capacitive loads from 5 nF to 300 nF and is packaged in an eight-pin TSOT-23 surface-mount package. A transconductance amplifier is an amplifier category that converts an input voltage into an output current. In the LT3469, this characteristic is used to drive capacitive piezoelectric loads, where controlled current determines actuator voltage, stress, motion, and mechanical force. The integrated boost regulator supplies the higher voltage required by the output stage, simplifying systems that otherwise need a separate high-voltage supply. The main feature is its 33 V output capability, which provides useful drive range for piezo elements operated above low-voltage logic rails. The device is specified for a maximum input voltage of 16 V and a maximum output current of 40 mA. Its switching-regulator architecture allows the amplifier to develop a boosted output while the transconductance stage controls the piezo load. Because the output slew rate is limited by the maximum output current, load capacitance and required settling time directly influence actuator behavior. Typical applications include piezo speakers, ultrasonic transducers, haptic actuators, microactuators, and compact electromechanical systems. The part is useful when the actuator requires substantially more voltage than the available system rail. Designers should account for capacitor selection, boost-regulator layout, output-current limits, and the high-voltage behavior of the selected piezo element. PCB layout is critical because the SW node has sharp voltage edges and can couple into input and control traces. The Analog Devices datasheet recommends minimizing SW-node copper area, surrounding it with VCC-connected metal on three sides, shielding +IN and -IN, and using a ground plane beneath the switching regulator. Verify the actuator voltage, current, and power requirements before finalizing the external network. This page consolidates verified manufacturer information, distributor availability, package details, and engineering guidance for engineers evaluating the LT3469ETS8#TRPBF as a compact piezo-driver solution.
LT4276AHUFD#TRPBF - 90W LTPoE++ PD Controller, QFN-28 | ADI
The Analog Devices LT4276AHUFD#TRPBF is an LTPoE++/PoE+/PoE powered-device (PD) controller with an integrated isolated switching regulator controller, housed in a 28-pin QFN (4mm x 5mm) package. It supports the LTPoE++ classification scheme, enabling delivery of 38.7W, 52.7W, 70W or 90W at the PD RJ45 connector, and is backwards compatible with IEEE 802.3af (13W) and 802.3at (25.5W) PD signatures. Operating from a maximum input voltage of 60V over -40C to +125C, the LT4276A variant is the high-power member of the pin-compatible LT4276 family. A Power over Ethernet (PoE) PD controller is a device that negotiates power classification with a Power Sourcing Equipment (PSE) endpoint over an Ethernet cable, then enables a downstream DC-DC converter to deliver isolated, regulated power to the load. Within the system hierarchy, the LT4276 sits between the RJ45 magnetics and the isolated switching regulator - functionally a PoE interface IC plus SMPS controller in one. It belongs to the power-management IC category, and supports both forward and synchronous flyback topologies with auxiliary-power input for redundant supplies. Key features include on-chip signature resistor, programmable class timing for LTPoE++ detection, an integrated hot-swap FET driver, synchronous MOSFET gate drivers for both primary and secondary sides, an auxiliary power input for supply ORing, and an opto-coupler interface for primary-side regulation. The device is pin-compatible across the LT4276 family, allowing board reuse for 13W/25.5W/38.7W/52.7W/70W/90W PD designs with only the firmware classification resistor changed. Architecture-wise, the LT4276 combines a 100V-rated hot-swap control path, an 8-event classification engine, and a current-mode SMPS controller with programmable slope compensation. The synchronous-rectifier driver eliminates the secondary-side diode drop, lifting efficiency by 3-6% at 90W versus diode-rectified flyback designs. Auxiliary input support enables seamless failover between PoE and a local 24-48V supply. Typical applications include 802.11ax Wi-Fi 6/6E access points, 5G small-cell radio units, PTZ security cameras, industrial PoE lighting controllers, and IEEE 802.3bt-ready fanless embedded PCs. In all these use cases the LT4276A's 90W capability removes the need for local AC adapters. A key design consideration is thermal management of the QFN-28 package at sustained 90W: the exposed pad must be soldered to at least 1 sq-in of top-layer copper and four thermal vias to an inner plane to keep junction temperature below 125C. Designers should also honor the 100V absolute-maximum transient on the input during hot-plug events. This page synthesizes current distributor pricing, drop-in alternatives across the LT4276 family and competitors, and practical thermal/layout guidance that complements the manufacturer datasheet.
