10AX115H2F34I2SG vs 10AX115H3F34I2LG Comparaison
Comparaison détaillée côte à côte de 10AX115H2F34I2SG par Altera et 10AX115H3F34I2LG par Intel. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Altera
10AX115H2F34I2SG - Arria 10 GX 1.15M Logic Elements FPGA | Altera | Intel
10AX115H2F34I2SG ✓ ActifComparaison des spécifications
| Paramètre | 10AX115H2F34I2SG | 10AX115H3F34I2LG |
|---|---|---|
| Marque | Altera | Intel |
| Catégorie | FPGA & CPLD | FPGA & CPLD |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $3 640,00 | $6 800,00 |
| Family | Arria 10 GX | Arria 10 GX |
| Logic Elements | 1,150,000 | — |
| Adaptive Logic Modules (ALMs) | 427,200 | — |
| Embedded Memory | 68.86 Mbit | 68,857,856 bits |
| DSP Blocks | 1,518 (variable precision, hardened FP32) | Variable-precision, floating-point capable |
| Transceiver Channels | 24 (max up to 14.1 Gbps) | — |
| PCIe Hard IP | 2x PCIe Gen3 | — |
| User I/O Banks | [DATA_NEEDED: number of user I/O banks] | — |
| Maximum User I/Os | [DATA_NEEDED: maximum user I/O count] | — |
| Process Technology | 20 nm Tri-Gate | — |
| Core Voltage (SmartVID) | 0.85 V to 0.9 V | — |
| Speed Grade | H2 | H3 |
| Temperature Grade | Industrial (I2, -40C to +100C Tj) | Industrial (-40C to +100C junction) |
| Boîtier | 1152-ball FC-FBGA (F34) | 1152-ball FCBGA |
| Type de montage | Surface Mount | — |
| Statut RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Niveau MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Logic Elements (LEs) | — | 1,150,000 |
| User I/O Count | — | 504 |
| Transceiver Count | — | 24 |
| Maximum Transceiver Data Rate | — | 17.4 Gbps |
| DSP Performance | — | Up to 1.5 TFLOP/s (FP) |
| Hardened Memory Controllers | — | DDR4/DDR3/LPDDR3 |
| Hardened PCIe | — | PCIe Gen3 x8 |
| Hardened Ethernet MAC | — | 10G/40G/100G capable |
| Core Voltage | — | 0.9 V |
| Process Node | — | 20 nm |