IPTG025N15NM6ATMA1 vs IAUC100N04S6N028ATMA1 Comparaison
Comparaison détaillée côte à côte de IPTG025N15NM6ATMA1 par Infineon et IAUC100N04S6N028ATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IAUC100N04S6N028ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
IAUC100N04S6N028ATMA1 ✓ ActifComparaison des spécifications
| Paramètre | IPTG025N15NM6ATMA1 | IAUC100N04S6N028ATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,52 | $0,42 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | OptiMOS 6 150 V (N-channel trench) | MOSFET (Metal Oxide) |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID) at TA=25C | 26 A | — |
| Continuous Drain Current (ID) at TC=25C | 264 A (pulsed) | — |
| Power Dissipation (PD) at TA=25C | 3.8 W | — |
| Power Dissipation (PD) at TC=25C | 395 W | — |
| On-State Resistance RDS(on) typ | 2.5 mOhm at VGS=10 V | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) value] | — |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg value] | — |
| Boîtier | PG-HSOG-8-1 (TOLG) | PG-TDSON-8 (TDSON-8) |
| Type de montage | Surface Mount | Surface Mount |
| Plage de température de fonctionnement | -55 C to +175 C (typical for OptiMOS 6) | -55 °C to +175 °C |
| Statut RoHS | Compliant | Compliant |
| MSL (Moisture Sensitivity Level) | MSL1 (per JEDEC J-STD-020) | — |
| Solder Joint Reliability | Excellent - 30% smaller footprint than D2PAK | — |
| Series | — | OptiMOS 6 40V |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D) at T_C=25°C | — | 100 A |
| Pulsed Drain Current (I_DM) | — | 400 A |
| R_DS(on) max @ V_GS=10V | — | 2.8 mΩ (typical) |
| Gate Threshold Voltage (V_GS(th)) | — | 1.5 V to 2.5 V |
| Total Gate Charge (Q_g) | — | [DATA_NEEDED: Q_g in nC] |
| Power Dissipation (P_D) at T_C=25°C | — | 62 W |
| Automotive Qualified | — | Yes |