LT4295IUFD - IEEE 802.3bt PoE PD Controller | Analog Devices
The Analog Devices LT4295IUFD is an IEEE 802.3af/at/bt-compliant powered device (PD) interface controller with an integrated forward/flyback switching regulator controller, housed in a 28-pin QFN (4x5 mm) package, rated for 60V operation with a 214 kHz switch/clock. A powered device interface controller is the circuitry that a PoE-powered endpoint (such as an IP camera, wireless access point, or network switch port device) uses to safely receive power over Ethernet cabling. It performs detection, classification, and inrush current limiting per the IEEE 802.3 standard, then hands off to a DC-DC converter stage that converts the 37V to 57V PoE input down to usable system rails. Within the power-management hierarchy, the LT4295 belongs to the PD controller plus switching-regulator-controller class of power over Ethernet ICs. Key differentiating features include support for IEEE 802.3bt Type 3/Type 4 power levels via the T2P output, which indicates the number of classification events received during 802.3bt mutual identification and power negotiation. The LT4295 primarily targets single-signature PD topologies, eliminating the need for a second PD controller, and may also be deployed in dual-signature applications. The device supports both forward and flyback power supply topologies, and flyback operation supports No-Opto feedback, removing the optocoupler and its associated drift and aging concerns. Technically, the LT4295 drives an external low-RDS(on) N-channel hot swap MOSFET for controlled inrush and overcurrent protection, and supports LT4320/LT4321 ideal diode bridges to extend end-to-end power delivery efficiency. Auxiliary input voltages can be accurately sensed with just a resistor divider connected to the AUX pin, enabling seamless auxiliary-power-to-PoE switchover in hybrid powered designs. Typical applications include IEEE 802.3bt PoE+ powered IP surveillance cameras, 802.11ax wireless access points, PoE LED lighting drivers, and network intercom or building automation endpoints. The wide 60V rating provides margin over the 57V PoE bus. Design consideration: because the LT4295 controls an external hot swap MOSFET, ensure the MOSFET SOA covers the bulk-capacitor inrush transient, and place the VCC decoupling capacitor close to the VCC and GND pins as the datasheet layout guidance specifies. This page synthesizes distributor pricing, drop-in alternatives, design notes, and application guidance not found together in the manufacturer datasheet.
LT4295IUFD#PBF - IEEE 802.3bt PoE PD Controller | Analog Devices
The Analog Devices LT4295IUFD#PBF is an IEEE 802.3af/at/bt-compliant Power over Ethernet (PoE) powered device (PD) interface controller with an integrated forward/flyback switching regulator controller, delivered in a 28-pin QFN (4x5 mm, UFD) package with exposed pad. It supports PoE (802.3af), PoE+ (802.3at) and 802.3bt Type 3/4 power levels up to 71.3W, operating from a 60V-rated input rail. A PoE powered-device controller is the interface circuit that performs detection, classification, and inrush-current limiting on the power delivered over the Ethernet cable, then manages the downstream isolated (or non-isolated) DC-DC conversion. In the power-management hierarchy it sits between the Ethernet magnetics/diode bridge and the point-of-load converters, combining PD interface and PWM control in a single power management IC. Key features include IEEE 802.3bt mutual identification with a T2P output that indicates the number of classification events received, single-signature PD topology support that eliminates the need for a second PD controller, and an integrated switching regulator controller supporting both forward and flyback topologies for high efficiency power conversion. Technically, the LT4295 integrates a precision detection/classification engine with a current-mode PWM controller, allowing the entire powered-device front end and primary-side conversion control to be handled by one IC. The 60V rating and rugged hot-swap style inrush control protect the PD interface from cable surge events, while programmable oscillator frequency and soft-start allow optimization of transformer size and EMI signature. Typical applications include IEEE 802.3bt Type 3/4 powered devices such as security cameras, wireless access points, IP phones, LED luminaires, and industrial network nodes. Demonstration Circuit 2476A pairs the LT4295 with the LT4321 ideal diode bridge controller as a reference design. Design consideration: pair the LT4295 with the LT4321 PoE ideal diode bridge controller to minimize bridge diode losses and improve overall PD efficiency, especially at 802.3bt power levels. This page synthesizes distributor pricing, verified drop-in alternatives, practical design notes, and application guidance not found together in the manufacturer datasheet.
