IQE036N08NM6CGATMA1 vs IQD020N10NM5CGATMA1 Comparaison
Comparaison détaillée côte à côte de IQE036N08NM6CGATMA1 par Infineon et IQD020N10NM5CGATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IQD020N10NM5CGATMA1 - 100V 2.0mΩ OptiMOS™ 5 N-MOSFET | Infineon
IQD020N10NM5CGATMA1 ✓ ActifComparaison des spécifications
| Paramètre | IQE036N08NM6CGATMA1 | IQD020N10NM5CGATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,82 | $1,28 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 6 | — |
| Type de transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (Vds) | 80 V | — |
| Gate-Source Voltage (Vgs) | [DATA_NEEDED: Vgs max] | — |
| Continuous Drain Current (Id) at Tc | 118 A | — |
| Continuous Drain Current (Id) at Ta | 16.7 A | — |
| Rds(on) max at Vgs=10V | 3.6 mOhm | — |
| Gate Threshold Voltage (Vgs(th)) | 3.5 V (max) | — |
| Power Dissipation at Tc | 125 W | — |
| Power Dissipation at Ta | 2.5 W | — |
| Plage de température de fonctionnement | -55 C to +175 C (junction, Tj) | -55°C to +175°C |
| Boîtier | PG-TTFN-9-3 (Source-Down PQFN, 3.3 x 3.3 mm) | PG-TTFN-9-U02 (PQFN 5x6 mm²) |
| Type de montage | Surface Mount | Surface Mount |
| Niveau MSL | MSL1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating from datasheet] |
| Statut RoHS | Compliant | Compliant |
| Technology | Trench MOSFET, OptiMOS 6 | OptiMOS™ 5 N-channel trench MOSFET |
| Configuration | Single N-channel, Source-Down | — |
| Drain-Source Voltage (VDS) | — | 100 V |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Continuous Drain Current (ID) at TA=25°C | — | 26 A |
| Continuous Drain Current (ID) at TC=25°C | — | [DATA_NEEDED: ID at TC=25°C from datasheet curve] |
| Pulsed Drain Current (IDM) at TC=25°C | — | 273 A |
| Static Drain-Source On-Resistance RDS(on) max | — | 2.0 mΩ (at VGS=10V) |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 333 W |
| Qualification | — | Industrial grade (Infineon OptiMOS™ 5 family) |