10AX115N1F40I1SG vs 10AX115H2F34E2SG Comparaison
Comparaison détaillée côte à côte de 10AX115N1F40I1SG par Intel et 10AX115H2F34E2SG par Intel. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | 10AX115N1F40I1SG | 10AX115H2F34E2SG |
|---|---|---|
| Marque | Intel | Intel |
| Catégorie | FPGA & CPLD | FPGA & CPLD |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $3 450,00 | $5 500,00 |
| Family | Intel Arria 10 GX | — |
| Device | 10AX115 (10AX115N1F40I1SG) | — |
| Logic Elements | 1,150,000 | — |
| Adaptive Logic Modules (ALMs) | [DATA_NEEDED: ALM count] | — |
| Embedded Memory | 68,857,856 bits (68.86 Mbit) | — |
| User I/O Count | 600 | — |
| Process Technology | TSMC 20 nm | — |
| Core Voltage | 0.9 V | — |
| Transceivers | Integrated multi-gigabit transceivers | 24 channels up to 14.1 Gbps |
| Hardened PCIe | PCIe Gen3 x8 blocks | — |
| DSP Blocks | Variable-precision hardened DSP | Hardened IEEE 754 single/double-precision floating-point |
| Boîtier | 1517-ball FC-FBGA (F40) | 1152-ball FCBGA (F34) 35x35 mm |
| Type de montage | Surface Mount (BGA) | Surface Mount (BGA) |
| Température de fonctionnement | -40C to +100C (industrial, I suffix) | — |
| Speed Grade | 1 | — |
| Statut RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Statut du cycle de vie | Active | — |
| Series | — | Arria 10 GX |
| Logic Elements (LE) | — | 1,150,000 |
| Adaptive Logic Modules (ALM) | — | 427,200 |
| Embedded Memory (M20K blocks) | — | 2,713 blocks / 68,857,600 bits |
| User I/O Pins | — | 504 |
| PCIe Hard IP | — | Gen3 x4 / Gen2 x8 |
| Hard Processor System | — | Dual-core ARM Cortex-A9 MPCore |
| 18x19 Multipliers | — | 2,150 |
| PLLs | — | Fractional, up to 24 |
| Memory Interfaces | — | DDR4 up to 1,600 Mbps, DDR3, QDRII+, RLDRAM3 |
| Speed/Operating Temperature Grade | — | -2 / 0 C to 100 C (E2 = industrial, enhanced) |
| Process Node | — | 20 nm Tri-Gate (Intel) |