LTC1923EGN - TEC Controller PWM, 2.7-5.5V | Analog Devices
The Analog Devices LTC1923EGN is a high-efficiency thermoelectric cooler (TEC) / heater pulse-width modulator controller integrating two sets of complementary output drivers in a 28-pin SSOP package with exposed pad. The part is specified for a 2.7V to 5.5V supply range, draws 2 mA quiescent current, and operates the TEC load via a full-bridge switching topology that supports both unidirectional and bidirectional current flow. The switching frequency is 225 kHz (typical), enabling small magnetics while keeping switching losses manageable for TEC currents in the 1-3 A class. A thermoelectric cooler (TEC) controller is a specialised power-management IC that drives a Peltier-effect module used for solid-state heating and cooling. TEC modules require DC current whose polarity selects heating vs cooling and whose magnitude controls thermal flux, so the controller must provide an efficient bidirectional current source. The LTC1923 family fits in the broader hierarchy: PMIC -> power management specialised -> TEC controller -> semiconductor IC. The part complements optical transceivers, DFB/DBR laser diodes, scientific CCD/CMOS sensors, and any closed-loop thermal system where sub-100 mK stability is the design target. Key features include a single-rail 2.7-5.5V supply, 2 mA supply current, integrated full-bridge drivers rated for the TEC load, support for both heating and cooling modes, and a synchronisable oscillator. The SSOP-28 footprint with thermal pad keeps PCB area small while offering a thermal path for the gate-driver dissipation. The wide supply range makes the part directly compatible with 3.3V and 5V digital rails found in laser-diode driver boards and instrumentation front-ends. The LTC1923 implements a voltage-mode PWM core with adjustable dead time, integrated bootstrap drivers for the high-side switches, and logic-level control inputs for direction and enable. By integrating the full-bridge drivers, the part removes the need for an external gate-driver IC and the dead-time management normally associated with discrete H-bridge designs, simplifying the BOM and reducing the loop-delay penalty in the thermal control loop. Typical applications include DFB laser-diode temperature stabilisation (DFB telecom modules), DWDM optical-component thermal management, scientific instrumentation thermal control (CCD/CMOS image sensors, photodetectors), medical-laser thermal regulation, and industrial Peltier-based enclosures. In each case the part replaces a discrete H-bridge plus MCU PWM solution and provides a tighter thermal loop due to its low propagation delay. When designing with this part, observe the absolute-maximum supply rating and keep the high-side bootstrap capacitors sized per datasheet guidance. Decouple VIN with a low-ESR 1 uF ceramic placed within 5 mm of the supply pin, and provide adequate copper area on the exposed pad to dissipate the full-bridge driver losses at high TEC currents. This page synthesises distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, complementing Analog Devices' official LTC1923 datasheet (1923f.pdf).
LTC4257CS8#PBF - IEEE 802.3af PoE PD Interface Controller | ADI
The Analog Devices LTC4257CS8#PBF is an IEEE 802.3af Power over Ethernet (PoE) Powered Device (PD) interface controller with an onboard 100V, 400mA power MOSFET, packaged in an 8-pin SOIC (SO-8) and rated for commercial temperature operation from 0C to +70C. A PoE PD interface controller is the circuit block that lets a powered device, such as an IP phone or wireless access point, legally draw power from an Ethernet cable under IEEE 802.3af. It sits in the power-management IC hierarchy between the PoE PSE (power sourcing equipment) in the switch and the DC-DC converters that generate the device rails, providing detection, classification, and inrush control. Key features include the complete 25k ohm detection signature resistor, a programmable classification current source, input current limit with thermal foldback, undervoltage lockout, and power good (PGOOD) signaling - all integrated in a single 8-pin package. The integrated 100V, 400mA MOSFET eliminates a discrete pass device, and PBF suffix parts are lead-free. Technically, the LTC4257 manages the full PD handshake: it presents the signature resistance during PSE detection, sources the class-dependent current during classification, and then limits input current during power-up so inrush is controlled while the downstream converter starts. Thermal foldback reduces the current limit as junction temperature rises, protecting the internal MOSFET during sustained inrush or fault events. Typical applications include IP phones, network routers and switches, Power over LAN endpoints, security cameras, and wireless access points - anywhere a PD must extract up to the 802.3af class power (13 W maximum for Class 3) from the Ethernet pair. Design consideration: verify that the external classification resistor setting matches the power class your end equipment actually requires, since underspecifying prevents the PSE from allocating enough power and overclassing wastes budget on the switch. This page synthesizes distributor pricing, verified drop-in alternatives, pinout guidance, and practical design notes not found in the manufacturer datasheet, giving engineers a complete single-page reference for the LTC4257CS8#PBF.
