IPD90N06S407ATMA2 vs IPD70N10S312ATMA1 Comparaison
Comparaison détaillée côte à côte de IPD90N06S407ATMA2 par Infineon et IPD70N10S312ATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IPD90N06S407ATMA2 | IPD70N10S312ATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,84 | $0,92 |
| FET Type | N-Channel Enhancement Mode | N-Channel, Enhancement Mode |
| Drain-to-Source Voltage (V_DS) | 60 V | — |
| Continuous Drain Current (I_D at T_C) | 90 A | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | — |
| R_DS(on) Max at V_GS=10 V, I_D=90 A | 6.9 mOhm | — |
| Gate Threshold Voltage (V_GS(th)) | 4 V at 40 uA | — |
| Total Gate Charge (Q_G) at V_GS=10 V | 56 nC | — |
| Maximum Power Dissipation (P_D at T_C) | 79 W | — |
| Température de jonction en fonctionnement | -55 C to +175 C | — |
| Storage Temperature | [DATA_NEEDED: storage temperature range] | — |
| Boîtier | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK, 2 Leads + Tab) |
| Type de montage | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes (Green Product) | — |
| MSL (Moisture Sensitivity Level) | MSL1 (up to 260 C peak reflow) | — |
| Automotive Qualification | AEC-Q101 Qualified | AEC-Q101 |
| Avalanche Rating | 100% Avalanche Tested | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IPD70N10S312ATMA1 |
| Product Family | — | OptiMOS-T Power-Transistor |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID, Tc) | — | 70 A |
| Pulsed Drain Current (IDM) | — | 180 A |
| Power Dissipation (PD, Tc) | — | 125 W |
| On-State Resistance (RDS(on)) | — | 11.1 mΩ @ 70 A, 10 V VGS |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Input Capacitance (Ciss) | — | 4355 pF @ 25 V |
| Total Gate Charge (Qg) | — | 65 nC @ 10 V |
| Operating Temperature (TJ) | — | -55 °C to +175 °C |
| Niveau MSL | — | MSL1 (up to 260 °C peak reflow) |
| Avalanche Tested | — | 100 % (per datasheet) |
| RoHS Compliance | — | Green product, RoHS compliant |