ISC0805NLSATMA1 vs ISC060N10NM6ATMA1 Comparaison
Comparaison détaillée côte à côte de ISC0805NLSATMA1 par Infineon et ISC060N10NM6ATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
ISC060N10NM6ATMA1 - 100V 97A OptiMOS 6 N-Channel MOSFET | Infineon
ISC060N10NM6ATMA1 ✓ ActifComparaison des spécifications
| Paramètre | ISC0805NLSATMA1 | ISC060N10NM6ATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,82 | $1,43 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS™ 5 | — |
| Type de transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at TA=25°C | 13 A | — |
| Continuous Drain Current (ID) at TC=25°C | 71 A | — |
| Power Dissipation (PD) at TA | 2.5 W | — |
| Power Dissipation (PD) at TC | 74 W | — |
| On-Resistance RDS(on) max at VGS=10V | 10.7 mΩ at 4.5V VGS; [DATA_NEEDED: RDS(on) max at 10V] | — |
| On-Resistance RDS(on) max at VGS=4.5V | 10.7 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 2.3 V | — |
| Gate Charge Qg typ at VGS=4.5V | 16 nC | — |
| Input Capacitance Ciss | 2.2 nF | — |
| Reverse Transfer Capacitance Crss | 23 pF | — |
| Output Capacitance Coss | 360 pF | — |
| Boîtier | PG-TDSON-8-46 (SuperSO8 5x6) | PG-TDSON-8 FL (5.15 x 6.15 mm) |
| Type de montage | Surface Mount | Surface Mount |
| Plage de température de fonctionnement | -55 °C to +150 °C | -55 °C to +175 °C (TJ) |
| Statut RoHS | Compliant | Compliant |
| Series | — | OptiMOS 6 100 V |
| Continuous Drain Current (ID) at Ta | — | 15 A |
| Continuous Drain Current (ID) at Tc | — | 97 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Drain-Source On-Resistance (RDS(on)) | — | 6 mΩ at VGS = 10 V, ID = 25 A |
| Gate-Source Threshold Voltage (VGS(th)) | — | 3.3 V (typical) |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 125 W |
| Technology | — | OptiMOS 6 (thin-wafer trench) |
| Polarity | — | N-Channel |
| Niveau MSL | — | 1 (per JEDEC J-STD-020) |