LTC4414EMS8 - 36V Low Loss PowerPath PFET Controller | Analog Devices
The Analog Devices LTC4414EMS8 is a 36V low-loss PowerPath controller for large P-channel MOSFETs, operating from a 3V to 36V supply in an 8-lead MSOP (MSOP-8) package. It drives an external P-channel MOSFET to create a near-ideal diode function for power switchover, ORing two power sources with minimal forward voltage drop and extremely low power consumption. A PowerPath controller is a power management IC that governs the flow of current between multiple power sources (such as a battery and an AC adapter) and a load. Unlike a simple diode-OR arrangement, which wastes power as forward-voltage drop and heat, an ideal-diode controller senses the voltage across an external MOSFET and drives the gate so the device conducts like a diode with milliohm-level resistance. This places the LTC4414 in the ideal-diode ORing controller family within the broader voltage regulator and power management IC hierarchy. Key features include the wide 3V to 36V operating range covering 12V, 24V, and automotive-style battery rails, forward voltage drop as low as 20 mV when conducting (per datasheet forward voltage characteristic), and a status (STAT) output that can drive an auxiliary P-channel switch to connect a secondary source such as an AC wall adapter. A CTL input enables control of the main MOSFET, and an internal current sink pulls CTL low when the pin is left floating, providing deterministic default behavior. Architecturally, the LTC4414 monitors the source-drain voltage of the external PFET and amplifies the gate drive to regulate a small, fixed forward voltage, emulating an ideal diode. This near-zero drop ORing extends battery life, reduces self-heating, and eliminates the need for heatsinking that Schottky diode ORing would require at comparable currents. The 20 microseconds switchover delay parameter ensures rapid source transfer during power fail events. Typical applications include high-current diode-ORing of wall adapters and batteries, low-loss power supply holdup and switchover circuits, automotive and industrial multi-source power distribution, and battery backup systems for servers and networking equipment. When designing, select a P-channel MOSFET with adequate Vgs rating for the 36V maximum input and sufficient Rds(on) so that I-squared-R losses stay within thermal limits. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
LTC4416EMS-1#TRPBF - 36V Dual PowerPath Controller | ADI
The Analog Devices LTC4416EMS-1#TRPBF is a 36V low-loss dual PowerPath controller that drives two sets of external P-channel MOSFETs to create two near-ideal diode functions for power switchover circuits, housed in a 10-pin MSOP (MS10E) package with an operating voltage range up to 36V and 35uA quiescent current per channel. A PowerPath (power-path) controller, also called an ORing controller or ideal diode controller, is a power management IC that replaces discrete power ORing diodes with MOSFET-based switches. In the system hierarchy it sits within power management ICs (PMICs), between hot-swap controllers and load switches. Because a MOSFET conducts with only milliohms of on-resistance instead of the 0.3V to 0.7V forward drop of a silicon diode, power ORing efficiency improves dramatically, self-heating drops, and brownout margin increases. Key features of the LTC4416-1 include a wide operating supply range supporting one to eight Li-Ion cells in series, very low 35uA per-channel quiescent current that is independent of load current, and fast switchover with a 30us off-time delay and 60us on-time delay. The device is designed specifically to drive both large and small QG PFETs, making it a very low loss replacement for power supply ORing diodes in high-current rails. The LTC4416-1 variant enables fast gate pull-down under fault conditions and when the other external P-channel device is selected via the enable pins, giving deterministic switchover behavior versus the standard LTC4416. Gate-drive architecture actively charges and discharges the MOSFET gates, providing controlled forward-voltage regulation and reverse-current blocking without discrete diode losses. Per the Analog Devices datasheet, the E-grade is guaranteed from 0C to 85C, with -40C to 85C performance assured by design and characterization. Typical applications include PoE (Power over Ethernet) powered-equipment power supply ORing, battery and adapter switchover in portable instruments, and redundant-supply ORing in telecom and industrial systems where extended battery life and low self-heating matter. Design consideration: size the external P-channel MOSFET so that its gate-charge is compatible with the LTC4416-1 drive capability, and verify that supply voltage never exceeds the 36V absolute maximum; input TVS protection is recommended on long cable runs such as PoE. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
LTC4446EMS8E - 100V Hi-Side/Lo-Side MOSFET Driver | ADI
