M48T02-70PC1 vs M48T58-70PC1 Comparaison
Comparaison détaillée côte à côte de M48T02-70PC1 par STMicroelectronics et M48T58-70PC1 par STMicroelectronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
STMicroelectronics
M48T02-70PC1 - 5V 16Kbit TimeKeeper SRAM RTC | STMicroelectronics
M48T02-70PC1 ✓ ActifSTMicroelectronics
M48T58-70PC1 - 64Kbit Timekeeper SRAM RTC 70ns | STMicroelectronics
M48T58-70PC1 ✓ ActifComparaison des spécifications
| Paramètre | M48T02-70PC1 | M48T58-70PC1 |
|---|---|---|
| Marque | STMicroelectronics | STMicroelectronics |
| Catégorie | Memory ICs | Memory ICs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $12,40 | $10,40 |
| Type de mémoire | Non-volatile TimeKeeper SRAM (NV-SRAM + RTC) | — |
| Taille de mémoire | 16 Kbit (2 Kb x 8) | 64 Kbit (8 Kb x 8) |
| Interface | Parallel (asynchronous) | — |
| Access Time | 70 ns | 70 ns |
| Operating Voltage (VCC) | 5.0 V (4.75 V to 5.5 V) | — |
| Backup Cell | Integrated lithium coin cell (internal) | — |
| Data Retention | Minimum 10 years without VCC | — |
| Clock Functions | Sec/Min/Hr/Day/Date/Month/Year, BCD format, leap-year compensation to 2099 | — |
| Boîtier | 24-pin DIP Module (PC1), 0.600 inch / 15.24 mm row spacing | 28-pin DIP Module (CAPHAT), 0.600 inch (15.24 mm) |
| Pinout Compatibility | Pin and function compatible with JEDEC 2 Kb x 8 SRAM | — |
| Power-Fail Write Protection | Yes (internal, battery-backed) | — |
| Programmable Output | Square-wave output (selectable) | — |
| Température de fonctionnement | 0C to +70C (commercial grade) | 0C to +70C |
| Type de montage | Through-Hole (DIP Module) | Through-Hole (DIP Module) |
| Statut RoHS | [DATA_NEEDED: RoHS status - DIP Module with internal lithium cell is typically non-RoHS; confirm in datasheet] | Compliant |
| Product Type | — | Non-volatile Timekeeper SRAM with Real-Time Clock |
| Memory Organization | — | 8 K x 8 |
| Supply Voltage (VCC) | — | 4.75 V to 5.5 V |
| Type d'interface | — | Parallel |
| Clock/Calendar | — | BCD-coded year/month/day/date/hour/minute/second |
| Battery Backup | — | Integrated lithium cell |
| Data Retention (battery) | — | 10 years typical |
| Write Protection | — | Automatic power-fail write-protect |
| Frequency Test Output | — | Yes (for RTC) |
| JEDEC SRAM Compatibility | — | Pin- and function-equivalent to JEDEC 8K x 8 SRAM |