ISC025N08NM5LF2ATMA1 vs ISZ056N03LF2SATMA1 Comparaison
Comparaison détaillée côte à côte de ISC025N08NM5LF2ATMA1 par Infineon et ISZ056N03LF2SATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
ISC025N08NM5LF2ATMA1 - 80V 2.55mΩ Linear FET MOSFET | Infineon
ISC025N08NM5LF2ATMA1 ✓ ActifInfineon
ISZ056N03LF2SATMA1 - 30V 72A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ056N03LF2SATMA1 ✓ ActifComparaison des spécifications
| Paramètre | ISC025N08NM5LF2ATMA1 | ISZ056N03LF2SATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,74 | $0,49 |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide), OptiMOS 5 LF2 | — |
| Drain-Source Voltage (VDS) Max | 80 V | — |
| Continuous Drain Current (ID) @ TA=25°C | 23 A | — |
| Continuous Drain Current (ID) @ TC=25°C | 198 A | — |
| On-Resistance (RDS(on)) Max | 2.55 mΩ | — |
| Gate-Source Threshold (VGS(th)) Max | 3.9 V | — |
| Total Gate Charge (Qg) Max | 96 nC | — |
| Power Dissipation @ TA | 3 W | — |
| Power Dissipation @ TC | 217 W | — |
| Boîtier | PG-TDSON-8 FL (Surface Mount) | PG-TSDSON-8 (PQFN 3.3x3.3 mm) |
| Type de montage | Surface Mount | Surface Mount |
| Plage de température de fonctionnement | [DATA_NEEDED: operating temperature range] | -55 C to +175 C |
| Polarity | N-Channel | — |
| Statut RoHS | Compliant | Compliant |
| Ordering Code Suffix | ATMA1 (Tape & Reel, 13-inch) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | StrongIRFET 2 |
| Type de transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at Ta | — | 16 A |
| Continuous Drain Current (ID) at Tc | — | 72 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: gate-source voltage max] |
| Gate Threshold Voltage (VGS(th)) | — | 2.35 V (typ) |
| On-Resistance (RDS(on)) max at VGS=10V | — | 5.6 mOhm |
| On-Resistance (RDS(on)) max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 52 W |