The Analog Devices LTC4446EMS8E is a high-frequency, high-voltage gate driver that drives two N-channel MOSFETs in a half-bridge configuration with supply voltages up to 100V. Housed in an 8-pin MSOP-EP (Exposed Pad) package, the LTC4446EMS8E delivers 2.5A peak top-gate pull-up current, 1.2 ohm top-gate pull-down resistance, and 0.55 ohm bottom-gate pull-down resistance, with 5ns/8ns rise/fall times driving a 1nF load. A high-side/low-side gate driver is a specialized power-management IC that translates low-power PWM control signals from a controller IC into the high-current drive needed to switch the gate of a power MOSFET. It belongs to the broader category of gate drivers (a subclass of PMIC > power management IC > semiconductor). The LTC4446 family uses a bootstrap supply architecture to generate the floating high-side rail, enabling it to switch the upper MOSFET in a half-bridge up to 100V above ground. Key features include bootstrap supply voltage up to 114V, integrated adaptive shoot-through protection, undervoltage lockout (UVLO) on both VCC and bootstrap supplies, and TTL/CMOS-compatible input logic. The exposed pad on the MSOP-EP package provides a low thermal resistance path, supporting reliable operation at high switching frequencies (the Analog Devices datasheet specifies capability up to several hundred kHz). Technically, the LTC4446 uses a separate driver channel for high-side and low-side outputs with independent pull-up/pull-down structures. The internal charge pump and bootstrap diode maintain the high-side supply voltage across the switching cycle, while adaptive dead-time control prevents cross-conduction. This architecture minimizes switching losses in high-capacitance MOSFETs typical of telecom, industrial, and automotive power conversion. Typical applications include DC/DC converters with input voltages up to 100V, motor drivers, telecom power supplies, and high-current synchronous buck or boost converters where fast switching transitions minimize switching losses in high-Cgs MOSFETs. When designing with the LTC4446, ensure the bootstrap capacitor value is sized for the switching frequency and MOSFET gate charge, and that the exposed pad is soldered to a sufficient copper pour for thermal dissipation. Proper layout of the high-side switching loop minimizes voltage overshoot and EMI. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes for the LTC4446EMS8E that are not consolidated on the manufacturer product page.
LTC4446EMS8E#TRPBF - 100V High-Speed Half-Bridge Gate Driver | ADI
The Analog Devices LTC4446EMS8E#TRPBF is a high-frequency, high-voltage half-bridge gate driver that drives two N-channel MOSFETs in a DC/DC converter with supply voltages up to 100V. Packaged in an 8-pin MSOP-EP (exposed pad), it delivers 2.5A peak source current and 3A peak sink current on its top gate driver, dramatically reducing switching losses in MOSFETs with high gate capacitance. The non-inverting logic interface operates from a 7.2V to 13.5V driver supply and tolerates ground-referenced inputs down to -8V on the high-side gate return. A half-bridge gate driver is a power-management semiconductor in the MOSFET driver family, hierarchically: gate driver -> power management IC -> semiconductor. Its role is to translate low-current PWM logic signals from a controller IC into the high-current, high-voltage drive required to switch power MOSFETs in switching converters. By providing strong source/sink currents with short propagation delays, gate drivers minimize transition losses in the MOSFETs and enable higher switching frequencies, which in turn shrinks magnetics in the surrounding DC/DC converter. Key features of the LTC4446EMS8E#TRPBF include a 22ns typical propagation delay, a separate top-side and bottom-side output structure, built-in bootstrap refresh for the high-side rail, and tolerance of high-side gate-return swings up to the 100V supply rail. The exposed pad on the MSOP-EP package provides a low thermal-resistance path (~40 C/W theta_JA on a standard 4-layer board) so the driver can sustain the high di/dt switching transitions without overheating. The device also integrates adaptive shoot-through protection logic to prevent cross-conduction in the half-bridge. In a typical buck or boost converter the LTC4446 sits between the controller IC and the two power MOSFETs; its TG/BG pins drive the high-side and low-side FET gates while a single bootstrap capacitor on the BST pin powers the floating high-side rail. Compared with discrete gate-drive solutions built from logic buffers and level shifters, the integrated LTC4446 saves board area, reduces parasitic inductance in the gate loop, and improves converter efficiency by enabling cleaner switching edges. The industrial -40C to +125C operating temperature range suits automotive, telecom, and industrial power systems. Typical applications for the LTC4446 include telecom 48V point-of-load converters, industrial motor drivers, high-voltage synchronous buck regulators, and isolated DC/DC transformer drivers where a half-bridge topology is required. When designing with this part, place the bootstrap capacitor as close as possible to the BST and TG pins and use a low-ESR ceramic; route the high-side gate-return (SW) trace directly above the high-side MOSFET drain connection to minimize parasitic inductance that can cause ringing on the gate waveform.
