IPC100N04S51R7ATMA1 vs IPC100N04S52R8ATMA1 Comparaison
Comparaison détaillée côte à côte de IPC100N04S51R7ATMA1 par Infineon et IPC100N04S52R8ATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IPC100N04S51R7ATMA1 | IPC100N04S52R8ATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,82 | $1,18 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS-5 | — |
| Type de transistor | N-Channel MOSFET, Enhancement Mode | — |
| Drain-Source Voltage VDS | 40 V | — |
| Continuous Drain Current ID | 100 A (at TC) | — |
| Pulsed Drain Current IDM | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage VGS | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) value] | — |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation PD | 115 W (at TC) | — |
| Thermal Resistance RthJC | 1.3 K/W | — |
| Température de jonction en fonctionnement | -55 °C to +175 °C | -55C to +175C |
| Boîtier | PG-TDSON-8-34 (SS08 leadless) | PG-TDSON-8-34 (TDSON-8 EP) |
| Type de montage | Surface Mount | Surface Mount |
| Niveau MSL | MSL1 (260 °C peak reflow) | 1 (260C peak reflow) |
| AEC-Q101 Qualified | Yes | — |
| Avalanche Tested | 100% tested | 100% (per Infineon standard) |
| Statut RoHS | Compliant (Green Product) | — |
| Built-in Body Diode | Yes | — |
| Polarity | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, Tc=25C) | — | 100 A |
| Continuous Drain Current (ID, Tc=100C) | — | [DATA_NEEDED: ID at Tc=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max] |
| Gate Threshold Voltage (VGS(th), typ) | — | [DATA_NEEDED: VGS(th) typical] |
| On-State Resistance RDS(on) typ @ VGS=10V | — | 2.8 mOhm |
| On-State Resistance RDS(on) max @ VGS=10V | — | [DATA_NEEDED: RDS(on) max] |
| Power Dissipation (PD, Tc=25C) | — | 75 W |
| Automotive Qualification | — | AEC-Q101 qualified |
| RoHS / Green Product | — | Yes (RoHS compliant) |