K9IUGY8J7B-CCK0 vs K9FGGY8J5A-CCK0 Comparaison
Comparaison détaillée côte à côte de K9IUGY8J7B-CCK0 par Samsung Electronics et K9FGGY8J5A-CCK0 par Samsung Electronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Samsung Electronics
K9FGGY8J5A-CCK0 - Samsung NAND Flash Memory | SSD Storage
K9FGGY8J5A-CCK0 ✓ ActifComparaison des spécifications
| Paramètre | K9IUGY8J7B-CCK0 | K9FGGY8J5A-CCK0 |
|---|---|---|
| Marque | Samsung Electronics | Samsung Electronics |
| Catégorie | EEPROM | EEPROM |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,00 | $9,95 |
| Memory Density | 1 Tb (Tera bit) | — |
| Type de mémoire | NAND Flash, 3D V-NAND TLC | NAND Flash (non-volatile) |
| Cell Type | TLC (3 bits per cell) | [DATA_NEEDED: SLC/MLC/TLC/QLC] |
| V-NAND Generation | V6 (6th generation) | — |
| Process Node / Layer Count | 4448-128L (128-layer) | — |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Type d'interface | [DATA_NEEDED: bus interface type] | — |
| Supply Voltage (VCC) | [DATA_NEEDED: VCC voltage] | [DATA_NEEDED: VCC range] |
| Supply Voltage (VCCQ) | [DATA_NEEDED: VCCQ voltage] | [DATA_NEEDED: VCCQ range] |
| Largeur du bus de données | [DATA_NEEDED: data bus width] | — |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Program/Erase Cycles | [DATA_NEEDED: P/E cycle endurance] | — |
| Température de fonctionnement | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: temperature range] |
| Package Type | [DATA_NEEDED: exact package code] | — |
| Type de montage | Surface Mount (BGA) | Surface Mount |
| Statut RoHS | [DATA_NEEDED: RoHS status] | Compliant (CCK0 suffix denotes lead-free packing per Samsung ordering-code system) |
| Product Family | — | K9-series NAND Flash |
| Density | — | [DATA_NEEDED: density] |
| Organisation de la mémoire | — | [DATA_NEEDED: organization (e.g. x8)] |
| Interface | — | [DATA_NEEDED: asynchronous/toggle/ONFI] |
| Program Time (typ) | — | [DATA_NEEDED: tPROG] |
| Erase Time (typ) | — | [DATA_NEEDED: tBERS] |
| Endurance | — | [DATA_NEEDED: P/E cycles] |
| Boîtier | — | [DATA_NEEDED: package type (FBGA)] |