MAX15024AATB+T - 8A Single MOSFET Gate Driver | Analog Devices
The Analog Devices MAX15024AATB+T is a high-speed single low-side MOSFET gate driver capable of sinking and sourcing 8A peak current, packaged in a 10-pin TDFN-EP (3x3 mm) with exposed pad. The device operates from a wide 4.5V to 28V supply rail and accepts TTL input logic levels, achieving a typical propagation delay of 16 ns and supporting switching frequencies up to 1 MHz with large capacitive loads. A low-side MOSFET gate driver is a power-management IC that sits between a low-power control signal (from a microcontroller, PWM controller, or logic gate) and the gate of a power MOSFET or IGBT. It provides high peak source/sink current to quickly charge and discharge the MOSFET gate capacitance, enabling fast switching transitions. Gate drivers belong to the broader category of power MOSFET drivers within power management ICs, and they are essential building blocks in switch-mode power supplies (SMPS), motor drives, Class-D amplifiers, synchronous rectifiers, and DC-DC converters where direct logic-level drive is too weak. Key features of the MAX15024 include independent source and sink output transistors, internal logic to prevent shoot-through, and a thermally enhanced exposed-pad package that dissipates switching losses efficiently. The TTL input thresholds make it compatible with 3.3V and 5V microcontrollers without level shifters, while the wide 4.5V to 28V operating range suits 5V, 12V, and 24V industrial bus rails. The driver can deliver 8A peak (typical) into the gate of large power MOSFETs, dramatically reducing switching loss and improving power-conversion efficiency at high frequencies. Internally, the MAX15024AATB+T uses a BiCMOS process to combine low-power CMOS logic with high-current bipolar output stages. The split source/sink output paths allow designers to independently tune rise and fall times by inserting series resistors between the IC outputs and the MOSFET gate, providing fine-grained control of EMI and switching loss trade-offs. The exposed thermal pad connects to the driver ground and serves as the primary heat-dissipation path, allowing the part to sustain high-frequency switching without thermal shutdown. Typical applications include synchronous rectification in isolated DC-DC converters, high-current Class-D audio amplifiers, motor-driver H-bridges, and power-ORing circuits. The MAX15024 is also widely used as an auxiliary gate driver in telecom brick converters, industrial 24V-input power modules, and digital-control systems requiring fast, high-current MOSFET switching. When designing with this part, place input and bypass capacitors close to the VDD pin and route the high-current gate-drive traces as short and wide as possible to minimize parasitic inductance. The exposed pad must be soldered to a sufficiently large copper pour (typically 1 square inch) to keep junction temperature within the -40C to +125C operating range during continuous 1 MHz switching. This page synthesizes distributor pricing, drop-in alternatives from the MAX15024 family and competitor parts, and practical design notes not found in the manufacturer datasheet, providing engineer-ready context for sourcing and selection decisions.
