IAUC64N08S5L075ATMA1 vs IAUC80N04S6N036ATMA1 Comparaison
Comparaison détaillée côte à côte de IAUC64N08S5L075ATMA1 par Infineon et IAUC80N04S6N036ATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IAUC64N08S5L075ATMA1 - 80V 7.5mΩ OptiMOS 5 N-Ch MOSFET | Infineon
IAUC64N08S5L075ATMA1 ✓ Actif
Comparaison des spécifications
| Paramètre | IAUC64N08S5L075ATMA1 | IAUC80N04S6N036ATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,58 | $0,86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IAUC64N08S5L075ATMA1 | — |
| Type de transistor | N-Channel MOSFET | — |
| Technology | OptiMOS™ 5 | — |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) at TC=25°C | 64 A (TJ-limited) | — |
| On-Resistance (RDS(on)) max at VGS=10V | 7.5 mΩ | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: gate-source voltage absolute maximum] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (PD) at TC=25°C | 75 W | — |
| Température de jonction en fonctionnement | -55 °C to +175 °C | — |
| Boîtier | PG-TDSON-8-33 (5x6 mm) | PG-TDSON-8 (SuperSO8 5x6 mm) |
| Type de montage | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | — |
| RoHS Compliance | Compliant | — |
| Niveau MSL | MSL1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Nombre de broches | 8 | — |
| Part Family | — | OptiMOS-6 40 V |
| Polarity | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Gate-Source Voltage (V_GS) | — | [DATA_NEEDED: max V_GS rating] |
| Continuous Drain Current (I_D) at T_C | — | 80 A |
| Power Dissipation (P_D) at T_C | — | 50 W |
| On-Resistance R_DS(on) max at V_GS=10V | — | 3.6 mOhm |
| On-Resistance R_DS(on) max at V_GS=4.5V | — | [DATA_NEEDED: R_DS(on) at V_GS=4.5V] |
| Plage de température de fonctionnement | — | -55 C to +175 C |
| AEC-Q101 Qualification | — | Qualified (Automotive) |
| Terminal Finish | — | Tin (Sn) (e3 per JESD-609) |
| Peak Reflow Temperature | — | 260 C (per JEDEC J-STD-020) |
| Compliance - RoHS | — | Compliant |
| Compliance - REACH | — | Compliant |