IPC70N04S5L4R2ATMA1 vs IPC100N04S52R8ATMA1 Comparaison
Comparaison détaillée côte à côte de IPC70N04S5L4R2ATMA1 par Infineon et IPC100N04S52R8ATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IPC70N04S5L4R2ATMA1 | IPC100N04S52R8ATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,78 | $1,18 |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | — |
| Drain to Source Voltage (Vdss) | 40 V | — |
| Continuous Drain Current (Id) @ Tc=25°C | 70 A | — |
| Power Dissipation (Pd) @ Tc=25°C | 50 W | — |
| R_DS(on) Max @ Vgs=10V | 4.2 mΩ (typ) | — |
| Gate Threshold (Vgs(th)) | Logic Level (4.5 V max Rds On, Min Rds On) | — |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V | — |
| Boîtier | PG-TDSON-8-34 (Surface Mount) | PG-TDSON-8-34 (TDSON-8 EP) |
| Operating Temperature (Tj) | -55°C to +175°C | — |
| Type de montage | Surface Mount | Surface Mount |
| Niveau MSL | MSL1 (up to 260°C peak reflow) | 1 (260C peak reflow) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| Avalanche Tested | 100% (60 A production test) | 100% (per Infineon standard) |
| Statut RoHS | Compliant (Green Product) | — |
| Configuration | Single with Built-in Diode | — |
| Case Connection | DRAIN | — |
| Polarity | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, Tc=25C) | — | 100 A |
| Continuous Drain Current (ID, Tc=100C) | — | [DATA_NEEDED: ID at Tc=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max] |
| Gate Threshold Voltage (VGS(th), typ) | — | [DATA_NEEDED: VGS(th) typical] |
| On-State Resistance RDS(on) typ @ VGS=10V | — | 2.8 mOhm |
| On-State Resistance RDS(on) max @ VGS=10V | — | [DATA_NEEDED: RDS(on) max] |
| Power Dissipation (PD, Tc=25C) | — | 75 W |
| Température de jonction en fonctionnement | — | -55C to +175C |
| RoHS / Green Product | — | Yes (RoHS compliant) |