MAX15024AATB/V+T - 8A Single Low-Side MOSFET Driver | Analog Devices
The Analog Devices (formerly Maxim Integrated) MAX15024AATB/V+T is a single-channel, high-speed, high sink/source current low-side gate driver IC in a 10-pin TDFN (3x3 mm) exposed-pad package. The part delivers 8 A peak output current, a 16 ns typical propagation delay, and is capable of switching at frequencies up to 1 MHz with large capacitive loads such as power MOSFETs and IGBTs. A gate driver is a power-management IC that sits between a low-power control signal (from a microcontroller, FPGA, or analog controller) and the gate of a discrete power switch (typically a MOSFET or IGBT). Because microcontrollers cannot source or sink the multi-ampere currents required to charge and discharge a power MOSFET's gate quickly, the gate driver acts as a high-current buffer. Within the broader IC hierarchy, the MAX15024 belongs to the PMIC (Power Management IC) category, specifically the MOSFET/IGBT gate driver sub-family, often called power MOSFET drivers or low-side drivers. Its role is essential in any switched-power topology where switching losses, dead-time control, and dv/dt immunity matter. Key features include 4.5 V to 28 V supply range (VDD), 8 A peak sink/source current, internal source-and-sink output transistors with independent source and sink pins for rise/fall-time control, 16 ns typical propagation delay, inverting and non-inverting logic inputs, TTL/CMOS-compatible inputs, and a -40 C to +125 C automotive-grade operating temperature range (the /V suffix denotes the automotive-qualified version). The architecture uses a BiCMOS push-pull output stage with separate SOURCE and SINK pins that connect to the gate via small gate resistors, allowing the designer to tune rise and fall times independently. This dual-path topology reduces switching losses and EMI by controlling the trade-off between dv/dt, ringing, and cross-conduction. The internal logic accepts inverting or non-inverting inputs selected via a single pin, eliminating the need for an external inverter stage. Typical applications include synchronous-rectifier MOSFET driving in isolated DC-DC converters, low-side drive for buck and half-bridge topologies, motor-driver pre-drivers, Class-D audio amplifier output stages, and high-frequency switch-mode power supplies (SMPS) where fast edges minimize switching loss. When designing with this part, place the TDFN exposed pad over a continuous ground copper pour to dissipate the internal switching losses, and keep the gate-loop return path tight (gate resistor -> driver -> source -> back to ground) to limit parasitic inductance. This page synthesizes distributor pricing as of 2026-10-09, drop-in automotive-grade alternatives, package-aware comparison data, and practical PCB-layout design notes not collected in the manufacturer datasheet alone.
MAX1558HETB+ - Dual 1.2A USB Power Switch | Analog Devices
The Analog Devices MAX1558HETB+ is a dual, programmable-current, current-limited USB power switch with autoreset, providing up to 1.2A per channel in a 10-TDFN 3 mm x 3 mm package. Each channel includes current limiting and automatic fault recovery for downstream USB ports, cables, and connected loads. A USB power switch is a power-distribution interface IC placed between a system supply and a USB port. It regulates current delivered to a downstream device, isolates faults, and protects the host when a cable or load causes excessive current. The MAX1558 family is designed for compact USB power-distribution systems where limited board area, fault recovery, and controlled current behavior are important. The MAX1558HETB+ supports a 2.7V to 5.5V operating range and offers programmable current limiting. The manufacturer describes the MAX1558 and MAX1558H as dual switches with autoreset that latch the channel off when a short persists for more than 20ms, then test the output and automatically restart after the short is removed. The MAX1558H designation also indicates the temperature-grade variant described in the manufacturer documentation. Each channel is intended to deliver up to 1.2A, making the device suitable for USB power-distribution designs requiring independent two-channel protection. The 10-TDFN package is a compact no-lead surface-mount format with an exposed pad used for thermal management and PCB layout considerations. Exact continuous-current limits, current-limit accuracy, and thermal ratings should be confirmed against the manufacturer datasheet for the selected production variant. Typical applications include USB hubs, USB battery-charging ports, portable-device power rails, industrial USB controllers, and dual-rail USB distribution boards. Designers should account for the voltage drop across the switch when calculating downstream power and verify current-limit settings, startup behavior, and thermal performance under worst-case load conditions. The key design consideration is fault containment: the autoreset mechanism protects the system by removing a shorted channel after the specified delay, but the source rail must still have adequate protection for repeated fault events. Placement near the USB connectors can reduce trace resistance and improve fault-current behavior. This page summarizes verified product positioning, package information, and sourcing data, while highlighting design checks that should be completed against the manufacturer datasheet and the completed board layout.
