IRF5305STRLPBF vs IRF5305PBF Comparaison
Comparaison détaillée côte à côte de IRF5305STRLPBF par Infineon et IRF5305PBF par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IRF5305STRLPBF | IRF5305PBF |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,92 | $0,51 |
| Polarity / Channel Type | P-Channel | — |
| Drain-Source Voltage (VDS) | -55 V | — |
| Continuous Drain Current (ID) at TC=25C | -31 A | -31 A |
| Continuous Drain Current (ID) at TA=25C | [DATA_NEEDED: ID at TA=25C] | — |
| RDS(on) max at VGS=-10V | 60 mOhm | — |
| RDS(on) max at VGS=-4.5V | [DATA_NEEDED: RDS(on) at VGS=-4.5V] | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typ] | — |
| Total Gate Charge (Qg) | 42 nC (Mouser listing) / 63 nC (Future Electronics listing) | 42 nC (typical) |
| Maximum Power Dissition at Tc | 110 W | — |
| Maximum Power Dissipation at TA | 3.8 W | — |
| Boîtier | TO-263 / D2PAK (surface mount) | TO-220AB (through-hole, 3-pin + tab) |
| Type de montage | Surface Mount | Through Hole |
| Plage de température de fonctionnement | [DATA_NEEDED: Tj max / operating range] | — |
| Technology | HEXFET (fifth generation), IR MOSFET | HEXFET (planar DMOS) |
| Packaging | Tape & Reel (TR), 800 pcs per reel | — |
| Lead-Free / RoHS | Yes (Pb-free suffix PBF) | — |
| FET Type | — | P-Channel |
| Drain-to-Source Voltage (VDS) | — | -55 V |
| Continuous Drain Current (ID) at TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Maximum Power Dissition (PD) at TC=25C | — | 110 W |
| Gate-to-Source Voltage (VGS) max | — | ±20 V |
| Static Drain-to-Source On-Resistance (RDS(on)) at VGS=-10V | — | 60 mOhm (typical) |
| Static Drain-to-Source On-Resistance (RDS(on)) at VGS=-10V ID=-16A | — | [DATA_NEEDED: max RDS(on) at -10V] |
| Gate-to-Drain Charge (Qgd) | — | [DATA_NEEDED: Qgd] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss] |
| Turn-On Delay Time (td(on)) | — | [DATA_NEEDED: td(on)] |
| Turn-Off Delay Time (td(off)) | — | [DATA_NEEDED: td(off)] |
| Thermal Resistance, Junction-to-Case (RthJC) | — | [DATA_NEEDED: RthJC] |
| Thermal Resistance, Junction-to-Ambient (RthJA) | — | [DATA_NEEDED: RthJA] |
| Température de jonction en fonctionnement | — | -55C to +175C |
| Lead-Free Plating (PBF suffix) | — | Yes (Pb-free) |
| Statut RoHS | — | Compliant |