EP4SGX530KH40C4 vs EP4SGX530KH40C2N Comparaison
Comparaison détaillée côte à côte de EP4SGX530KH40C4 par Intel et EP4SGX530KH40C2N par Intel. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Intel
EP4SGX530KH40C4 - Stratix IV GX FPGA, 531K LE, 744 I/O, 1517-BGA | Intel
EP4SGX530KH40C4 ✓ ActifIntel
EP4SGX530KH40C2N - 531K LEs Stratix IV GX FPGA, 1517-FCBGA | Intel
EP4SGX530KH40C2N ⚠ Dernier achatComparaison des spécifications
| Paramètre | EP4SGX530KH40C4 | EP4SGX530KH40C2N |
|---|---|---|
| Marque | Intel | Intel |
| Catégorie | FPGA & CPLD | FPGA & CPLD |
| Statut du cycle de vie | Actif | Dernier achat |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $815,00 | $3 700,00 |
| Series | Stratix IV GX | — |
| Logic Elements | 531,200 | 531,200 |
| Logic Array Blocks (LABs) | 21,248 | 21,248 |
| User I/O Pins | 744 | — |
| Total Embedded Memory | 28,033,024 bits (28 Mb) | — |
| Number of Transceivers | 48 (per device) | — |
| Max Transceiver Data Rate | 8.5 Gbps | — |
| Process Technology | 40 nm TSMC | 40 nm |
| Core Supply Voltage | 0.9 V | — |
| Température de fonctionnement | 0 °C to 85 °C (Commercial) | -40C to +100C (industrial) |
| Internal Reference Frequency | 800 MHz (typ, per datasheet overview) | — |
| Boîtier | 1517-BBGA / FCBGA (42.5 x 42.5 mm) | 1517-ball FCBGA (KH40) |
| Type de montage | Surface Mount (BGA) | Surface Mount (flip-chip BGA) |
| Niveau MSL | [DATA_NEEDED: MSL rating] | — |
| Statut RoHS | Compliant | Compliant |
| Configuration Memory | SRAM-based (volatile) | — |
| Family | — | Stratix IV GX |
| Embedded Memory Bits | — | 28,033,024 |
| Adaptive Logic Modules (ALMs) | — | 212,480 |
| DSP Blocks | — | 24 |
| 18x18 Multipliers | — | 1,024 |
| Maximum User I/O Pins | — | 744 |
| Transceivers | — | Up to 48 (GX) |
| Maximum Transceiver Data Rate | — | 8.5 Gbps |
| PCI Express Hard IP Blocks | — | 4 |
| Core Voltage | — | 0.9 V |