IQE036N08NM6CGATMA1 vs IQE013N04LM6SCATMA1 Comparaison
Comparaison détaillée côte à côte de IQE036N08NM6CGATMA1 par Infineon et IQE013N04LM6SCATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IQE013N04LM6SCATMA1 - 40V 1.35mΩ OptiMOS Source-Down MOSFET | Infineon
IQE013N04LM6SCATMA1 ✓ ActifComparaison des spécifications
| Paramètre | IQE036N08NM6CGATMA1 | IQE013N04LM6SCATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,82 | $1,02 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 6 | — |
| Type de transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (Vds) | 80 V | — |
| Gate-Source Voltage (Vgs) | [DATA_NEEDED: Vgs max] | — |
| Continuous Drain Current (Id) at Tc | 118 A | — |
| Continuous Drain Current (Id) at Ta | 16.7 A | — |
| Rds(on) max at Vgs=10V | 3.6 mOhm | — |
| Gate Threshold Voltage (Vgs(th)) | 3.5 V (max) | — |
| Power Dissipation at Tc | 125 W | — |
| Power Dissipation at Ta | 2.5 W | — |
| Plage de température de fonctionnement | -55 C to +175 C (junction, Tj) | [DATA_NEEDED: T_J min/max] |
| Boîtier | PG-TTFN-9-3 (Source-Down PQFN, 3.3 x 3.3 mm) | PG-WHSON-8-1 (3.3 mm × 3.3 mm Source-Down PQFN) with exposed pad |
| Type de montage | Surface Mount | Surface Mount |
| Niveau MSL | MSL1 (per JEDEC J-STD-020) | — |
| Statut RoHS | Compliant | Compliant |
| Technology | Trench MOSFET, OptiMOS 6 | OptiMOS (trench MOSFET) |
| Configuration | Single N-channel, Source-Down | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 40 V |
| Gate-Source Voltage (V<sub>GS</sub>) | — | ±20 V |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V | — | 1.35 mΩ |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>A</sub>=25 °C | — | 31 A |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub>=25 °C | — | [DATA_NEEDED: I_D at T_C] (per distributor listing 205 A pulsed) |
| Pulsed Drain Current (I<sub>DM</sub>) at T<sub>C</sub>=25 °C | — | 205 A |
| Power Dissipation (P<sub>D</sub>) at T<sub>A</sub>=25 °C | — | 2.5 W |
| Power Dissipation (P<sub>D</sub>) at T<sub>C</sub>=25 °C | — | 107 W |
| Total Gate Charge (Q<sub>G</sub>) @ V<sub>GS</sub>=10 V | — | 41 nC |
| Output Capacitance (C<sub>oss</sub>) @ V<sub>DS</sub>=20 V | — | 3800 pF |
| Packaging | — | Tape & Reel |
| Part Family | — | OptiMOS Source-Down, 40 V, 3.3×3.3 PQFN |