BSC019N04NSGATMA1 vs BSC010N04LSATMA1 Comparaison
Comparaison détaillée côte à côte de BSC019N04NSGATMA1 par Infineon et BSC010N04LSATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | BSC019N04NSGATMA1 | BSC010N04LSATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,58 | $0,52 |
| Type de transistor | N-Channel MOSFET | — |
| Technology | OptiMOS (trench) | OptiMOS 5 |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Continuous Drain Current (ID) at TA=25C | 30 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| RDS(on) max at VGS=10V | 2.5 mΩ | — |
| RDS(on) typ at VGS=10V | 1.9 mΩ | — |
| Gate-Source Threshold (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (PD) at TA=25C | 2.5 W | — |
| Power Dissipation (PD) at TC=25C | 125 W | — |
| Plage de température de fonctionnement | -55C to +150C | -55C to +150C |
| Boîtier | PG-TDSON-8-1 (TDSON-8 FL) | PG-TDSON-8 FL (SuperSO8 5x6) |
| Type de montage | Surface Mount | Surface Mount |
| Statut RoHS | Compliant | — |
| Transistor Polarity | — | N-Channel |
| Drain-Source Breakdown Voltage (VDS) | — | 40 V |
| Gate-Source Voltage (VGS) Max | — | +/- 20 V |
| Continuous Drain Current (ID, Tc=25C) | — | 100 A |
| Continuous Drain Current (ID, Ta=25C) | — | 38 A |
| On-Resistance RDS(on) Max @ VGS=10V | — | 1.0 mOhm |
| On-Resistance RDS(on) Test Condition | — | VGS = 10 V, ID = 50 A |
| Gate Threshold Voltage VGS(th) Typ | — | 2 V |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (Tc=25C) | — | 139 W |
| Power Dissipation (Ta=25C) | — | 2.5 W |
| Niveau MSL | — | 1 |
| RoHS / Halogen-Free | — | RoHS compliant, halogen-free |
| Avalanche Rated | — | 100% avalanche tested |
| Manufacturer | — | Infineon Technologies |