BFU520A vs BFU520XR Comparaison
Comparaison détaillée côte à côte de BFU520A par NXP Semiconductors et BFU520XR par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | BFU520A | BFU520XR |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | Transistors | Transistors |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,35 | $0,23 |
| Type de transistor | NPN silicon wideband RF transistor | — |
| Boîtier | SOT23 (TO-236-3), 3-pin plastic | SOT143R (4-pin, plastic, dual emitter) |
| Maximum Operating Frequency | up to 2 GHz | 2 GHz |
| Qualification | AEC-Q101 qualified | — |
| Polarity | NPN | NPN |
| Product Family | BFU5 family | — |
| Application Class | High speed, low noise; small signal to medium power | — |
| Type de montage | Surface Mount | Surface Mount |
| Tension collecteur-émetteur (Vceo) | [DATA_NEEDED: VCEO] | [DATA_NEEDED: VCEO] |
| Courant de collecteur (Ic) | [DATA_NEEDED: IC max] | — |
| Fréquence de transition (ft) | [DATA_NEEDED: fT] | [DATA_NEEDED: fT] |
| Noise Figure NF | [DATA_NEEDED: noise figure] | [DATA_NEEDED: NF] |
| Gain (S21/Gp) | [DATA_NEEDED: gain] | — |
| Dissipation de puissance (Ptot) | [DATA_NEEDED: Ptot] | — |
| Plage de température de fonctionnement | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature] |
| Statut RoHS | [DATA_NEEDED: RoHS status] | — |
| Technology | — | Silicon wideband RF BJT |
| Family | — | BFU5 |
| Continuous Collector Current | — | 0.05 A (50 mA) |
| Application Band | — | L Band |
| Number of Elements | — | 1 |
| Configuration | — | Single NPN, dual emitter pins |
| Typical Application | — | High speed, low noise amplification |
| Total Power Dissipation Ptot | — | [DATA_NEEDED: Ptot] |
| Ordering Suffix | — | XR |