BSZ070N08LS5ATMA1 vs BSC027N06LS5ATMA1 Comparaison
Comparaison détaillée côte à côte de BSZ070N08LS5ATMA1 par Infineon et BSC027N06LS5ATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | BSZ070N08LS5ATMA1 | BSC027N06LS5ATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,78 | $0,66 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS™ 5 (80 V logic-level) | — |
| Polarity / Channel Type | N-Channel enhancement mode | — |
| Drain-Source Voltage (VDS) max | 80 V | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Continuous Drain Current (ID) at TC | 74 A (Tc, per datasheet) | — |
| Continuous Drain Current (ID) at TA / Si | [DATA_NEEDED: TA-rated ID] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulsed] | [DATA_NEEDED: pulsed IDM] |
| On-Resistance RDS(on) max @ VGS=10 V | 7 mΩ | — |
| On-Resistance RDS(on) @ VGS=4.5 V | [DATA_NEEDED: RDS(on) at 4.5 V] | — |
| Gate Threshold Voltage VGS(th) | Logic-level (drive compatible with 4.5 V) | — |
| Total Gate Charge Qg | [DATA_NEEDED: total Qg] | — |
| Power Dissition PD max at TC | 69 W | — |
| Température de jonction en fonctionnement | -55 °C to +150 °C | — |
| Boîtier | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) Surface Mount | — |
| Type de montage | Surface Mount | Surface Mount |
| Niveau MSL | 1 (per JEDEC J-STD-020, unleaded reflow) | — |
| Statut RoHS | Compliant | Compliant |
| Avalanche Rated | Yes | — |
| Reel Quantity | 5000 per 13-inch reel (T&R) | — |
| Series | — | OptiMOS™ 5 |
| Part Status | — | Active |
| FET Type | — | N-Channel |
| Technology | — | MOSFET (Metal Oxide) |
| Drain-Source Voltage (VDS) | — | 60 V |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | Logic-level |
| Continuous Drain Current (ID) at Tc=25°C | — | 100 A |
| Continuous Drain Current (ID) at Tc=100°C | — | [DATA_NEEDED: ID at Tc=100C] |
| On-Resistance (RDS(on)) max @ VGS=10V | — | 2.7 mOhm |
| On-Resistance (RDS(on)) @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Power Dissipation (PD) at Tc=25°C | — | 83 W |
| Plage de température de fonctionnement | — | -55°C to +150°C |
| Boîtier / Format | — | PG-TDSON-8-7 (SuperSO8 5x6) |
| Nombre de broches | — | 8 |
| Gate Charge (Qg) | — | [DATA_NEEDED: total Qg] |
| Avalanche Energy Rated | — | Yes |
| MSL (Moisture Sensitivity Level) | — | MSL1 |