EPF10K200EBI600-2 vs EPF10K200EGC599-3 Comparaison
Comparaison détaillée côte à côte de EPF10K200EBI600-2 par Intel et EPF10K200EGC599-3 par Altera. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Intel
EPF10K200EBI600-2 - FLEX 10KE FPGA 200K Gates 9984 LEs BGA-600 | Intel
EPF10K200EBI600-2 ObsoleteAltera
EPF10K200EGC599-3 - FLEX 10KE 200K FPGA, 599-BCPGA | Altera
EPF10K200EGC599-3 ⚠ Dernier achatComparaison des spécifications
| Paramètre | EPF10K200EBI600-2 | EPF10K200EGC599-3 |
|---|---|---|
| Marque | Intel | Altera |
| Catégorie | FPGA & CPLD | FPGA & CPLD |
| Statut du cycle de vie | Obsolete | Dernier achat |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $198,00 | $39,20 |
| Family | FLEX 10KE | FLEX 10KE |
| System Gates | 200,000 | 200000 (approx.) |
| Logic Elements (LEs) | 9,984 | — |
| Logic Array Blocks (LABs) | 1,248 | — |
| Embedded RAM | 98,304 bits | — |
| Embedded Array Blocks (EABs) | 12 (typical for this density) | — |
| User I/O Pins | 470 | — |
| Supply Voltage (VCCINT) | 2.5 V | — |
| Propagation Delay | 0.4 ns (per -2 speed grade) | 0.8 ns |
| Température de fonctionnement | 0 C to 70 C (commercial) | — |
| Boîtier | BGA-600, 45 x 45 mm, 1.27 mm pitch | 599-BCPGA (62.48 x 62.48 mm) |
| Logic Family | CMOS, SRAM-based | — |
| Type de montage | Surface Mount (BGA) | Through Hole (Pin/Peg) |
| Configuration Method | JTAG / ByteBlaster (SRAM configuration) | — |
| Statut RoHS | Compliant (lead-free package) | — |
| Manufacturer | — | Altera (Intel) |
| Series | — | FLEX-10KE |
| Device Type | — | FPGA (Field Programmable Gate Array) |
| Logic Elements | — | 9984 |
| Total RAM Bits | — | 98304 |
| Maximum User I/O | — | 470 |
| Number of Terminals | — | 599 |
| Package Code | — | PGA (Ceramic Pin Grid Array) |
| Operating Temperature Grade | — | Commercial |
| Core Supply Voltage | — | 2.375 V to 2.625 V (typical 2.5 V) |
| Process Technology | — | 0.22 µm SRAM CMOS |
| Maximum Frequency | — | 166.67 MHz |
| Speed Grade | — | -3 (0.8 ns) |
| Programming Interface | — | JTAG (IEEE 1149.1) |
| Configuration Memory | — | SRAM-based (volatile) |