ISK057N04LM6ATLA1 vs IPB021N10NM5LF2ATMA1 Comparaison
Comparaison détaillée côte à côte de ISK057N04LM6ATLA1 par Infineon et IPB021N10NM5LF2ATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IPB021N10NM5LF2ATMA1 - 100V 2.1mΩ Linear FET MOSFET | Infineon
IPB021N10NM5LF2ATMA1 ✓ ActifComparaison des spécifications
| Paramètre | ISK057N04LM6ATLA1 | IPB021N10NM5LF2ATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,52 | $2,75 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 6 | — |
| Type de transistor | N-Channel MOSFET | — |
| Technology | Trench (OptiMOS 6) | OptiMOS 5 trench-gate MOSFET (Linear FET optimized) |
| Drain-to-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at Tc | 64 A | — |
| Continuous Drain Current (ID) at Ta | [DATA_NEEDED: ID at TA=25C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| RDS(on) max at VGS=10V | [DATA_NEEDED: RDS(on) max] | — |
| RDS(on) typical at VGS=10V | 5.7 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Gate Charge (Qg total) | [DATA_NEEDED: Qg total] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Power Dissipation (PD) at Ta=25C | 2.1 W | — |
| Power Dissipation (PD) at Tc=25C | 39.1 W | — |
| Plage de température de fonctionnement | -55 °C to +150 °C | -55°C to +175°C [DATA_NEEDED: confirm from datasheet operating junction range] |
| Boîtier / Format | PG-VSON-6-1 (PQFN 2x2) | — |
| Type de montage | Surface Mount | Surface Mount |
| Statut RoHS | Compliant | Compliant |
| Niveau MSL | 1 | [DATA_NEEDED: confirm MSL rating from manufacturer datasheet] |
| Packaging | Tape & Reel (TR) | — |
| DigiKey Part Number | 448-ISK057N04LM6ATLA1TR-ND | — |
| Part Family | — | OptiMOS 5 Linear FET 2 |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 100 V |
| Continuous Drain Current (I_D) at T_C=25°C | — | 176 A |
| Continuous Drain Current (I_D) at T_A=25°C | — | 30 A |
| R_DS(on) Maximum | — | 2.1 mΩ |
| Gate-Source Voltage (V_GS) Maximum | — | ±20 V [DATA_NEEDED: absolute max rated V_GS] |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical/min] |
| Power Dissipation (P_D) at T_C=25°C | — | 375 W |
| Power Dissipation (P_D) at T_A=25°C | — | 3.8 W |
| Boîtier | — | PG-TO263-3-2 (D2PAK, surface mount, 3 pins + tab) |
| Drive Voltage (Max R_DS(on), Min R_DS(on)) | — | 10 V, 15 V |