EP2A40B724C7ES vs EP2A40B724C7 Comparaison
Comparaison détaillée côte à côte de EP2A40B724C7ES par Intel et EP2A40B724C7 par Intel. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | EP2A40B724C7ES | EP2A40B724C7 |
|---|---|---|
| Marque | Intel | Intel |
| Catégorie | FPGA & CPLD | FPGA & CPLD |
| Statut du cycle de vie | Obsolete | Obsolete |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $155,00 | $650,00 |
| Family | APEX II | APEX II |
| Logic Elements / Cells | 38,400 | 38,400 |
| System Gates | 1,500,000 (1.5M) | — |
| Maximum Operating Frequency | 562 MHz | — |
| Process Technology | 0.15 µm | 0.15 µm CMOS, up to 8 metal layers, all-layer copper |
| Core Voltage | 1.5 V | — |
| Boîtier | 724-ball FCBGA | 724-ball FCBGA (FineLine BGA), 35 mm x 35 mm |
| Type de montage | Surface Mount | Surface Mount (BGA) |
| Number of PLLs | 4 | — |
| Embedded Memory | Embedded System Blocks (ESBs) - RAM/ROM | — |
| Température de fonctionnement | [DATA_NEEDED: commercial/industrial grade temp range] | 0 °C to +85 °C (commercial) |
| Niveau MSL | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: MSL level] |
| Statut RoHS | [DATA_NEEDED: RoHS compliance] | Non-compliant (lead-bearing FCBGA) |
| Device Family Series | EP2A40 | — |
| Speed Grade | C7 | — |
| Total System Gates | — | 1,500,000 |
| Embedded RAM Bits | — | 655,360 |
| Maximum User I/O | — | 540 |
| Core Supply Voltage | — | 1.425 V to 1.575 V (typ. 1.5 V) |
| Maximum Internal Frequency | — | 562 MHz |
| PLLs | — | 4 |
| I/O Standards Supported | — | LVTTL, LVCMOS, 1.5 V/1.8 V/2.5 V/3.3 V, SSTL, HSTL, PCI, LVDS, LVPECL, PCML, HyperTransport, True-LVDS (1 Gbps) |
| Configuration Method | — | JTAG (IEEE 1149.1), Passive Serial, Passive Parallel, Active Serial via EPC configuration devices |
| MultiVolt I/O Support | — | 1.5 V, 1.8 V, 2.5 V, 3.3 V |
| DDR Memory Support | — | Yes (via ESB / I/O circuitry) |