BSC050N04LSGATMA1 vs BSC028N06NSTATMA1 Comparaison
Comparaison détaillée côte à côte de BSC050N04LSGATMA1 par Infineon et BSC028N06NSTATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | BSC050N04LSGATMA1 | BSC028N06NSTATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,41 | $0,40 |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 40 V | — |
| Gate-to-Source Voltage (VGS) | ±20 V | — |
| Continuous Drain Current at 25C (ID, Ta) | 18 A | — |
| Continuous Drain Current at 25C (ID, Tc) | 85 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current IDM] | — |
| Power Dissipation at Ta (PD) | 2.5 W | — |
| Power Dissipation at Tc (PD) | 57 W | — |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) max at VGS=10V] | — |
| On-State Resistance (RDS(on)) at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Technology | OptiMOS 3 (trench MOSFET) | MOSFET N-Channel (OptiMOS 5) |
| Boîtier | PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) | PG-TDSON-8-7 (SuperSO8, 5x6 mm) |
| Type de montage | Surface Mount | Surface Mount |
| Plage de température de fonctionnement | -55C to +150C | — |
| Avalanche Energy Rated | Yes (single-pulse avalanche) | — |
| Statut RoHS | Compliant | Compliant |
| Niveau MSL | 1 | 1 |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 5 |
| Part Number Base | — | BSC028N06NS |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TA=25C | — | 24 A |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| On-Resistance RDS(on) max at VGS=10V | — | 2.8 mOhm |
| Gate Threshold Voltage VGS(th) typ | — | 2.5 V to 3.5 V |
| Total Gate Charge Qg | — | 37 nC @ VGS=10V |
| Input Capacitance Ciss | — | 3000 nC [DATA_NEEDED: confirm exact pF from datasheet] |
| Output Capacitance Coss | — | 825 pF |
| Reverse Transfer Capacitance Crss | — | 56 pF |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 100 W |
| Température de jonction en fonctionnement | — | -55C to +175C |
| Sans halogène | — | Yes |
| AEC-Q101 Automotive Qualified | — | [DATA_NEEDED: confirm from datasheet - this is the NS base, automotive grade may differ] |