IQEH50NE2LM7ZCGATMA1 vs IQEH54NE2LM7UCGATMA1 Comparaison
Comparaison détaillée côte à côte de IQEH50NE2LM7ZCGATMA1 par Infineon et IQEH54NE2LM7UCGATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IQEH50NE2LM7ZCGATMA1 - 25V 422A OptiMOS 7 N-Channel MOSFET | Infineon
IQEH50NE2LM7ZCGATMA1 ✓ ActifInfineon
IQEH54NE2LM7UCGATMA1 - 25V OptiMOS 7 N-Channel MOSFET | Infineon
IQEH54NE2LM7UCGATMA1 ✓ ActifComparaison des spécifications
| Paramètre | IQEH50NE2LM7ZCGATMA1 | IQEH54NE2LM7UCGATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,42 | $1,95 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 Power-Transistor | OptiMOS 7 Power-Transistor |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (Vds) Max | 25 V | — |
| Continuous Drain Current (Ta) | 54 A | — |
| Continuous Drain Current (Tc) | 422 A | — |
| Maximum On-Resistance (Rds(on)) | 0.5 mOhm | — |
| Gate Threshold Voltage (Vgs(th)) | 1.7 V | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 150 W | — |
| Maximum Junction Temperature | +175 degrees C | — |
| Plage de température de fonctionnement | -55 degrees C to +175 degrees C | -55C to +150C (typical MOSFET range) |
| Boîtier | PG-TTFN-9-3 | PG-TTFN-9-3 |
| Type de montage | Surface Mount | Surface Mount |
| Technology | OptiMOS 7 (Trench-Gate) | — |
| Statut RoHS | Compliant | Compliant |
| Qualification | Industrial grade per Infineon datasheet | — |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 25 V |
| Continuous Drain Current (ID) at Ta | — | 52 A |
| Continuous Drain Current (ID) at Tc | — | 406 A |
| Power Dissipation at Ta | — | 2.5 W |
| Power Dissipation at Tc | — | 150 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| On-Resistance (RDS(on)) at 10V VGS | — | [DATA_NEEDED: RDS(on) max in mohm at VGS=10V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical in nC] |
| Niveau MSL | — | [DATA_NEEDED: MSL rating] |