BAT42-TR vs BAT43 Comparaison
Comparaison détaillée côte à côte de BAT42-TR par Vishay Intertechnology et BAT43 par STMicroelectronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | BAT42-TR | BAT43 |
|---|---|---|
| Marque | Vishay Intertechnology | STMicroelectronics |
| Catégorie | Diodes | Diodes |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,04 | $0,08 |
| Diode Type | Small Signal Schottky Diode | — |
| Repetitive Peak Reverse Voltage (VRRM) | 30 V | 30 V |
| Average Forward Current (IF(AV)) | 200 mA | — |
| Forward Voltage (VF) | [DATA_NEEDED: forward voltage at specified test current] | — |
| Reverse Current (IR) | [DATA_NEEDED: reverse current at rated VR] | — |
| Junction Capacitance (Cj) | [DATA_NEEDED: junction capacitance] | — |
| Reverse Recovery | Fast switching (low charge, Schottky) | — |
| ESD Protection | PN junction guard ring | Integrated guard ring against excessive voltage |
| Application Class | General purpose | — |
| Automotive Qualification | AEC-Q101 qualified version available on request | — |
| Boîtier | DO-204AH (DO-35), axial through-hole glass | DO-35 (glass axial, through-hole) |
| Type de montage | Through Hole | Through Hole |
| Packaging | Tape and Reel (TR suffix) | — |
| Halogen Free / RoHS | Halogen free and RoHS compliant package per cross-reference data | — |
| Température de fonctionnement | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Related Package Variant | Also available in SOD-123 (BAT42W) and MiniMELF types per datasheet | — |
| Device Type | — | Small Signal Schottky Diode |
| Forward Continuous Current (IF) | — | 200 mA at Ta = 25 C |
| Repetitive Peak Forward Current (IFRM) | — | 500 mA (tp <= 1 s, delta <= 0.5) |
| Non-Repetitive Surge Current (IFSM) | — | 4 A (tp = 10 ms) |
| Dissipation de puissance (Ptot) | — | 200 mW at Tl = 65 C |
| Technology | — | Metal-to-silicon Schottky barrier |
| Forward Voltage | — | [DATA_NEEDED: forward voltage at rated current] |
| Reverse Leakage Current | — | [DATA_NEEDED: reverse leakage current] |
| Case Style | — | Hermetically sealed glass body |
| Configuration | — | Single diode |
| Statut RoHS | — | [DATA_NEEDED: RoHS status] |