IPD090N03LGATMA1 vs IPT007N06NATMA1 Comparaison
Comparaison détaillée côte à côte de IPD090N03LGATMA1 par Infineon et IPT007N06NATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IPD090N03LGATMA1 | IPT007N06NATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,34 | $2,84 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (Vdss) | 30 V | — |
| Continuous Drain Current (Id) @ Tc=25C | 40 A | — |
| Continuous Drain Current (Id) @ Tc=100C | [DATA_NEEDED: Id at 100C] | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed Id] | — |
| Maximum Power Dissipation (Pd) @ Tc=25C | 42 W | — |
| On-State Resistance (Rds(on)) @ Vgs=10V, Id=30A | 9 mOhm (typical) | — |
| On-State Resistance (Rds(on)) @ Vgs=4.5V | [DATA_NEEDED: Rds(on) at 4.5V] | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Reverse Recovery Charge (Qrr) | [DATA_NEEDED: Qrr] | — |
| Plage de température de fonctionnement | -55C to +175C (junction) | -55 C to +175 C (TJ) |
| Boîtier | PG-TO252-3-11 (DPAK) | PG-HSOF-8-1 (TOLL) |
| Type de montage | Surface Mount | Surface Mount |
| Niveau MSL | 1 (unlimited) | MSL 1 (per JEDEC J-STD-020) |
| Statut RoHS | Compliant | Compliant |
| Technology Family | OptiMOS 30V | — |
| Configuration | Single | Single N-channel |
| Technology | — | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID, TC=25C) | — | 300 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance (RDS(on), VGS=10V max) | — | 0.75 mOhm |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max] |
| Power Dissipation (PD, TC=25C) | — | 375 W |
| Gate Charge (QG) | — | [DATA_NEEDED: total gate charge] |
| Avalanche Energy (EAS) | — | [DATA_NEEDED: single-pulse avalanche energy] |
| Thermal Resistance (RthJC max) | — | [DATA_NEEDED: RthJC] |
| Lead-Free | — | Yes |
| Sans halogène | — | Yes |
| Standard Pack Quantity | — | 3000 (Tape & Reel) |