IPD70R1K4P7SAUMA1 vs IPL65R070C7AUMA1 Comparaison
Comparaison détaillée côte à côte de IPD70R1K4P7SAUMA1 par Infineon et IPL65R070C7AUMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IPD70R1K4P7SAUMA1 | IPL65R070C7AUMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,52 | $1,68 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | CoolMOS P7 (700V Superjunction) | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 700 V | 650 V |
| Continuous Drain Current (ID) at Tc=25C | 4 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V, ID | 1.4 ohm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | [DATA_NEEDED: VGS(th) typical/range] |
| Total Power Dissipation (Ptot) at Tc=25C | 23 W | — |
| Température de jonction en fonctionnement | -55C to +150C | -55°C to +150°C |
| Boîtier | PG-TO252-3 (DPAK) | PG-VSON-4 (surface mount) |
| Type de montage | Surface Mount | Surface Mount |
| Nombre de broches | 3 (Gate, Drain, Source) | — |
| Technology | Superjunction (CoolMOS P7) | Superjunction N-Channel MOSFET |
| Avalanche Energy Rated | Yes (100% avalanche tested) | — |
| ESD Protection | Integrated (per datasheet) | — |
| Statut RoHS | Compliant | Compliant |
| Series | — | CoolMOS C7 |
| Continuous Drain Current (ID) at TC=25°C | — | 28 A |
| Continuous Drain Current (ID) at TC=100°C | — | [DATA_NEEDED: ID at TC=100°C] |
| On-Resistance RDS(on) max at VGS=10V | — | 70 mΩ (typical) |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Power Dissipation (PD) at TC=25°C | — | 169 W |
| Avalanche Energy (EAS) | — | 171 mJ |
| Configuration | — | Single with built-in diode |
| Channel Type | — | N-Channel |
| Lead-Free | — | Yes |
| Niveau MSL | — | [DATA_NEEDED: MSL rating] |