EP1K30TI144-3N vs EP1K30TI144-2 Comparaison
Comparaison détaillée côte à côte de EP1K30TI144-3N par Altera et EP1K30TI144-2 par Intel. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | EP1K30TI144-3N | EP1K30TI144-2 |
|---|---|---|
| Marque | Altera | Intel |
| Catégorie | FPGA & CPLD | FPGA & CPLD |
| Statut du cycle de vie | NRND | Obsolete |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $21,80 | $13,85 |
| Family | ACEX 1K | ACEX-1K |
| Series | EP1K30 | EP1K30 |
| Logic Elements | 1,728 | — |
| Typical Gates | 30,000 | — |
| Usable Gates | 17,500 | — |
| Embedded Memory (EAB) | 24 Kbit (6 EABs of 4 Kbit each) | — |
| Maximum User I/O Pins | 102 | — |
| Dedicated Input Pins | 6 | — |
| Total Terminals | 144 | — |
| Boîtier | TQFP-144 (0.5 mm pitch) | 144-LQFP (TQFP), 22 mm × 22 mm, 0.5 mm pitch |
| Core Supply Voltage | 2.5 V nominal (2.375 V min, 2.625 V max) | — |
| Speed Grade | -3 (fastest in EP1K30 family) | -2 (mid-tier) |
| Température de fonctionnement | -40C to +85C (Industrial) | -40 °C to +85 °C (Industrial, "I" suffix) |
| Process Technology | 0.18 um CMOS, 4 metal layers | 0.22 µm CMOS, SRAM-based |
| Configuration Modes | Passive Serial, Passive Parallel Async, Passive Parallel Sync, JTAG (IEEE 1149.1) | — |
| PLLs | 4 | — |
| Type de montage | Surface Mount (Gull-Wing) | Surface Mount |
| Thermal Resistance (theta_JA) | Approximately 35-40 C/W (PCB-dependent) | — |
| Statut RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS compliance - legacy part] |
| Logic Elements / Cells | — | 1728 |
| Total RAM Bits | — | 24576 |
| Number of Logic Array Blocks (LABs) | — | 216 |
| Equivalent Gates | — | 30,000 |
| User I/O Count | — | 102 |
| Number of I/O Banks | — | 4 |
| Supply Voltage - Core | — | 2.5 V (2.375 V min, 2.625 V max) |
| Supply Voltage - I/O | — | 2.5 V / 3.3 V / 5.0 V (multiVolt) |
| Maximum Internal Frequency | — | 200 MHz |
| Embedded Memory Type | — | Dual-port EAB (Embedded Array Block) |
| Configuration Method | — | SRAM, requires external configuration PROM (EPC) |
| Programming Interface | — | JTAG (IEEE 1149.1) / IEEE 1532 ISP |