IPC90N04S5L3R3ATMA1 vs IPD038N06NF2SATMA1 Comparaison
Comparaison détaillée côte à côte de IPC90N04S5L3R3ATMA1 par Infineon et IPD038N06NF2SATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IPC90N04S5L3R3ATMA1 - 40V 90A OptiMOS N-Channel MOSFET | Infineon
IPC90N04S5L3R3ATMA1 ✓ Actif
Comparaison des spécifications
| Paramètre | IPC90N04S5L3R3ATMA1 | IPD038N06NF2SATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,96 | $0,95 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 5 40V | — |
| FET Type | N-Channel, Enhancement Mode | N-Channel |
| Drain-Source Voltage (VDS) | 40 V | 60 V |
| Continuous Drain Current (ID) at TC=25°C | 90 A | 120 A |
| On-Resistance RDS(on) max at VGS=10V | 3.3 mΩ | — |
| On-Resistance RDS(on) at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate-Source Voltage (VGS) max | ±20 V | ±20 V |
| Gate Threshold Voltage VGS(th) | 1.7 V to 2.7 V (logic level) | — |
| Total Power Dissipation (TC=25°C) | 62 W | — |
| Température de jonction en fonctionnement | -55°C to +175°C | -55°C to +175°C |
| Storage Temperature Range | [DATA_NEEDED: storage temp range] | — |
| Boîtier | PG-TDSON-8-34 (TDSON-8) | PG-TO252-3 (DPAK) |
| Type de montage | Surface Mount | Surface Mount |
| MSL Moisture Sensitivity | MSL1 (per JEDEC J-STD-020) | — |
| Peak Reflow Temperature | 260°C | — |
| Qualification | AEC-Q101 automotive qualified | — |
| Avalanche Tested | 100% (production-level) | — |
| RoHS Compliance | Compliant (Green Product) | — |
| Technology | — | OptiMOS (Trench) |
| Continuous Drain Current (ID) at TA=25°C | — | 20 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | — | 3.85 mΩ max |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Typical Gate Charge (Qg) at VGS=10V | — | 68 nC |
| Input Capacitance (Ciss) | — | 6700 pF |
| Output Capacitance (Coss) | — | 670 pF |
| Reverse Transfer Capacitance (Crss) | — | 43 pF |
| Power Dissipation (PD) at TA=25°C | — | 3 W |
| Power Dissipation (PD) at TC=25°C | — | 107 W |
| Statut RoHS | — | Compliant |
| Channel Mode | — | Enhancement |