IQE036N08NM6CGSCATMA1 vs IQE036N08NM6CGATMA1 Comparaison
Comparaison détaillée côte à côte de IQE036N08NM6CGSCATMA1 par Infineon et IQE036N08NM6CGATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IQE036N08NM6CGSCATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon
IQE036N08NM6CGSCATMA1 ✓ ActifComparaison des spécifications
| Paramètre | IQE036N08NM6CGSCATMA1 | IQE036N08NM6CGATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,88 | $0,82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 6 | — |
| Part Status | Active | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) at TA | 16.7 A | — |
| Continuous Drain Current (ID) at TC | 118 A | — |
| Power Dissipation (PD) at TA | 2.5 W | — |
| Power Dissipation (PD) at TC | 125 W | — |
| Type de montage | Surface Mount | Surface Mount |
| Boîtier / Format | PG-WHTFN-9-1 (PQFN 3.3 x 3.3 mm) | — |
| Technology | Trench MOSFET (OptiMOS 6) | Trench MOSFET, OptiMOS 6 |
| Configuration | Source Down, Center Gate, Dual-Side Cooling | Single N-channel, Source-Down |
| Plage de température de fonctionnement | -55 C to +150 C (junction, per datasheet derating curves) | -55 C to +175 C (junction, Tj) |
| Packing | Tape and Reel (suffix ATMA1) | — |
| Voltage Rating | 60 V to 100 V category (80 V nominal) | — |
| Statut RoHS | Compliant | Compliant |
| Product Family | — | OptiMOS 6 |
| Type de transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (Vds) | — | 80 V |
| Gate-Source Voltage (Vgs) | — | [DATA_NEEDED: Vgs max] |
| Continuous Drain Current (Id) at Tc | — | 118 A |
| Continuous Drain Current (Id) at Ta | — | 16.7 A |
| Rds(on) max at Vgs=10V | — | 3.6 mOhm |
| Gate Threshold Voltage (Vgs(th)) | — | 3.5 V (max) |
| Power Dissipation at Tc | — | 125 W |
| Power Dissipation at Ta | — | 2.5 W |
| Boîtier | — | PG-TTFN-9-3 (Source-Down PQFN, 3.3 x 3.3 mm) |
| Niveau MSL | — | MSL1 (per JEDEC J-STD-020) |