IRFB52N15DPBF vs IRFS52N15DTRLP Comparaison
Comparaison détaillée côte à côte de IRFB52N15DPBF par Infineon et IRFS52N15DTRLP par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IRFB52N15DPBF | IRFS52N15DTRLP |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,65 | $1,62 |
| Drain-Source Voltage (V(BR)DSS) | 150 V | — |
| Continuous Drain Current (ID) at TC=25C | 51 A | — |
| Pulsed Drain Current (IDM) | 204 A | — |
| Gate Threshold Voltage (VGS(th)) | 2.0 V to 4.0 V | 2.0 V to 4.0 V (typical 3 V) |
| Static Drain-Source On-Resistance (RDS(on)) | 32 mOhm at VGS=10V | — |
| Total Gate Charge (Qg) | 60 nC (typical) | [DATA_NEEDED: total gate charge in nC] |
| Power Dissipation (PD) at TC=25C | 230 W | — |
| Power Dissipation (PD) at TA=25C | 3.8 W | — |
| Température de jonction en fonctionnement | -55 C to +175 C | — |
| Package Type | TO-220AB (through-hole) | — |
| Polarity / Channel Type | N-Channel Enhancement Mode | — |
| Technology | HEXFET (vertical DMOS, hexagonal cell) | HEXFET (Planar) |
| Type de montage | Through Hole | Surface Mount |
| Statut RoHS | Compliant | Compliant |
| Lead-Free Finish | Yes (Pb-free PBF suffix) | Yes (matte tin) |
| Qualification Standard | Industrial market (per IR/Infineon) | — |
| FET Type | — | N-Channel MOSFET |
| Drain-to-Source Voltage (Vdss) | — | 150 V |
| Continuous Drain Current (Id) @ TC = 25 C | — | 51 A (Tc) |
| Continuous Drain Current (Id) @ TC = 100 C | — | 36 A (Tc, estimated) |
| Continuous Drain Current (Id) @ TA = 25 C | — | 60 A (Ta, datasheet) |
| On-Resistance Rds(on) max @ VGS = 10 V | — | 32 mOhm |
| Gate-to-Drain Charge (Qgd) | — | [DATA_NEEDED: Qgd in nC] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss in pF] |
| Power Dissipation (Pd) @ TC = 25 C | — | 230 W (Tc) |
| Power Dissipation (Pd) @ TA = 25 C | — | 3.8 W (Ta) |
| Thermal Resistance Junction-to-Case (RthJC) | — | [DATA_NEEDED: RthJC in C/W] |
| Thermal Resistance Junction-to-Ambient (RthJA) | — | [DATA_NEEDED: RthJA in C/W] |
| Plage de température de fonctionnement | — | -55 C to +175 C (junction) |
| Boîtier | — | D2PAK (TO-263) surface mount |
| Nombre de broches | — | 3 (Gate, Drain, Source) + tab |
| Niveau MSL | — | 1 (per JEDEC J-STD-020, typical for D2PAK) |