10AX115N3F40E2SG vs 10AX115H2F34E2SG Comparaison
Comparaison détaillée côte à côte de 10AX115N3F40E2SG par Intel et 10AX115H2F34E2SG par Intel. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | 10AX115N3F40E2SG | 10AX115H2F34E2SG |
|---|---|---|
| Marque | Intel | Intel |
| Catégorie | FPGA & CPLD | FPGA & CPLD |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $5 450,00 | $5 500,00 |
| Family | Arria 10 GX | — |
| Logic Elements (LE) | 1,150,000 | 1,150,000 |
| Process Technology | TSMC 20 nm | — |
| Core Voltage | 0.9 V | — |
| Embedded Memory | 68,857,856 bits (approximately 68.85 Mbit) | — |
| Transceiver Count | 600 | — |
| Maximum Transceiver Data Rate | 17.4 Gbps | — |
| Hard Memory Controllers | Yes (DDR4 support) | — |
| PCIe Hard IP | PCIe Gen3 (hard IP) | Gen3 x4 / Gen2 x8 |
| DSP Blocks | Variable-precision DSP | Hardened IEEE 754 single/double-precision floating-point |
| Boîtier | 1517-ball FCBGA (F40) | 1152-ball FCBGA (F34) 35x35 mm |
| Package Code | BGA / FCBGA | — |
| Type de montage | Surface Mount | Surface Mount (BGA) |
| Statut RoHS | Compliant | Compliant |
| Operating Temperature Grade | E2 (Enhanced, -40C to +100C) | — |
| Configuration Memory Technology | SRAM-based (volatile, requires external boot flash) | — |
| Recommended Toolchain | Intel Quartus Prime | — |
| Series | — | Arria 10 GX |
| Adaptive Logic Modules (ALM) | — | 427,200 |
| Embedded Memory (M20K blocks) | — | 2,713 blocks / 68,857,600 bits |
| User I/O Pins | — | 504 |
| Transceivers | — | 24 channels up to 14.1 Gbps |
| Hard Processor System | — | Dual-core ARM Cortex-A9 MPCore |
| 18x19 Multipliers | — | 2,150 |
| PLLs | — | Fractional, up to 24 |
| Memory Interfaces | — | DDR4 up to 1,600 Mbps, DDR3, QDRII+, RLDRAM3 |
| Speed/Operating Temperature Grade | — | -2 / 0 C to 100 C (E2 = industrial, enhanced) |
| Process Node | — | 20 nm Tri-Gate (Intel) |