ISZ028N03LF2SATMA1 vs IQE020N04LM6CGSCATMA1 Comparaison
Comparaison détaillée côte à côte de ISZ028N03LF2SATMA1 par Infineon et IQE020N04LM6CGSCATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
ISZ028N03LF2SATMA1 - 30V 128A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ028N03LF2SATMA1 ✓ ActifInfineon
IQE020N04LM6CGSCATMA1 - 40V OptiMOS 6 2.0mΩ N-MOSFET, PG-WHTFN-9
IQE020N04LM6CGSCATMA1 ✓ ActifComparaison des spécifications
| Paramètre | ISZ028N03LF2SATMA1 | IQE020N04LM6CGSCATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,49 | $1,65 |
| FET Type | N-Channel | — |
| Technology | StrongIRFET 2 (Trench MOSFET) | OptiMOS 6 trench |
| Drain-Source Voltage (VDS) | 30 V | 40 V |
| Continuous Drain Current (ID) at Tc | 128 A | — |
| Continuous Drain Current (ID) at Ta | 22 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate Threshold Voltage (VGS(th)) | 2.35 V | — |
| On-Resistance (RDS(on)) max | 2.8 mΩ | — |
| Power Dissipation (Tc) | 83 W | — |
| Power Dissipation (Ta) | 3 W | — |
| Boîtier | PG-TSDSON-8 FL (FL = flat lead) | PG-WHTFN-9-1 (PQFN 3.3 x 3.3 mm Source-Down dual-side cooled) |
| Type de montage | Surface Mount | Surface Mount |
| Plage de température de fonctionnement | -55C to +175C (junction, typical) | -55 °C to +150 °C (junction, per Infineon MOSFET convention) |
| Gate Drive Voltage (recommended) | 10 V (logic level at 4.5 V) | — |
| Statut RoHS | Compliant | Compliant |
| Niveau MSL | 1 | 1 (per JEDEC J-STD-020 for similar PQFN MOSFETs) |
| Avalanche Energy Rated | Yes (single-pulse) | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS 6 low-voltage power MOSFET |
| Channel Type | — | N-Channel |
| Continuous Drain Current at TA=25°C | — | 25 A |
| Continuous Drain Current at TC=25°C | — | 166 A |
| Maximum RDS(on) | — | 2.0 mΩ (per IQE part-number decode) |
| Power Dissipation at TA=25°C | — | 2.5 W |
| Power Dissipation at TC=25°C | — | 107 W |
| Nombre de broches | — | 9 |
| Lead-Free | — | Yes |