AFT26HW050SR3 vs AFT26HW050GSR3 Comparaison
Comparaison détaillée côte à côte de AFT26HW050SR3 par NXP Semiconductors et AFT26HW050GSR3 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
AFT26HW050GSR3 - 9W RF Power LDMOS 2.5-2.7GHz Doherty | NXP
AFT26HW050GSR3 ✓ ActifComparaison des spécifications
| Paramètre | AFT26HW050SR3 | AFT26HW050GSR3 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $47,74 | $51,20 |
| Manufacturer | NXP Semiconductors | NXP Semiconductors |
| Part Family | Airfast AFT26HW050S Series | — |
| Device Type | RF Power LDMOS Transistor (Asymmetrical Doherty) | RF Power MOSFET (LDMOS), N-Channel, Enhancement Mode |
| Transistor Polarity | N-Channel | — |
| Mode | Enhancement Mode | — |
| Frequency Range | 2496 MHz to 2690 MHz | — |
| Output Power (Average) | 9 W (Average) | — |
| Output Power (Peak) | 50 W (Peak) | — |
| Power Gain (Typical) | 14.2 dB | — |
| Drain Voltage (Operating) | 28 V | — |
| Quiescent Current (Test) | 100 mA | — |
| Boîtier / Format | NI-780-4S4 (Ceramic Air-Cavity) | NI-780GS-4L4L (9-pin, ceramic) |
| Topologie | Asymmetrical Doherty (Main + Peak) | — |
| Application Band | 2.6 GHz TDD-LTE / 5G NR | — |
| Statut RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Type de montage | Surface Mount (SMD RF Flange) | Chassis Mount (bolt-down, flange) |
| Series | Airfast RF Power | — |
| Part Number | — | AFT26HW050GSR3 |
| Family | — | Airfast RF Power |
| Operating Frequency | — | 2496 MHz to 2690 MHz |
| Typical Drain-Source Voltage (Vds) | — | 28 V |
| Maximum Drain-Source Voltage | — | 65 V |
| Output Power (P1dB / Avg) | — | 9 W average (Doherty) |
| Power Gain (Gp) | — | 14.2 dB at 2.69 GHz |
| Test Condition Gain | — | 14.2 dB @ 2.69 GHz |
| Test Condition Frequency | — | 2.496 GHz to 2.69 GHz |
| Quiescent Current (Iq) | — | 100 mA |
| Configuration | — | Single transistor, internally input-matched |
| Architecture | — | Asymmetric Doherty (paired carrier/peaking) |
| Technology | — | LDMOS (Laterally Diffused MOS), Airfast gen |
| REACH Status | — | Compliant |
| Température de fonctionnement | — | -40 C to +150 C |