MAX20313-MAX20316 - 6A Adjustable Current-Limit Switch WLP-12 | Analog Devices
The Analog Devices (formerly Maxim Integrated) MAX20313-MAX20316 family comprises four programmable current-limit switches that operate from +2.5V to +5.5V and deliver internal current limiting adjustable from 500 mA to 6 A. Housed in a 12-bump 1.65 mm × 1.45 mm WLP package, the family integrates a 10 mΩ (typical) N-channel MOSFET on the high-side switch path, a precision current-limit comparator, a fixed blanking timer, and an open-drain FLAG output that interrupts the host processor when a fault occurs. A current-limit switch (also known as an eFuse, hot-swap controller, or power-distribution switch) is a semiconductor device that combines a MOSFET switch with analog current monitoring and fault detection on a single die. It belongs to the broader power-management IC hierarchy: current-limit switch -> load switch -> power switch -> power management IC -> semiconductor. By replacing discrete fuses, sense resistors, and supervisor circuitry, these devices reduce BOM count, board area, and improve diagnostic accuracy in USB, charging, and industrial 24 V bus applications. Key features of the MAX20313-MAX20316 family include 500 mA to 6 A adjustable current limit, 10 mΩ typical on-resistance, reverse-current blocking, and thermal-shutdown protection. Two distinct fault responses are offered - the MAX20313 and MAX20315 operate in continuous current-limit mode (auto-retry), while the MAX20314 and MAX20316 latch off after the blanking window expires, requiring host toggling of the EN input to restart. Internally, the device uses a high-side N-channel MOSFET driven by an internal charge pump, a bandgap-referenced current-sense amplifier that compares the drop across the FET against an external resistor-set threshold, and a state machine that controls the blanking timer and latched/auto-retry behavior. The WLP-12 package achieves a thermal resistance (θJA) suitable for 6 A operation on a properly sized PCB copper pour, and the small 1.65 mm × 1.45 mm footprint enables placement near the connector it protects. Typical applications include USB Type-C VBUS current limiting and port-power switching, large-capacitance load charging (battery packs, super-cap banks), SATA and PCIe hot-plug protection, industrial 24 V bus protection, and any system rail requiring electronic circuit-breaker behavior with processor visibility. When designing with these parts, place the device as close to the input connector as possible, use a low-ESR ceramic bypass on IN, and follow the manufacturer's recommended copper-pour geometry on the GND and OUT bumps for thermal dissipation. The ILIM resistor must be a 1% tolerance part to maintain current-limit accuracy. This page synthesizes distributor pricing, same-package drop-in family variants, and practical layout guidance beyond what the manufacturer datasheet alone provides.
MAX20313EWC - 6A Adjustable Current-Limit Switch | 12-WLP | ADI
The Analog Devices / Maxim Integrated MAX20313EWC is a programmable current-limit load switch in a compact 12-bump WLP (1.65 x 1.45 mm) package with internal current limiting of 500 mA to 6 A, an on-resistance of 10 mOhm (typical), and reverse-current blocking plus thermal-shutdown protection. It operates from a +2.5 V to +5.5 V input rail and is designed to prevent host device damage during faulty load transients. An adjustable current-limit switch is a power-management IC that sits between a source rail and a downstream load, regulating and capping the load current during turn-on surges, hot-plug events, or downstream faults. The MAX20313 belongs to the current-limit switch family within the broader power-management IC hierarchy (current-limit switch -> load switch -> power-management IC -> semiconductor), making it ideal for protecting USB ports, SD card interfaces, and downstream regulators from inrush and short-circuit damage. Key features include a precise adjustable current-limit set via an external resistor, 10 mOhm (typ) on-resistance that minimizes conduction loss at high load currents, internal reverse-current blocking to prevent back-feeding when an external source is present, and thermal shutdown that disables the switch when the die overheats. The MAX20313 uses continuous current-limit mode (autoretry) during overcurrent events, automatically recovering once the fault is removed, whereas the latchoff parts (MAX20314/MAX20316) require logic reset. Typical applications include USB Type-C VBUS current limiting, SDXC card hot-swap protection, data modem card load switches, portable media player power rails, and RF power amplifier power management in cell phones. The 1.65 x 1.45 mm WLP footprint is designed for handheld devices where every square millimeter of PCB counts and high thermal dissipation is achievable through a modest copper pour on the top layer. When designing with the MAX20313, consider the WLP handling and reflow profile (the 12-bump array requires precise pick-and-place alignment), and verify the SET resistor value precisely against the desired ILIM using the RILIM table in the datasheet. Reverse current blocking makes the part tolerant of brown-out events but does not replace a true ideal-diode controller for OR-ing applications.