IPT067N20NM6ATMA1 vs ISC0805NLSATMA1 Comparaison
Comparaison détaillée côte à côte de IPT067N20NM6ATMA1 par Infineon et ISC0805NLSATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IPT067N20NM6ATMA1 | ISC0805NLSATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $4,85 | $0,82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 | OptiMOS™ 5 |
| Type de transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 200 V | 100 V |
| Continuous Drain Current (ID) at TA=25C | 15.3 A | — |
| Continuous Drain Current (ID) at TC=25C | 137 A | — |
| Power Dissipation (PD) at TA=25C | 3.8 W | — |
| Power Dissipation (PD) at TC=25C | 300 W | — |
| Type de montage | Surface Mount | Surface Mount |
| Boîtier | PG-HSOF-8-1 (8-pin + exposed tab) | PG-TDSON-8-46 (SuperSO8 5x6) |
| Plage de température de fonctionnement | -55C to +150C (junction) | -55 °C to +150 °C |
| Technology | Trench-gate OptiMOS 6 silicon | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: max VGS rating] | — |
| On-Resistance RDS(on) typ | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Gate Charge (Qg) typ | [DATA_NEEDED: total gate charge] | — |
| Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical value] | — |
| Statut RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Niveau MSL | [DATA_NEEDED: MSL moisture sensitivity level] | — |
| Configuration | Single N-channel | — |
| Continuous Drain Current (ID) at TA=25°C | — | 13 A |
| Continuous Drain Current (ID) at TC=25°C | — | 71 A |
| Power Dissipation (PD) at TA | — | 2.5 W |
| Power Dissipation (PD) at TC | — | 74 W |
| On-Resistance RDS(on) max at VGS=10V | — | 10.7 mΩ at 4.5V VGS; [DATA_NEEDED: RDS(on) max at 10V] |
| On-Resistance RDS(on) max at VGS=4.5V | — | 10.7 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 2.3 V |
| Gate Charge Qg typ at VGS=4.5V | — | 16 nC |
| Input Capacitance Ciss | — | 2.2 nF |
| Reverse Transfer Capacitance Crss | — | 23 pF |
| Output Capacitance Coss | — | 360 pF |