IRF5305PBF vs IRFR5305TRLPBF Comparaison
Comparaison détaillée côte à côte de IRF5305PBF par Infineon et IRFR5305TRLPBF par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IRF5305PBF | IRFR5305TRLPBF |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,51 | $0,38 |
| FET Type | P-Channel | — |
| Drain-to-Source Voltage (VDS) | -55 V | — |
| Continuous Drain Current (ID) at TC=25C | -31 A | — |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Maximum Power Dissition (PD) at TC=25C | 110 W | — |
| Gate-to-Source Voltage (VGS) max | ±20 V | — |
| Static Drain-to-Source On-Resistance (RDS(on)) at VGS=-10V | 60 mOhm (typical) | — |
| Static Drain-to-Source On-Resistance (RDS(on)) at VGS=-10V ID=-16A | [DATA_NEEDED: max RDS(on) at -10V] | — |
| Total Gate Charge (Qg) | 42 nC (typical) | — |
| Gate-to-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Turn-On Delay Time (td(on)) | [DATA_NEEDED: td(on)] | — |
| Turn-Off Delay Time (td(off)) | [DATA_NEEDED: td(off)] | — |
| Thermal Resistance, Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC] | — |
| Thermal Resistance, Junction-to-Ambient (RthJA) | [DATA_NEEDED: RthJA] | — |
| Température de jonction en fonctionnement | -55C to +175C | -55C to +175C |
| Boîtier | TO-220AB (through-hole, 3-pin + tab) | TO-252AA (DPAK), surface mount |
| Type de montage | Through Hole | Surface Mount |
| Lead-Free Plating (PBF suffix) | Yes (Pb-free) | — |
| Statut RoHS | Compliant | — |
| Technology | HEXFET (planar DMOS) | HEXFET fifth-generation planar MOSFET |
| Polarity / Channel Type | — | P-Channel |
| Drain-Source Voltage (VDS) | — | -55 V |
| Continuous Drain Current (ID) at Tc=25C | — | -31 A |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| RDS(on) max at VGS=-10V | — | 65 mΩ |
| RDS(on) max at VGS=-5V | — | [DATA_NEEDED: RDS(on) at VGS=-5V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) range] |
| Power Dissipation (PD) at Tc=25C | — | 110 W |
| Avalanche Rated | — | Yes (fully avalanche rated) |
| Lead-Free / RoHS | — | Yes (Pb-free, suffix "PBF") |
| Tape & Reel Orientation | — | Left orientation (TRLPBF = Tape & Reel, Left) |