IQEH68NE2LM7UCGATMA1 vs IQEH50NE2LM7ZCGATMA1 Comparaison
Comparaison détaillée côte à côte de IQEH68NE2LM7UCGATMA1 par Infineon et IQEH50NE2LM7ZCGATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IQEH68NE2LM7UCGATMA1 - 25V OptiMOS 7 N-MOSFET, 338A | Infineon
IQEH68NE2LM7UCGATMA1 ✓ ActifInfineon
IQEH50NE2LM7ZCGATMA1 - 25V 422A OptiMOS 7 N-Channel MOSFET | Infineon
IQEH50NE2LM7ZCGATMA1 ✓ ActifComparaison des spécifications
| Paramètre | IQEH68NE2LM7UCGATMA1 | IQEH50NE2LM7ZCGATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,35 | $1,42 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | — |
| Type de transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 25 V | — |
| Continuous Drain Current (ID) @ Ta | 47 A | — |
| Pulsed Drain Current (IDM) @ Tc | 338 A | — |
| Power Dissipation (PD) @ Ta | 2.5 W | — |
| Power Dissipation (PD) @ Tc | 130 W | — |
| Gate Threshold Voltage Type | Logic-level (per OptiMOS 7 family) | — |
| On-Resistance Family | RDS(on)10 / RDS(on)45 (10V and 4.5V rated) | — |
| Maximum Junction Temperature | 175 °C | +175 degrees C |
| Plage de température de fonctionnement | -55 °C to +175 °C (typical for OptiMOS 7) | -55 degrees C to +175 degrees C |
| Boîtier | PG-TTFN-9-3 (surface mount) | PG-TTFN-9-3 |
| Type de montage | Surface Mount | Surface Mount |
| Niveau MSL | [DATA_NEEDED: MSL Level] | — |
| Statut RoHS | Compliant (per distributor listing) | Compliant |
| Technology | OptiMOS 7 trench MOSFET | OptiMOS 7 (Trench-Gate) |
| Packaging | Tape & Reel (per ATMA1 suffix) | — |
| Product Family | — | OptiMOS 7 Power-Transistor |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (Vds) Max | — | 25 V |
| Continuous Drain Current (Ta) | — | 54 A |
| Continuous Drain Current (Tc) | — | 422 A |
| Maximum On-Resistance (Rds(on)) | — | 0.5 mOhm |
| Gate Threshold Voltage (Vgs(th)) | — | 1.7 V |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 150 W |
| Qualification | — | Industrial grade per Infineon datasheet |