IPD135N03LGATMA1 vs IPD060N03LGATMA1 Comparaison
Comparaison détaillée côte à côte de IPD135N03LGATMA1 par Infineon et IPD060N03LGATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IPD135N03LGATMA1 | IPD060N03LGATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,22 | $0,20 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS™ | — |
| Type de transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) | 30 A (Tc) | — |
| Power Dissipation (PD) | 31 W (Tc) | — |
| Boîtier / Format | PG-TO252-3 (DPAK), Surface Mount | PG-TO252-3 (DPAK) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at 10V VGS] | — |
| Gate Charge (Qg) | Ultra-low (per OptiMOS™ family spec) | — |
| Output Charge (Qoss) | Ultra-low (per OptiMOS™ family spec) | — |
| Plage de température de fonctionnement | -55°C to +175°C (TJ max typical for OptiMOS) | — |
| Type de montage | Surface Mount | Surface Mount |
| Niveau MSL | 1 (per JEDEC J-STD-020) | 1 (Unlimited) |
| Statut RoHS | Compliant | Compliant |
| Lead-Free Finish | Yes | — |
| Qualification | Industrial (Infineon OptiMOS™ standard grade) | — |
| Product Family | — | OptiMOS 30V |
| Polarity / Channel Type | — | N-Channel |
| Continuous Drain Current (ID, TC=25C) | — | 50 A |
| Pulsed Drain Current (IDM, TC=25C, tp<=10us) | — | 200 A |
| Gate-Source Voltage (VGS) | — | +/-20 V |
| Gate Threshold Voltage (VGS(th), typ) | — | 1.7 V |
| On-State Resistance (RDS(on), VGS=10V) | — | 6.0 mOhm (typ) / 7.5 mOhm (max) |
| On-State Resistance (RDS(on), VGS=4.5V) | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Total Gate Charge (Qg, typ) | — | 21 nC |
| Output Charge (Qoss, typ) | — | [DATA_NEEDED: Qoss] |
| Reverse Recovery Charge (Qrr) | — | [DATA_NEEDED: Qrr] |
| Power Dissipation (PD, TC=25C) | — | 56 W |
| Température de jonction en fonctionnement | — | -55C to +175C |
| Thermal Resistance Junction-to-Case (RthJC, max) | — | 2.5 C/W |
| Thermal Resistance Junction-to-Ambient (RthJA, max, std PCB) | — | 62 C/W |
| Lead-Free / Halogen-Free | — | Yes / Yes |
| Packing | — | Tape & Reel (T/R), 2500 per reel |
| AEC-Q101 / Automotive Grade | — | Not qualified |
| Technology / Generation | — | OptiMOS 30V, trench MOSFET |