IQEH54NE2LM7UCGATMA1 vs IAUCN04S7L050HATMA1 Comparaison
Comparaison détaillée côte à côte de IQEH54NE2LM7UCGATMA1 par Infineon et IAUCN04S7L050HATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IQEH54NE2LM7UCGATMA1 - 25V OptiMOS 7 N-Channel MOSFET | Infineon
IQEH54NE2LM7UCGATMA1 ✓ ActifInfineon
IAUCN04S7L050HATMA1 - 40V Dual N-Ch OptiMOS 7, 5.04mΩ | Infineon
IAUCN04S7L050HATMA1 ✓ ActifComparaison des spécifications
| Paramètre | IQEH54NE2LM7UCGATMA1 | IAUCN04S7L050HATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,95 | $0,83 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 Power-Transistor | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 25 V | 40 V |
| Continuous Drain Current (ID) at Ta | 52 A | — |
| Continuous Drain Current (ID) at Tc | 406 A | — |
| Power Dissipation at Ta | 2.5 W | — |
| Power Dissipation at Tc | 150 W | — |
| Boîtier | PG-TTFN-9-3 | PG-TDSON-8-57 (SuperSO8 half-bridge) |
| Type de montage | Surface Mount | Surface Mount |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | [DATA_NEEDED: gate threshold voltage] |
| On-Resistance (RDS(on)) at 10V VGS | [DATA_NEEDED: RDS(on) max in mohm at VGS=10V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical in nC] | [DATA_NEEDED: total gate charge] |
| Plage de température de fonctionnement | -55C to +150C (typical MOSFET range) | — |
| Statut RoHS | Compliant | Compliant |
| Niveau MSL | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Series | — | OptiMOS™ 7 |
| Configuration | — | Dual N-Channel (Dual Drain, Half-Bridge) |
| Continuous Drain Current (ID), Tc=25°C | — | 65 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | — | 5.04 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Power Dissipation (PD) @ Tc=25°C | — | 40 W |
| Température de jonction en fonctionnement | — | -55 °C to +175 °C |
| Automotive Qualification | — | AEC-Q101 (family-level, automotive grade) |
| Technology | — | Trench MOSFET, OptiMOS™ 7 40V |