IRLU024NPBF vs IRFR5505TRPBF Comparaison
Comparaison détaillée côte à côte de IRLU024NPBF par Infineon et IRFR5505TRPBF par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IRLU024NPBF | IRFR5505TRPBF |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,61 | $0,48 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies (formerly International Rectifier) |
| Part Number | IRLU024NPBF | — |
| FET Type | N-Channel, Logic-Level | — |
| Technology | HEXFET Power MOSFET (5th generation) | IR MOSFET (HEXFET 5th generation) |
| Drain-to-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at TC=25C | 17 A | -18 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | -72 A |
| On-Resistance RDS(on) max at VGS=10V | 65 mOhm | — |
| On-Resistance RDS(on) max at VGS=5V | [DATA_NEEDED: RDS(on) at VGS=5V] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) min/typ/max] | — |
| Total Gate Charge (Qg) | 10 nC (typical, per listing) | 21.3 nC |
| Power Dissipation (PD) at TC=25C | 45 W | — |
| Thermal Resistance Junction-to-Case (RthJC) | 3.3 C/W | 2.2 C/W |
| Thermal Resistance Junction-to-Ambient (RthJA) | 110 C/W (50 C/W PCB-mounted) | 50 C/W (typical, DPAK on 1 oz copper) |
| Température de jonction en fonctionnement | -55C to +175C | -55 C to +175 C |
| Boîtier | IPAK (TO-251AA), Through Hole | TO-252AA (DPAK), surface mount |
| Type de montage | Through Hole | Surface Mount |
| Lead-Free / RoHS | Yes (PBF suffix indicates lead-free plating) | — |
| Qualification | JEDEC standard | — |
| Gate Drive Voltage (optimized) | 10 V (capable of 4.5 V) | — |
| Series | — | HEXFET |
| Polarity | — | P-Channel |
| Drain-Source Voltage (VDS) max | — | -55 V |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| On-Resistance RDS(on) max at VGS=-10V | — | 110 mOhm |
| Gate-Source Charge (Qgs) | — | [DATA_NEEDED: Qgs] |
| Gate-Drain Charge (Qgd) | — | [DATA_NEEDED: Qgd] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss] |
| Rise Time (tr) | — | [DATA_NEEDED: tr] |
| Fall Time (tf) | — | [DATA_NEEDED: tf] |
| Maximum Power Dissipation (PD) at TC=25C | — | 57 W |
| Statut RoHS | — | Compliant (PBF suffix) |
| Lead-Free | — | Yes (PBF suffix) |