BSZ0901NSIATMA1 vs BSC028N06NSTATMA1 Comparaison
Comparaison détaillée côte à côte de BSZ0901NSIATMA1 par Infineon et BSC028N06NSTATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | BSZ0901NSIATMA1 | BSC028N06NSTATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,34 | $0,40 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSZ0901NSIATMA1 | — |
| Series | OptiMOS 25V | OptiMOS 5 |
| Technology | OptiMOS trench N-channel MOSFET | MOSFET N-Channel (OptiMOS 5) |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | 60 V |
| Continuous Drain Current (ID) at Ta=25C | 25 A | — |
| Continuous Drain Current (ID) at Tc=25C | 40 A | — |
| Power Dissipation (PD) at Ta=25C | 2.1 W | — |
| Power Dissipation (PD) at Tc=25C | 69 W | — |
| Boîtier | PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) | PG-TDSON-8-7 (SuperSO8, 5x6 mm) |
| Type de montage | Surface Mount | Surface Mount |
| Nombre de broches | 8 | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| On-Resistance RDS(on) max @ VGS=10V | [DATA_NEEDED: RDS(on) max @ VGS=10V] | — |
| On-Resistance RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) max @ VGS=4.5V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge Qg] | — |
| Plage de température de fonctionnement | -55 C to +150 C (typical MOSFET range) | — |
| Packaging | Tape & Reel (ATMA1 suffix = 13-inch reel) | — |
| Statut RoHS | Compliant | Compliant |
| Part Number Base | — | BSC028N06NS |
| Continuous Drain Current (ID) at TA=25C | — | 24 A |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| On-Resistance RDS(on) max at VGS=10V | — | 2.8 mOhm |
| Gate Threshold Voltage VGS(th) typ | — | 2.5 V to 3.5 V |
| Total Gate Charge Qg | — | 37 nC @ VGS=10V |
| Input Capacitance Ciss | — | 3000 nC [DATA_NEEDED: confirm exact pF from datasheet] |
| Output Capacitance Coss | — | 825 pF |
| Reverse Transfer Capacitance Crss | — | 56 pF |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 100 W |
| Température de jonction en fonctionnement | — | -55C to +175C |
| Sans halogène | — | Yes |
| Niveau MSL | — | 1 |
| AEC-Q101 Automotive Qualified | — | [DATA_NEEDED: confirm from datasheet - this is the NS base, automotive grade may differ] |